Abstract:Electromigration (EM), which describes the mass transport due to the momentum exchange between conducting electrons and diffusing metal atoms under an applied electric field, has become a serious reliability issue in high-density packaging. With the increasing demands for miniaturization, liquid-solid (L-S) EM will pose a critical challenge to the reliability of solder interconnects. In this work, The interfacial reactions and diffusion behaviors of In, Sn and Cu atoms in Cu/Sn-52In/Cu interconnects during L-S EM under a current density of 2.0x10(4) A/cm(2) at 120 and 180 degrees C have been in situ studied by using synchrotron radiation real-time imaging technology. During L-S EM, since there was no back-stress, the In atoms directionally migrated toward the anode due to the negative effective charge number (Z*) of In, which is different from the In atoms directionally migrated toward the cathode due to the back-stress induced by the preferential migration of the Sn atoms over the In atoms toward the anode during the solid-solid (S-S) EM. Furthermore, a modified expression for calculating the effective charge number Z* of liquid metals was proposed based on the enthalpy changes of melting process. The Z* of In atoms was calculated to be -2.30 and -1.14 at 120 and 180 degrees C, respectively, which was consistent with the migration behavior of In atoms. The model provides a theoretical basis for determining the direction of the EM. The polarity effect, evidenced by the IMC layer at the anode growing continuously while that at the cathode was restrained, was resulted from the directional migration of In and Cu atoms toward the anode during L-S EM, which was more significant at high temperature. The consumption of cathode Cu during L-S EM followed a parabolic relationship with the EM time, and the consumption rate was magnitude higher at high temperature. The migrations of In atoms was discussed in terms of diffusion flux.

Investigation of electromigration in copper interconnection of ULSI

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Reservoir Effect and the Role of Low Current Density Regions on Electromigration Lifetimes in Copper Interconnects

Research and Development of the Cu Interconnect and Its Electromigration Failure

Overview of Research on Electromigration Reliability of Copper Interconnects

Finite Element Analysis Of Electromigration Reliability In Copper Chip Interconnect

A Microstructure-Based Study on Electromigration in Cu Interconnects

Progress of Electromigration in IC Interconnect Metallic Line

The Study of the Reliability of Complex Components during the Electromigration Process

Resistometric Study on Electromigration Failure in Copper Interconnects

The Evaluation on Electromigration Reliability of Copper Interconnect Structures with Extension

The effect of stress migration on electromigration in dual damascene copper interconnects

Electromigration reliability issues in dual-damascene Cu interconnections

Electromigration behavior of 60 nm dual damascene Cu interconnects

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Electromigration in Micro-Interconnections of Electronic Packaging

Dependence of electromigration caused by different mechanisms on current densities in VLSI interconnects

Liquid-Solid Electromigration Behavior of Cu/Sn-52In/Cu Micro-Interconnect

Research on the Electromigration Failure of W Interconnects under High-Temperature Environment

Electromigration induced microstructure evolution and damage in asymmetric Cu/Sn-58Bi/Cu solder interconnect under current stressing

Effect of Electromigration on Interfacial Reaction in Cu/Sn-9Zn/Cu and Cu/Sn-9Zn/Ni Interconnects