Abstract:Magnetoelectric coupling permits a magnetic order parameter to be addressed electrically or vice versa, and could find use in data storage, field sensors and actuators. Coupling constants for single phase materials such as chromium dioxide, boracites and manganites are typically as low as 10^{-12} - 10^{-9} s/m, e.g. because the polarisations and magnetisations are small. Two phase multiferroics with strain mediated coupling, such as laminates, composites and epitaxial nanostructures, are more promising because each phase may be independently optimised. The resulting magnetoelectric switching can be larger, e.g. 10^{-8} s/m, but it is not sharp because clean coupling is precluded by the complexity of the microstructures and concomitant strain fields. Here we report a giant sharp magnetoelectric effect at a single epitaxial interface between a 40 nm ferromagnetic stress-sensitive La_{0.67}Sr_{0.33}MnO_3 film, and a 0.5 mm BaTiO_3 substrate that is ferroelectric, piezoelectric and ferroelastic. By applying a small electric field (4-10 kV/cm) across the entire structure, we achieve persistent changes in film magnetisation of up to 65% near the BaTiO_3 structural phase transition at around 200 K. This represents a giant magnetoelectric coupling (2.3*10-7 s/m) that arises from strain fields due to ferroelastic non-180 degree domains whose presence we confirm using x-ray diffraction. The coupling persists over a wide range of temperatures including room temperature, and could therefore inspire a range of sensor and memory applications.

Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films

The Role of Magnetoelastic Strain on Orbital Control and Transport Properties in an LaTiO3–CoFe2O4heterostructure

Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature

Large Low-Field Magnetoresistance Observed In Polycrystalline La0.7ca0.3mno3 Films

Large Low-Field Magnetoresistance Observed in Polycrystalline La 0.7 Ca 0.3 MnO 3 Films

Large room-temperature magnetoresistance in ultra-thin La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub>/Nb : SrTiO<sub>3</sub>junction

Large Room-Temperature Magnetoresistance In Ultra-Thin La0.67sr0.33mno3/Nb : Srtio3 Junction

Colossal Magnetoresistance Effect of Electron-Doped Manganese Oxide Thin Film La1−xTexMnO3 (X=0.1,0.15)

Large low-field magnetoresistance observed in heterostructure La0.7Ca0.3MnO3/Gd0.7Ca0.3MnO3 multilayers

Magnetoresistance in La2/3Ca1/3MnO3/La-2/3Sr1/3CoO3 Bilayers

Electric current-induced giant electroresistance in epitaxial La0.67Sr0.33MnO3 thin films

Giant magnetoresistance and anomalous magnetic properties of highly epitaxial ferromagnetic LaBaCo 2O 5.5+δ thin films on (001) MgO

Magnetotransport Properties in La1−xCaxMnO3 (x=0.33, 0.5) Thin Films Deposited on Different Substrates

Giant sharp magnetoelectric switching in multiferroic epitaxial La_{0.67}Sr_{0.33}MnO_3 on BaTiO_3

Cooperatively Modulating Magnetic Anisotropy and Colossal Magnetoresistance via Atomic-Scale Buffer Layers in Highly Strained La0.7Sr0.3MnO3 Films

Giant room-temperature magnetoresistance in La0.8Tb0.2MnO3 under the low magnetic fields

Enhancing Low-Field Magnetoresistance of La 0.67 Ca 0.33 MnO 3 Films Deposited on Anodized Aluminium-Oxide Membranes

Strain Relaxation And Magnetoresistance Of La0.7ca0.3mno3 Film Deposited On Mgo Substrate

Field Dependence of Magnetoresistance in Epitaxial Single-Crystal La 2/3 Ca 1/3 MnO 3-Δ Thin Film

The colossal magnetoresistance within wide temperature range in LaMnO3 compound

Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca