Abstract:With the emerging of topological insulator (TI) and spin-transfer torque magnetic RAM (STT-MRAM), the electronic devices exploring the carrier transport with spin degree-of-freedom (i.e., spintronics) have come to spotlight. The advantages of these types of materials and devices include robustness to carrier scattering, hence the high mobility, and magnetism-switching without relying on the magnetic field, thus resulting in simple device structure and low-power operation. This talk focuses on the macroscopic modeling for carrier transport with electron-spin playing a critical role, and its application in analyzing the surface plasma-wave instability in the channel of TI-FET (field-effect transistor) for the purpose of THz signal generation. First, the formalism for the Boltzmann transport equation (BTE) with distribution function including the spin polarization density are reviewed. This BTE with spin-direction as another dimension in position-momentum phase space is named S-BTE. Then, the S-BTE is reformulated by using the moment-method to obtain a hydrodynamic (HD) equation, which, when applied to the electron transport in the channel of TI-FETs, forms the basis for the equation set of solving for plasma wave of channel electrons. Under certain biasing conditions for this set of equations, an effect named as DS [1] can be explored for the THz signal generation and the potential of using TI material for the channel is evaluated.In the theoretical part of S-BTE development, we discussed how to introduce the momentum-spin locking mechanism, which is a prominent feature in TI-based devices and how to introduce the scattering terms in S-BTE.

Ballistic Transport in Extended Datta–Das Spin Field Effect Transistors

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Conductance Oscillations in Spin Field-Effect Transistors

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Unified Semiclassical Approach to Electronic Transport from Diffusive to Ballistic Regimes

Combined effect of rashba spin-orbit interaction, hydrostatic pressure and temperature on energy dispersion based ballistic conductance of InAs tunnel-coupled (double) quantum wire under exterior magnetic and electric field

Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation

Effects of different lead magnetizations on the Datta-Das spin field-effect transistor

Modeling Of Carrier Transport With Spin Degree-Of-Freedom And Its Application To Analysis Of Topological Insulator (Ti) Fet Operation

Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

Longitudinal Spin Transport In Diluted Magnetic Semiconductor Superlattices: The Effect Of The Giant Zeeman Splitting

Revisit the spin-FET: Multiple reflection, inelastic scattering and lateral size effects

Ballistic electron transport in lateral antidot arrays investigated by scattering-matrix method

Ballistic transport and boundary resistances in inhomogeneous quantum spin chains

Spin-Dependent Transport Through Cd1-Xmnxte Diluted Magnetic Semiconductor Quantum Dots

Evaluation Of Quasi-Ballistic Transport In Nano-Mosfets By Deterministic Solver Of The Time Dependent Multi-Subbands Boltzmann Transport Equation

Scattering-Matrix Method For Ballistic Electron-Transport - Theory And An Application To Quantum Antidot Arrays

Physical Limits of the ballistic and non-ballistic Spin-Field-Effect Transistor: Spin Dynamics in Remote Doped Structures

Ballistic spin field-effect transistors: Multichannel effects

Quantum Transport Theory For Nanostructures With Rashba Spin-Orbital Interaction