Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

Franz Herling,C. K. Safeer,Josep Ingla-Aynés,Nerea Ontoso,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1063/5.0006101

2020-06-16

Abstract:The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to achieve efficient and tunable Spin - to - Charge Conversion (SCC) through the van der Waals heterostructure of graphene and the transition metal dichalcogenide (TMD) material WSe₂. Specifically, the researchers hope to enhance the spin - orbit coupling (SOC) in graphene by introducing WSe₂ and use the gate voltage to control this conversion efficiency. The following are the main objectives and contributions of the paper:

1. **First observation of the spin Hall effect (SHE) in graphene/WSe₂**:
- This study first observed the spin Hall effect in the van der Waals heterostructure formed by graphene and WSe₂, and this effect can last up to room temperature.
- Different from other graphene/TMD devices, the only SCC mechanism in this system is the spin Hall effect, and the Rashba - Edelstein Effect (REE) has not been observed.

2. **Gate - voltage - regulated SCC**:
- Research shows that the SCC signal can be significantly regulated by applying a gate voltage. Specifically, the SCC signal can increase by 400% when a - 5 V gate voltage is applied and be completely suppressed at 5 V.
- This gate - regulation ability makes the SCC signal highly tunable, providing new possibilities for future applications based on spin - orbit logic or storage.

3. **Efficient spin - charge conversion**:
- This study shows a very high SCC efficiency. The measured SCC length (i.e., the product of the spin Hall angle θ_SH and the spin diffusion length λ_s) exceeds 20 nm and even reaches 41 nm under optimal conditions.
- This result is more than six times higher than the previously reported highest value, showing the superiority of the graphene/TMD heterostructure as an SCC material system.

4. **Temperature dependence and exploration of physical mechanisms**:
- The study also explored the temperature dependence of the SCC signal and found that the SCC signal is stronger at low temperatures, but the SCC signal can also be significantly enhanced at room temperature by applying a negative gate voltage.
- The experimental results show that valley - Zeeman SOC (derived from the sublattice symmetry breaking of WSe₂) dominates in graphene, while the influence of Rashba SOC is small.

In summary, this paper aims to experimentally verify the spin Hall effect in the graphene/WSe₂ heterostructure and show its high efficiency at room temperature and gate tunability, thereby providing an important reference for the design and application of future spintronics devices.