Abstract:The manipulation of thermal transport is in increasing demand as heat transfer plays a critical role in a wide range of practical applications, such as efficient heat dissipation in nanoelectronics and heat conduction hindering in solid-state thermoelectrics. It is well established that the thermal transport in semiconductors and insulators (phonons) can be effectively modulated by structure engineering or materials processing. However, almost all the existing approaches involve altering the original atomic structure of materials, which would be hindered due to either irreversible structure change or limited tunability of thermal conductivity. Motivated by the inherent relationship between phonon behavior and interatomic electrostatic interaction, we comprehensively investigate the effect of external electric field, a widely used gating technique in modern electronics, on the lattice thermal conductivity (κ). Taking two-dimensional silicon (silicene) as a model, we demonstrate that by applying an electric field (Ez = 0.5 V Å-1) the κ of silicene can be reduced to a record low value of 0.091 W m-1 K-1, which is more than two orders of magnitude lower than that without an electric field (19.21 W m-1 K-1) and is even comparable to that of the best thermal insulation materials. Fundamental insights are gained from observing the electronic structures. With an electric field applied, due to the screened potential resulting from the redistributed charge density, the interactions between silicon atoms are renormalized, leading to phonon renormalization and the modulation of phonon anharmonicity through electron-phonon coupling. Our study paves the way for robustly tuning phonon transport in materials without altering the atomic structure, and would have significant impact on emerging applications, such as thermal management, nanoelectronics and thermoelectrics.

Suppression of Ballistic Electron Transmission Through A Semiconductor Ii-Structure by an External Transverse Electric Field

Electric-Field Effects on Electronic Tunneling Transport in Magnetic Barrier Structures

Voltage-tunable lateral shifts of ballistic electrons in semiconductor quantum slabs

Generating intense electric fields in 2D materials by dual ionic gating

External electric field driving the ultra-low thermal conductivity of silicene.

Influence of the Lateral Confining Potential on the Ballistic Electron Transport in a Quantum Wire

The electric field effect on spin injection in tunneling regime

Generating extreme electric fields in 2D materials by dual ionic gating

Evaluation of ballistic transport in III-V-based p-channel MOSFETs

Electron Optics with P-N Junctions in Ballistic Graphene

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Ballistic Transport in Extended Datta–Das Spin Field Effect Transistors

A Study on Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field

Unified Semiclassical Approach to Electronic Transport from Diffusive to Ballistic Regimes

Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer

Ballistic electronic devices

The Effect of Electron Confinement on the Transient Velocity Response in A Superlattice Miniband

Ballistic Transport in Planar 2-D ZnXN2 (X = Si, Ge) Transistors With Ultrahigh On-State Current

Asymmetric transmission of electrons in ballistic graphene

Ab initio electron dynamics in high electric fields: accurate predictions of velocity-field curves