Electrical Transport and Magnetic Properties of a Possible Electron-Doped Layered Manganese Oxide
YG Zhao,YH Li,SB Ogale,M Rajeswari,V Smolyaninova,T Wu,A Biswas,L Salamanca-Riba,RL Greene,R Ramesh,T Venkatesan,JH Scott
DOI: https://doi.org/10.1103/physrevb.61.4141
2000-01-01
Abstract:We report on the structural, transport, and magnetic properties of Lao(0.67)Sr(0.33)MnO(x) thin films grown in vacuum by pulsed-laser deposition. The as-grown thin films have both the matrix La,1.34Sr0.66MnO4 phase with K2NiF4 structure and an embedded MnO phase. The electrical transport and magnetic properties of the films are determined mainly by those of the matrix phase. By annealing, the as-grown thin films can be transformed into the normal La0.67Sr0.33MnO3 Single phase, which shows the expected colossal magnetoresistance effect. Based on the composition of the matrix phase, and the structural, electrical, and magnetic properties of the films, we propose that the matrix phase is possibly electron doped with a mixed valence of Mn2+/Mn3+ instead of the Mn3+/Mn4+ as in the hole-doped case.