Strain effect on electronic transport and ferromagnetic transition temperature in La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films

X. J. Chen,S. Soltan,H. Zhang,H.-U. Habermeier

DOI: https://doi.org/10.1103/PhysRevB.65.174402

2002-03-09

Abstract:We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates. Both the magnetization and the resistivity are critically dependent on the film thickness. $T_{c}$ is enhanced with decreasing the film thickness due to the compressive stain produced by lattice mismatch. The resistivity above 165 K of the films with various thicknesses is consistent with small polaronic hopping conductivity. The polaronic formation energy $E_{P}$ is reduced with the decrease of film thickness. We found that the strain dependence of $T_{c}$ mainly results from the strain-induced electron-phonon coupling. The strain effect on $E_{P}$ is in good agreement with the theoretical predictions.

Materials Science,Disordered Systems and Neural Networks,Strongly Correlated Electrons