Effect of BaWO4 doping on the microwave dielectric properties of BMT microwave ceramics

Sen PENG,Mengqiang WU,Yong XIAO,Li CHEN,Rui JIANG
DOI: https://doi.org/10.3969/j.issn.1001-2028.2011.11.001
2011-01-01
Abstract:BaWO4 doped Ba(Mg1/3Ta2/3)O3(BMT) microwave dielectric ceramics were prepared using the conventional electronic ceramic process.The effects of BaWO4 addition on the structure and microwave properties of BMT ceramics were investigated as a function of mass fraction of BaWO4 from 2% to 8%.It is found that the sinterability of BMT ceramics could be improved greatly by the addition of small amount of BaWO4.Compared with pure BMT ceramics,the BMT ceramic doped with 4%(mass fraction) BaWO4 shows a lower sintering temperature decreasing from 1 650 ℃ above to 1 400 ℃ with a bulk density of 7.562 g/cm3 and a relative density of 99%.In the meatime,the BMT ceramic exhibits superior microwave dielectric properties: εr =26.7,Q?f = 98 THz(8 GHz),τf =6.5×10–6 /℃.
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