Effects of film thickness on colossal magnetoresistance in Pr0.7Sr0.3MnO3 films

G.C. Xiong,B. Zhang,S.C. Wu,Z.X. Lu,J.F. Kang,G.J. Lian,D.S. Dai
DOI: https://doi.org/10.1016/0038-1098(95)00604-4
IF: 1.934
1996-01-01
Solid State Communications
Abstract:The effect of film thickness on the colossal magnetoresistance in Pr0.7Sr0.3MnO3 films has been studied. The resistivity peak temperature shifts systematically with decreasing film thickness. A remarkable improvement of the magnetoresistance sensitivity at low field has been obtained in a 20 nm film. These effects can be understood by considering the oxygen deficiency caused by the stress at the substrate/film interface and increase of the electron delocalization in the thinner films. A way to increase the low field sensitivity at room temperature is discussed.
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