Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure

Hui-Ying Ren,Yue Mao,Ya-Ning Ren,Qing-Feng Sun,Lin He

2023-10-30

Abstract:Inducing and controlling electrostatic barriers in two-dimensional (2D) quantum materials has shown extraordinary promise to enable control of charge carriers, and is key for the realization of nanoscale electronic and optoelectronic devices1-10. Because of their atomically thin nature, the 2D materials have a congenital advantage to construct the thinnest possible p-n junctions1,3,7,9,10. To realize the ultimate functional unit for future nanoscale devices, creating atomically wide electrostatic barriers embedded in 2D materials is desired and remains an extremely challenge. Here we report the creation and manipulation of atomically wide electrostatic barriers embedded in graphene WSe2 heterostructures. By using a STM tip, we demonstrate the ability to generate a one-dimensional (1D) atomically wide boundary between 1T-WSe2 domains and continuously tune positions of the boundary because of ferroelasticity of the 1T-WSe2. Our experiment indicates that the 1D boundary introduces atomically wide electrostatic barriers in graphene above it. Then the 1D electrostatic barrier changes a single graphene WSe2 heterostructure quantum dot from a relativistic artificial atom to a relativistic artificial molecule.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: **How to create and manipulate electrostatic potential barriers with atomic - level width in two - dimensional materials, so as to achieve fine - grained control over the behavior of charge carriers and provide basic units for future nano - scale electronic and optoelectronic devices?**

Specifically, the paper focuses on embedding tunable electrostatic potential barriers with atomic - level width in the graphene/WSe₂ heterostructure. By using the tip of a scanning tunneling microscope (STM), researchers are able to generate one - dimensional atomic - level - width boundaries between 1T' - WSe₂ domain boundaries and continuously adjust the displacement of these boundaries. Such electrostatic potential barriers with atomic - level width can significantly change the quasi - bound states in graphene, thereby transforming a single graphene/WSe₂ heterostructure quantum dot from a relativistic artificial atom to a relativistic artificial molecule.

The following are the main contributions of the paper:

1. **Creation and regulation of electrostatic potential barriers with atomic - level width**:
- Generate and move one - dimensional atomic - level - width boundaries between 1T' - WSe₂ domain boundaries by using the STM tip.
- Achieve regulation of the boundary position with nano - scale precision.

2. **Change of quasi - bound states in graphene**:
- Research shows that electrostatic potential barriers with atomic - level width introduce highly localized electronic states.
- These barriers change the quasi - bound states within the quantum dot, making them transform from the relativistic artificial atom state to the relativistic artificial molecule state.

3. **Combination of theory and experiment**:
- Verify the experimental results through theoretical calculations and explain the influence of electrostatic potential barriers on electronic states.

4. **Potential applications**:
- Provide new design ideas for future nano - electronic devices, especially for applications that require fine - grained control of the behavior of charge carriers.

In summary, this research demonstrates the ability to create and manipulate electrostatic potential barriers with atomic - level width in two - dimensional materials, which lays the foundation for the development of next - generation nano - electronic and optoelectronic devices.