Abstract:Based on the excellent ferroelectric and piezoelectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystal, various functional thin film/PMN-PT heterostructures have been constructed to achieve electric-field control of physical properties. Here, we report the resistivity switching behavior of Eu0.7Sr0.3MnO3 /PMN-PT(111) multiferroic heterostructures under different in-plane reading currents, temperatures, light stimuli and electric field, and discuss the underlying coupling mechanisms of resistivity change. The transition from the electric-field induced lattice strain effect to polarization current effect can be controlled effectively by decreasing the in-plane reading current at room temperature. With the decrease of temperature, the interfacial charge effect dominates over the lattice strain effect due to the reduced charge carrier density. In addition, light stimuli can lead to the delocalization of eg carrier, and thus enhance the lattice strain effect and suppress the interfacial charge effect. This work helps to understand essential physics of magnetoelectric coupling and also provides a potential method to realize energy-efficient multi-field control of manganite thin films.

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Effects of Residual Strain on Magnetoresistance in Heterostructures of La0.9Ca0.1MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3

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Effects of electric field and light on resistivity switching for Eu0.7Sr0.3MnO3 thin films

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Investigation of magneto-electronic transport behavior in La-Ba-(Mn,Fe)-O ceramics

Effects of Ferroelectric-Poling-induced Strain on Magnetic and Transport Properties of La0.67Ba0.33MnO3 Thin Films Grown on (111)-Oriented Ferroelectric Substrates