A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors

Pingxi Ma,Shi-Li Zhang,Mikael Östling

DOI: https://doi.org/10.1016/S0038-1101(98)00174-9

IF: 1.916

1998-01-01

Solid-State Electronics

Abstract:null

What problem does this paper attempt to address?

Analytical model of collector current density and base transit time

Pingxi Ma,Lichun Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/ICSICT.1995.503362

1995-01-01

Abstract:Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage VBE⩽1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid
Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors

Jian Cao,Yujie Bai,Jianhong Yang

DOI: https://doi.org/10.1088/1361-6641/ad4170

IF: 2.048

2024-04-24

Semiconductor Science and Technology

Abstract:The conventional theory of the BJT does not clarify the electric field and its effect on the carrier transit in the uniformly doped base region, although the electric field is considered to be a second-order effect at high-level injection. In this study, analytical models of the carrier distribution, electric field, and carrier transit time in the base region are developed without making additional assumptions. It is found that the electric field may change direction, from forward to reverse, as long as the injection level reaches a criterion, affecting the carrier transport behavior. The models are based on the renovated p-n junction theory, provide insight into the carrier transit and are able to cover all levels of injection without the need to handle the low- and high-level injection separately. These models hold significance in retrieving the theoretical integrity of bipolar junction devices, and can be useful for further investigation in structure design, capacitance control, and AC performance optimization of the p-n junction-based device.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Ma Yuhan,Chen Jiajia,Hu Sideng,Yang Shiyou

DOI: https://doi.org/10.19595/j.cnki.1000-6753.tces.170594

2017-01-01

Abstract:To consider the effect of the displacement current and the skin effect of the electromagnetic phenomenon as well the stray parameters in a small time scale electromagnetic transient, which are not properly muddled in the existing model, a coupled 3D finite element-circuit model of an IGBT based power electronics device for its transient performance computation in small and extreme small time scales is developed and an iterative solution methodology is proposed. In order to describe the skin effect and displacement current, a three-dimensional (3D) finite element model of IGBT is developed; In order to model the influence of stray parameters, a high-order distributed circuit model of the whole power electronics system is proposed, and the numerical method for stray parameters computation is included. From the analysis of the internal electromagnetic transient process of an IGBT, an improved IGBT circuit model is proposed. In order to balance the accuracy and the computational cost of the high order circuit model of a complete power electronics system, a reduction method is proposed. The comparisons between the simulated and tested results evidence the feasibilities and merits of the proposed work.
A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Jiajia Chen,Shiyou Yang

DOI: https://doi.org/10.1109/tmag.2017.2665521

IF: 1.848

2017-01-01

IEEE Transactions on Magnetics

Abstract:To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model.
Extraction of Emitter and Base Series Resistances of Bipolar Transistors from a Single DC Measurement

M Linder,F Ingvarson,KO Jeppson,JV Grahn,SL Zhang,M Ostling

DOI: https://doi.org/10.1109/66.843626

IF: 2.7

2000-01-01

IEEE Transactions on Semiconductor Manufacturing

Abstract:A new procedure for extracting the emitter and base series resistances of bipolar junction transistors is presented. The parameters are extracted from a single measurement in the forward active region on one transistor test structure with two separate base contacts, making it a simple and attractive tool for bipolar transistor characterization. The procedure comprises two methods for extracting the emitter resistance and two for extracting the base resistance. The choice of method is governed by the amount of current crowding or conductivity modulation present in the intrinsic base region. The new extraction procedure was successfully applied to transistors fabricated in an in-house double polysilicon bipolar transistor process and a commercial 0.8-/spl mu/m single polysilicon BiCMOS process. We found that the simulated and measured Gummel characteristics are in excellent agreement and the extracted series resistances agree well with those obtained by means of HF measurements. By adding external resistors to the emitter and base and then extracting the series resistances, we verified that the two base contact test structure offers a simple means of separating the influence of emitter and base series resistances on the transistor characteristics.
Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's

CAI Rui-ren,LI Yao,LIU Rong-kan

DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.05.021

IF: 1.992

2006-01-01

Microelectronics Journal

Abstract:By solving Boltzmann energy transport equation,the electron temperature distribution in the base region was obtained,and a model for base transit time of ultra-thin base SiGe HBT's was developed with electron temperature distribution taken into consideration.This model takes into account the effect of electron temperature on mobility,bandgap narrowing due to heavy doping in base region and the Ge concentration,and carrier velocity saturation in the BC junction. Comparisons were made on cut-off frequencies between predictions of this model and simulation results from the drift diffusion model to demonstrate the utility and accuracy of the model.
Extraction Of The Intrinsic Base Region Sheet Resistance In Bipolar Transistors

F Ingvarson,M Linder,Ko Jeppson,Sl Zhang,Jv Grahn,M Ostling

DOI: https://doi.org/10.1109/BIPOL.2000.886200

2000-01-01

Abstract:A new method for extracting the intrinsic base sheet resistance in bipolar transistors is presented. In contrast to existing methods, which give the sheet resistance at a given forward bias, the method proposed here allows the determination of the zero-bias sheet resistance of the intrinsic base which is an important parameter in both process characterization and circuit design. Furthermore, the new method is not restricted to a narrow range of biases and emitter widths as existing methods since the effects of current crowding, base conductivity modulation and base width modulation are accurately taken into account in the extraction procedure.
A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

Jiajia Chen,Shiyou Yang,Zhuoxiang Ren

DOI: https://doi.org/10.1109/tmag.2019.2946283

IF: 1.848

2020-01-01

IEEE Transactions on Magnetics

Abstract:With the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the reliability of the transistor. In this regard, the network topological method is extended to develop a physics-based transient electrothermal model, considering both the 3-D heat complications and the nonlinearity of the thermal parameters, of an IGBT. The network topology method uses the graph theory to describe the network according to the network's geometric structure. Owing to its clear physical meaning, easiness in numerical implementation, and extremely high computational efficiency, the proposed 3-D model and method have an extraordinarily high computational efficiency compared with the finite-element method, and are more accurate than the 1-D lumped RC model, as evidenced by the numerical results as reported.
On Dc Modeling of the Base Resistance in Bipolar Transistors

M Linder,F Ingvarson,KO Jeppson,JV Grahn,SL Zhang,M Ostling

DOI: https://doi.org/10.1016/s0038-1101(00)00075-7

IF: 1.916

2000-01-01

Solid-State Electronics

Abstract:The total base resistance RBTot constitutes a crucial parameter in modeling bipolar transistors. The significant physical effects determining RBTot are current crowding and conductivity modulation in the base, both causing reduction of RBTot with increasing base current IB. In this paper, it is shown that the reduction of RBTot(IB) with increasing IB is directly related to the physical effect dominating in the base. A new model for RBTot(IB) is presented where a parameter α is introduced to account for the contributions of current crowding and conductivity modulation in the base. Theoretically, α is equal to 0.5 when conductivity modulation is dominant and close to 1.0 when current crowding is the most significant effect. This was verified by measurements and simulations using a distributed transistor model which accounts for the lateral distribution of the base current and the stored base charge. The model proposed for RBTot(IB) is very suitable for compact transistor modeling since it is given in a closed form expression handling both current crowding and conductivity modulation in the base. An accurate extraction procedure of the model parameters is also presented.
Efficient Thermal Analysis Method for Large Scale Compound Semiconductor Integrated Circuits Based on Heterojunction Bipolar Transistor

Shi-Zheng Yang,Hong-Liang Lv,Yu-Ming Zhang,Yi-Men Zhang,Bin Lu,Si-Lu Yan

DOI: https://doi.org/10.1088/1674-1056/27/10/108101

2018-01-01

Chinese Physics B

Abstract:In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature. The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semi-analytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.
A New Procedure For Extraction Of Series Resistances For Bipolar Transistors From Dc Measurements

M Linder,F Ingvarson,Ko Jeppson,Jv Grahn,Sl Zhang,M Ostling

DOI: https://doi.org/10.1109/ICMTS.1999.766233

1999-01-01

Abstract:A new procedure for direct extraction of the base and emitter resistances is presented. The parameters are extracted from a single measurement on a transistor test structure with two separated base contacts. The proposed extraction procedure was successfully applied to transistors fabricated in a double polysilicon bipolar transistor process and a commercial 0.8 mu m single polysilicon BiCMOS process. The extracted values show good agreement with those obtained by means of high frequency measurements. Furthermore, the method was verified by simulations and extraction from modelled data using a distributed resistor diode transistor model. Both emitter current crowding effects and conductivity modulation in the base are considered in the model. The comparison between measured and modelled transistor characteristics using the extracted values as input in the Gummel-Poon model also validates the DC extraction method. The method was found to be valid as long as conductivity modulation in the base is dominant over emitter current crowding effects as a cause for the decrease in the base resistance.
A Numerical Method for Solving the Physics-Based Model of IGBT with All Free-Carrier Injection Conditions in the Base Region

Jiajia Chen,Yuhan Ma,Shiyou Yang

DOI: https://doi.org/10.1108/compel-12-2016-0558

2017-01-01

Abstract:PurposeThe purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.Design/methodology/approachA numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.FindingsThe results of the proposed model are very close to the tested ones.Originality/valueA mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.
A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Joachim N. Burghartz,Slobodan Mijalković,Hui-Chun Wu

2006-01-01

Abstract:In this paper, a unifled parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the temperature and geometry parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference temperature and geometry.
A Procedure for Characterizing the BJT Base Resistance and Early Voltages Utilizing a Dual Base Transistor Test Structure

F Ingvarson,M Linder,KO Jeppson,SL Zhang,JV Grahn,M Ostling

DOI: https://doi.org/10.1109/icmts.2001.928633

2001-01-01

Abstract:The pinched-base extraction technique is investigated in detail. The separation of extrinsic and intrinsic base resistances utilizing the dependence of these resistances on transistor geometry is discussed. Uncertainties in extracted parameter values and deviations between nominal and real device geometry are shown to be two major problems associated with separation of the base resistance components. Also, the use of the extracted resistances in compact transistor modeling for circuit simulation is discussed. It is shown that the intrinsic base resistance obtained using the pinched-base technique does not necessarily translate directly into a compact model parameter. The dual base test structure used for resistance extraction is also used for extraction of the voltage dependent Early voltages. In contrast to previous methods which require the extrinsic base resistance, the method presented here does not require this parameter which, as shown here, can be difficult to extract. By using the new extraction method on transistors with different emitter widths, it was observed that the Early voltages decrease as the emitter width is increased and saturates at some value for very wide emitters. An explanation to the observed behavior, supported by device structure simulations, is also given
A Base Transit Time Model Considering Electron Temperature Effect in SiGe and SiGeC HBT

Li Yao

2010-01-01

JUSTC

Abstract:A closed-form physical model was given for SiGe and SiGeC HBT considering electron temperature effect.Incorporating electron temperature variation induced by high electric field(caused by Ge,C gradient) in the thin base,the base transit time shows different values compared with the drift-diffusion model.As Ge gradient increases,the difference can no longer be neglected.
A Scalable Mextram Model for Advanced Bipolar Circuit Design

Hui-Chun Wu

2007-01-01

Abstract:In this thesis, a referenced based scaling approach and its parameter extraction for the bipolar transistor model Mextram is proposed. It is mainly based on the physical properties of the Mextram parameters, which scale with the junction temperature and geometry of the bipolar transistor. The scalable electrical parameter in the scaling rules is normalized to a reference parameter at reference temperature and geometry. The scalable model is implemented in AHDL Verilog-A language, which can be used in many commercial simulators. Along with the scalable model, a unified extraction procedure for temperature and geometry parameters of the scalable model has been implemented in an IC-CAP model file using an example of high-speed SiGe HBT technology as a case study. The essential feature of the extraction methodology is a direct extraction of the temperature and geometry parameters from the measured electrical characteristics. The electrical model parameters as the reference parameters are extracted only once for a single reference temperature and geometry. No additional tool for temperature and geometry parameter extraction is needed. As a result, the accuracy is improved and the scalable model library generation time is greatly reduced.
An improved model for InP/InGaAs double heterojunction bipolar transistors

Yuxia Shi,Zhi Jin,Yongbo Su,Yuxiong Cao,Yan, Wang

DOI: https://doi.org/10.1016/j.sse.2012.10.019

IF: 1.916

2013-01-01

Solid-State Electronics

Abstract:An improved VBIC model for InP/InGaAs double heterojunction bipolar transistors (DHBTs) is proposed. The model accounts for the double heterojunction effect and current blocking effect with novel current expressions. New empirical formulas for the collector-base capacitance and transit time are developed to explain the mobile-charge modulation effect and the role of negative differential mobility. DC and S-parameter measurements are conducted in order to realize the whole extraction flow. The accuracy and validity of this new model and extraction strategy are demonstrated by comparisons of simulation to measurement data on DC, AC small-signal and large-signal characteristics over a wide bias region. (C) 2013 Elsevier Ltd. All rights reserved.
Monte Carlo Simulation and Macro-Model of Single-Electron Transistor

Haiding Sun,Jianjun Jiang

DOI: https://doi.org/10.3969/j.issn.1671-4776.2008.04.003

2008-01-01

Abstract:The generation mechanisms of these physical phenomena of Coulomb blockade,Coulomb staircase,single electron tunneling were described with single electron transistor(SET) as the research object.Combined with the micro-simulation and macro-model,how to use the Monte Carlo method together with Matlab to do the simulations of these physical phenomena were introduced.Meanwhile a SET could be treated as a equivalent macro-model circuit using classical electronic elements which could be analyzed and simulated by Hspice,a formidable software for simulating of large scale integrated circuits,thus saving magnitudes of calculming time.Through analyzing and comparing the curves derived from different methods,the results visually reflect the electrical characteristics of SET,which provide a theoretical basis for studying complex system.
A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

Jiajia Chen,Jiaqiang Yang,Shiyou Yang,S. L. Ho,Zhuoxiang Ren

DOI: https://doi.org/10.1109/tmag.2017.2771339

IF: 1.848

2018-01-01

IEEE Transactions on Magnetics

Abstract:To consider the nonlinear and 2-D characteristics of the carriers in the draft region of a planar-gate insulated-gate bipolar transistor, which are not properly modeled in the existing physics-based IGBT models, a 2-D ambipolar diffusion equation model is proposed and solved using the finite-element method. Moreover, a numerically iterative procedure is introduced to simply and efficiently solve the 2-D nonlinear finite-element equations. The numerical results of the transient performances obtained using the proposed model and solution methodology show a good agreement with those of the experiment ones, showing the high accuracy and feasibility of the proposed model and method.
A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

M. Sanden,S.-L. Zhang,J. V. Grahn,M. Ostling

DOI: https://doi.org/10.1109/16.861590

IF: 3.1

2000-01-01

IEEE Transactions on Electron Devices

Abstract:A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance.

A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors

Analytical model of collector current density and base transit time

Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Extraction of Emitter and Base Series Resistances of Bipolar Transistors from a Single DC Measurement

Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's

Extraction Of The Intrinsic Base Region Sheet Resistance In Bipolar Transistors

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

On Dc Modeling of the Base Resistance in Bipolar Transistors

Efficient Thermal Analysis Method for Large Scale Compound Semiconductor Integrated Circuits Based on Heterojunction Bipolar Transistor

A New Procedure For Extraction Of Series Resistances For Bipolar Transistors From Dc Measurements

A Numerical Method for Solving the Physics-Based Model of IGBT with All Free-Carrier Injection Conditions in the Base Region

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

A Procedure for Characterizing the BJT Base Resistance and Early Voltages Utilizing a Dual Base Transistor Test Structure

A Base Transit Time Model Considering Electron Temperature Effect in SiGe and SiGeC HBT

A Scalable Mextram Model for Advanced Bipolar Circuit Design

An improved model for InP/InGaAs double heterojunction bipolar transistors

Monte Carlo Simulation and Macro-Model of Single-Electron Transistor

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors