Abstract:Electromigration studies on Cu interconnects are reviewed. Some history and more recent results are discussed along with a description of the present interpretations of the active mass transport mechanisms involved in Cu electromigration. The issue of the dual-damascene process and its potential effect on EM reliability is described with special focus on the peculiarities of the dual-damascene interconnect architecture compared to more conventional subtractively etched Al-based interconnects. Experiments performed on dual-damascene interconnects that highlight electromigration reliability issues such as early failure, a tentative explanation for via electromigration failure, and the Blech effect, are summarized. Emphasis is placed on an experimental methodology that uses large interconnect ensembles in a multi-link configuration. Such a large scale study of nearly 10000 interconnects has shown statistical evidence of bimodal failure behavior consistent with the presence of a weak and strong failure mode, which have been identified as voiding, respectively, within the via and the trench at the cathode end of an interconnect. A multi-link approach has also demonstrated a length-dependent distribution of failures that yields a (j/spl middot/L)/sub c/ product value of about 9000 A/cm in dual-damascene Cu/oxide interconnections and is consistent with mass transport that is controlled by the presence of extended defects within Cu such as grain boundaries, interfaces, and/or surfaces. The study of dual-damascene Cu has demonstrated the importance of statistics in analyzing EM reliability.

Overview of Research on Electromigration Reliability of Copper Interconnects

Research and Development of the Cu Interconnect and Its Electromigration Failure

Computational Analysis of Mechanical and Electromigration Reliability Problems

Reservoir Effect and the Role of Low Current Density Regions on Electromigration Lifetimes in Copper Interconnects

Investigation of electromigration in copper interconnection of ULSI

Finite Element Analysis Of Electromigration Reliability In Copper Chip Interconnect

A Microstructure-Based Study on Electromigration in Cu Interconnects

The Study of the Reliability of Complex Components during the Electromigration Process

Progress of Electromigration in IC Interconnect Metallic Line

Electromigration reliability issues in dual-damascene Cu interconnections

Resistometric Study on Electromigration Failure in Copper Interconnects

The Evaluation on Electromigration Reliability of Copper Interconnect Structures with Extension

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Electromigration in Micro-Interconnections of Electronic Packaging

Research on the Electromigration Failure of W Interconnects under High-Temperature Environment

(Invited) Electromigration Reliability of Lead-Free Solder Interconnects

State of the Arts Cu Interconnect and Its Reliability in ULSI

Test Methods for Electromigration in IC Interconnects and Their Evaluations

The Progress of Electromigration in Bump Interconnect

Progress of Study on Electromigration Reliability in Lead-Free Solder