Anisotropic Magnetoresistance of Epitaxial Pr0.5Sr0.5MnO3 Film

X. G. Chen,J. B. Yang,Y. B. Yang,C. S. Wang,S. Q. Liu,Y. Zhang,J. Z. Han,Y. C. Yang
DOI: https://doi.org/10.1063/1.4862646
IF: 2.877
2014-01-01
Journal of Applied Physics
Abstract:The magnetic field and temperature dependent anisotropic magnetoresistance (AMR) of the epitaxial grown Pr0.5Sr0.5MnO3 thin films was investigated. It was found that the magnetoresistance exhibited the characteristics of magnetic polaron hopping. A two-fold symmetric AMR occurred in the ferromagnetic region (∼220 K < T < ∼150 K), while a four-fold symmetric AMR appeared under a high magnetic field in the antiferromagnetic orbital ordered region (T < ∼150 K). The angular dependence of the resistance showed a hysteresis effect under magnetic field at low temperature. It is believed that these phenomena are attributed to the spin canting effect, which originates from the melting of orbital ordering under the external magnetic field in the antiferromagnetic region.
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