Colossal Magnetoresistance Effect of Electron-Doped Manganese Oxide Thin Film La1−xTexMnO3 (X=0.1,0.15)

GT Tan,X Zhang,ZH Chen
DOI: https://doi.org/10.1063/1.1736311
IF: 2.877
2004-01-01
Journal of Applied Physics
Abstract:In this study, electron-doped manganese oxide thin films La1−xTexMnO3 (x=0.1,0.15) have been fabricated and their magnetic properties and colossal magnetoresistance effect have been investigated. The experimental results show that the thin films have a high metal–insulator transition temperature TMI of ∼300 K and a large magnetoresistance ratio of ∼80% at 4 T. In addition, the resistivity of thin films has a similar change of an on–off function near room temperature and this change might be advantageous in technological application of La1−xTexMnO3 materials.
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