Strain Driven Anisotropic Magnetoresistance in Antiferromagnetic La_0.4Sr_0.6MnO_3

A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward
DOI: https://doi.org/10.1063/1.4892420
IF: 4
2014-01-01
Applied Physics Letters
Abstract:We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1−xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.
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