Photoconductivity of p-Type Na-doped ZnMgO Thin Films

薛雅,叶志镇,陈凌翔,叶春丽
DOI: https://doi.org/10.3969/j.issn.1673-2812.2013.05.002
2013-01-01
Abstract:Na-doped ZnMgO thin films with excellent electrical properties were prepared on quartz substrates by pulsed laser deposition.The as-grown films were annealed in N2 atmosphere at 600℃for 60s.Photocurrents were measured under a bias of 6Vin air at room temperature when the film was irradiated by either 254nm ultraviolet beam or 630nm red laser beam for 20s.The film exhibits a higher current intensity after either 254nm ultraviolet illumination or red laser illumination.The photocurrent changes more significantly when the film is exposed to the 254nm ultraviolet beam than that of the film exposed to the red laser beam.
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