Abstract:The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $\Omega$ carries opposite sign in the K and K' valleys. A sign reversal of $\Omega$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with opposite valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In bilayer graphene, the reversal of $\Omega$ can occur at the domain wall of AB and BA stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations such as valves and waveguides, but is technically challenging to realize. Here we fabricate a dual-split-gate structure in bilayer graphene and demonstrate transport evidence of the predicted metallic states. They possess a mean free path of up to a few hundred nanometers in the absence of a magnet field. The application of perpendicular magnetic field suppresses backscattering significantly and enables a 400-nanometer-long junction to exhibit conductance close to the ballistic limit of 4 $e^2/h$ at 8 Tesla. Our experiment paves the path to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

Generating extreme electric fields in 2D materials by dual ionic gating

Generating intense electric fields in 2D materials by dual ionic gating

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities

Self-aligned local electrolyte gating of 2D materials with nanoscale resolution

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Quenching the bandgap of two-dimensional semiconductors with a perpendicular electric field

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric alpha-In2Se3

Orthogonal Electric Control of the Out-Of-Plane Field-Effect in 2D Ferroelectric -In<sub>2</sub>Se<sub>3</sub>

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

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Full Control of Solid-State Electrolytes for Electrostatic Gating

Gate Induced Superconductivity in Layered Material Based Electronic Double Layer Field Effect Transistors

High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

Controlling many-body states by the electric-field effect in a two-dimensional material

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

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Gate-controlled topological conducting channels in bilayer graphene

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Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors