Quantification of mRNA encoding cytokines and chemokines in nasal biopsies from dogs with sino-nasal aspergillosis.

D. Peeters,I. Peters,C. Clercx,M. Day

DOI: https://doi.org/10.1016/J.VETMIC.2005.11.065

IF: 3.246

2006-05-31

Veterinary Microbiology

Abstract:

What problem does this paper attempt to address?

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Anamul Md. Hoque,Dmitrii Khokhriakov,Klaus Zollner,Bing Zhao,Bogdan Karpiak,Jaroslav Fabian,Saroj P. Dash

DOI: https://doi.org/10.1038/s42005-021-00611-6

2021-06-08

Communications Physics

Abstract:Abstract The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.

physics, multidisciplinary
Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Dmitrii Khokhriakov,Anamul Md. Hoque,Bogdan Karpiak,Saroj P. Dash

DOI: https://doi.org/10.1038/s41467-020-17481-1

2020-08-07

Abstract:Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a nonequilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Electrical control of spin and valley in spin-orbit coupled graphene multilayers

Taige Wang,Marc Vila,Michael P. Zaletel,Shubhayu Chatterjee

DOI: https://doi.org/10.1103/PhysRevLett.132.116504

2024-03-19

Abstract:Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated van der Waals heterostructures as a promising platform for spintronics and valleytronics.

Strongly Correlated Electrons,Mesoscale and Nanoscale Physics
Unconventional charge-spin conversion in Weyl-semimetal WTe2

Bing Zhao,Bogdan Karpiak,Dmitrii Khokhriakov,Annika Johansson,Anamul Md. Hoque,Xiaoguang Xu,Yong Jiang,Ingrid Mertig,Saroj P. Dash

DOI: https://doi.org/10.48550/arXiv.1910.06225

2019-10-14

Mesoscale and Nanoscale Physics

Abstract:An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, we report a charge current-induced spin polarization in the type-II Weyl semimetal candidate WTe2 and efficient spin injection and detection in a graphene channel up to room temperature. Contrary to the conventional spin Hall and Rashba-Edelstein effects, our measurements indicate an unconventional charge-to-spin conversion in WTe2, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe2 due to a reduced crystal symmetry combined with its large spin Berry curvature, spin-orbit interaction with a novel spin-texture of the Fermi states. We demonstrate a robust and practical method for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in a graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as non-magnetic spin sources in allelectrical van der Waals spintronic circuits and for low-power and high-performance non-volatile spintronic technologies.
Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

Franz Herling,C. K. Safeer,Josep Ingla-Aynés,Nerea Ontoso,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1063/5.0006101

2020-06-16

Abstract:The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

Mesoscale and Nanoscale Physics
All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature

Anamul Md. Hoque,Dmitrii Khokhriakov,Bogdan Karpiak,Saroj P. Dash

DOI: https://doi.org/10.48550/arXiv.1908.09367

2019-10-11

Abstract:The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW) heterostructures of two-dimensional materials. Here, we exploit a proximity-induced Rashba-Edelstein (REE) effect in vdW heterostructures of Weyl semimetal candidate MoTe2 and CVD graphene, where an unprecedented gate-controlled switching of spin-galvanic effect emerges due to an efficient spin-to-charge conversion at room temperature. The magnitude of the measured spin-galvanic signal is found to be an order of magnitude larger than the other systems, giving rise to a giant REE. The magnitude and the sign of the spin-galvanic signal are shown to be strongly modulated by gate electric field near the charge neutrality point, which can be understood considering the spin textures of the Rashba spin-orbit coupling-induced spin-splitting in conduction and valence bands of the heterostructure. These findings open opportunities for utilization of gate-controlled switching of spin-galvanic effects in spintronic memory and logic technologies and possibilities for realization of new states of matter with novel spin textures in vdW heterostructures with gate-tunable functionalities.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect

Priya Tiwari,Saurabh Kumar Srivastav,Aveek Bid

DOI: https://doi.org/10.48550/arXiv.2103.06529

2021-03-11

Mesoscale and Nanoscale Physics

Abstract:We report the discovery of electric-field-induced transition from a topologically trivial to a topologically nontrivial band structure in an atomically sharp heterostructure of bilayer graphene (BLG) and single-layer WSe2 per the theoretical predictions of Gmitra and Fabian [Phys. Rev. Lett. 119, 146401 (2017)]. Through detailed studies of the quantum correction to the conductance in the BLG, we establish that the band-structure evolution arises from an interplay between proximity-induced strong spin-orbit interaction (SOI) and the layer polarizability in BLG. The low-energy carriers in the BLG experience an effective valley Zeeman SOI that is completely gate tunable to the extent that it can be switched on or off by applying a transverse displacement field or can be controllably transferred between the valence and the conduction band. We demonstrate that this results in the evolution from weak localization to weak antilocalization at a constant electronic density as the net displacement field is tuned from a positive to a negative value with a concomitant SOI-induced splitting of the low-energy bands of the BLG near the K (K') valley, which is a unique signature of the theoretically predicted spin-orbit valve effect. Our analysis shows that quantum correction to the Drude conductance in Dirac materials with strong induced SOI can only be explained satisfactorily by a theory that accounts for the SOI-induced spin splitting of the BLG low-energy bands. Our results demonstrate the potential for achieving highly tunable devices based on the valley Zeeman effect in dual-gated two-dimensional materials.
Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves

Zhendong Chi,Seungjun Lee,Haozhe Yang,Eoin Dolan,C. K. Safeer,Josep Ingla-Aynés,Franz Herling,Nerea Ontoso,Beatriz Martín-García,Marco Gobbi,Tony Low,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1002/adma.202310768

2024-06-24

Abstract:A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS$_2$ van der Waals heterostructures by manipulating the distinct CDW phases in 1T-TaS$_2$. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains are at the origin of the switching of CSI. Our results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.

Materials Science
Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Jianbo Yin,Cheng Tan,David Barcons-Ruiz,Iacopo Torre,Kenji Watanabe,Takashi Taniguchi,Justin C W Song,James Hone,Frank H L Koppens,Justin C. W. Song,Frank H. L. Koppens

DOI: https://doi.org/10.1126/science.abl4266

IF: 56.9

2022-03-25

Science

Abstract:Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with nontrivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized midinfrared light, and confirm that the observed Hall voltage arises from an optically induced valley population. Compared with molybdenum disulfide (MoS 2 ), we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study the Berry curvature’s evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric optoelectronic devices, such as more robust switches and detectors.

multidisciplinary sciences
Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

L. Antonio Benítez,Williams Savero Torres,Juan F. Sierra,Matias Timmermans,Jose H. Garcia,Stephan Roche,Marius V. Costache,Sergio O. Valenzuela

DOI: https://doi.org/10.1038/s41563-019-0575-1

2019-08-21

Abstract:Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies.

Mesoscale and Nanoscale Physics,Applied Physics
Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

P. Dey,Luyi Yang,C. Robert,G. Wang,B. Urbaszek,X. Marie,S. A. Crooker

DOI: https://doi.org/10.48550/arXiv.1704.05448

2017-04-18

Mesoscale and Nanoscale Physics

Abstract:Using time-resolved Kerr rotation, we measure the spin/valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe2. In the n-type regime, we observe long (70 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields $B_y$, indicating spin relaxation. In marked contrast, extraordinarily long (2 microsecond) polarization relaxation of holes is revealed in the p-type regime, that is unaffected by $B_y$, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.
Optical control of berry curvature in gated WSe 2 bilayers

Majeed Ur Rehman,Zia Ur Rahman,Azizur Rahman,Waqas Ahmad,Sadeeq Ullah

DOI: https://doi.org/10.1088/2053-1583/ad6ba2

IF: 6.861

2024-08-30

2D Materials

Abstract:Unlike single layers of 2H transition metal dichalcogenides (TMDCs), bilayers of 2H TMDCs maintain inversion and time reversal (TR) symmetries, resulting in a vanishing Berry curvature ( Ω ( k ) ∼ 0 ) that inhibits various potential transport phenomena. A nonzero Berry curvature ( Ω ( k ) ≠ 0 ) is imperative for the occurrence of several unconventional transport phenomena, including the anomalous Hall effect and the anomalous Nernst effect. To overcome this limitation, we break these symmetries in bilayer TMDCs using electrostatic gating and circularly polarized light as external means. For non-gated WSe 2 bilayers, circularly polarized light breaks TR symmetry, creating a finite Berry curvature signal in both conduction and valence bands, controllable by light intensity and its polarity. In gated WSe 2 bilayers, where inversion symmetry is also broken, we observe a sign reversal in Berry curvature within the conduction bands, the extent of which depends on the relative strengths of the electric gating and light intensity. Overall, under finite bias and light intensity, the 2H bilayers of WSe 2 exhibits finite spin Hall, valley Hall, and anomalous Hall conductivities, which depend on the strengths of the applied perturbations.

materials science, multidisciplinary
Spin-orbit and exchange proximity couplings in graphene/1T-TaS$_2$ heterostructure triggered by a charge density wave

Karol Szałowski,Marko Milivojević,Denis Kochan,Martin Gmitra

DOI: https://doi.org/10.1088/2053-1583/acbb19

2023-01-28

Abstract:Proximity-induced fine features and spin-textures of the electronic bands in graphene-based van der Waals heterostructures can be explored from the point of tailoring a twist angle. Here we study spin-orbit coupling and exchange coupling engineering of graphene states in the proximity of 1T-TaS$_2$ not triggering the twist, but a charge density wave in 1T-TaS$_2$-a realistic low-temperature phase. Using density functional theory and effective model we found that the emergence of the charge density wave in 1T-TaS$_2$ significantly enhances Rashba spin-orbit splitting in graphene and tilts the spin texture by a significant Rashba angle-in a very similar way as in the conventional twist-angle scenarios. Moreover, the partially filled Ta $d$-band in the charge density wave phase leads to the spontaneous emergence of the in-plane magnetic order that transgresses via proximity from 1T-TaS$_2$ to graphene, hence, simultaneously superimposing along the spin-orbit also the exchange coupling proximity effect. To describe this intricate proximity landscape we have developed an effective model Hamiltonian and provided a minimal set of parameters that excellently reproduces all the spectral features predicted by the first-principles calculations. Conceptually, the charge density wave provides a highly interesting knob to control the fine features of electronic states and to tailor the superimposed proximity effects-a sort of twistronics without twist.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons
AControl of Charge‐Spin Interconversion in Van Der Waals Heterostructures with Chiral Charge Density Waves

Zhendong Chi,Seungjun Lee,Haozhe Yang,Eoin Dolan,C. K. Safeer,Josep Ingla‐Aynés,Franz Herling,Nerea Ontoso,Beatriz Martín‐García,Marco Gobbi,Tony Low,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1002/adma.202310768

IF: 29.4

2024-01-20

Advanced Materials

Abstract:A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low‐dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its practical application remains limited. Here, we show an unprecedented demonstration of a tunable charge‐spin interconversion (CSI) in graphene/1T‐TaS2 van der Waals heterostructures by manipulating the distinct CDW phases in 1T‐TaS2. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first‐principles calculations, which evidence that chiral CDW multidomains in the heterostructure are at the origin of the switching of CSI. Our results uncover a new approach for on‐demand CSI in low‐dimensional systems, paving the way for advanced spin‐orbitronic devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Boxuan Yang,Bibek Bhujel,Daniel G. Chica,Evan J. Telford,Xavier Roy,Maxen Cosset-Chéneau,Bart J. van Wees

2023-12-12

Abstract:The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 to 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from -50 % to +69 % in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

Mesoscale and Nanoscale Physics,Materials Science
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Justin Boddison-Chouinard,Marek Korkusinski,Alex Bogan,Pedro Barrios,Philip Waldron,Kenji Watanabe,Takashi Taniguchi,Jarosław Pawłowski,Daniel Miravet,Pawel Hawrylak,Adina Luican-Mayer,Louis Gaudreau

2024-10-15

Abstract:Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within these materials lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spin depending on which valley they reside. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of tungsten diselenide to 1D via electrostatic confinement, we demonstrate that spin-valley locking in combination with strong hole-hole interactions lead to a ferromagnetic state in which hole transport through the 1D system is spin-valley polarized, even without an applied magnetic field, and that the persistence of this spin-valley polarized configuration can be tuned by a global back-gate. This observation opens the possibility of implementing a robust and stable valley polarized system, essential for valleytronic applications.

Mesoscale and Nanoscale Physics
Spin and valley polarized one-way Klein tunneling in photonic topological insulators

Xiang Ni,David Purtseladze,Daria A. Smirnova,Alexey Slobozhanyuk,Andrea Alù,Alexander B. Khanikaev

DOI: https://doi.org/10.48550/arXiv.1707.05802

2017-07-19

Abstract:Advances of condensed matter physics in exploiting the spin degree of freedom of electrons led to the emergence of the field of spintronics, which envisions new and more efficient approaches to data transfer, computing, and storage [1-3]. These ideas have been inspiring analogous approaches in photonics, where the manipulation of an artificially engineered pseudo-spin degrees of freedom is enabled by synthetic gauge fields acting on light [4,5,6]. The ability to control these additional degrees of freedom can significantly expand the landscape of available optical responses, which may revolutionize optical computing and the basic means of controlling light in photonic devices across the entire electromagnetic spectrum. Here we demonstrate a new class of photonic systems, described by effective Hamiltonians in which competing synthetic gauge fields engineered in pseudo-spin, chirality/sublattice and valley subspaces result in band gap opening at one of the valleys, while the other valley exhibits Dirac-like conical dispersion. It is shown that such effective response has dramatic implications on photon transport, among which: (i) spin-polarized and valley-polarized one-way Klein tunneling and (ii) topological edge states that coexist within the Dirac continuum for opposite valley and spin polarizations. These phenomena offer new ways to control light in photonics, in particular for on-chip optical isolation, filtering and wave-division multiplexing by selective action on their pseudo-spin and valley degrees of freedom.

Materials Science,Other Condensed Matter,Optics
Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

Chaiyawan Saipaopan,Wachiraporn Choopan,Watchara Liewrian

DOI: https://doi.org/10.1007/s10948-021-05841-x

2021-04-29

Journal of Superconductivity and Novel Magnetism

Abstract:The influence of spatial variation of Fermi velocity on the spin-polarized transport properties of massless Dirac fermions in proximity-induced ferromagnetic graphene junction was investigated. We found that the velocity ratio ξ causing the width of the spin conductance dip near the Dirac point is broadened as the Fermi velocity ratio increases. In contrast, the effect of the Fermi velocity mismatch does not affect the shifting of the Dirac point. It leads to the indirect measurement of the Fermi velocity ratio that can be tuned by the spin-dependent conductance. In addition to the presence of both the exchange field and the Fermi velocity modulation, we found high spin filtering occurs when the Fermi velocity ratio ξ ≥ 1. Due to the transmission probability of electron with spin down, T↓ is blocked by the effect of Fermi velocity modulation similar to waves travelling through a different media. Moreover, we also found that the resonant transmission of the electron with spin up can be perfectly transmitted through the Fermi velocity barrier at the limit injected angle θ → π/2 for H/EF ≈ 1. The spin transport properties can be controlled by suitably modifying the strength of the ferromagnetic insulator and varying the Fermi velocity modulation, which leads to the highest spin polarization. By manipulating the behavior of spin-dependent collimation and spin beam splitting in this structure, we proposed a spin transport device for making lateral spin polarization. These interesting features will help make the development of spintronic devices in the graphene-based nanostructure.

physics, condensed matter, applied
Berry curvature, orbital magnetization, and Nernst effect in biased bilayer WSe$_2$

Liu Chengyan,Yue-yu Zhang,Yusheng Hou,Shiyou Chen,Hongjun Xiang,X. G. Gong

DOI: https://doi.org/10.1103/physrevb.00.005400

2020-01-01

Abstract:A valley-contrasting Berry curvature in bilayer transition metal dichalcogenides with spin-orbit coupling can generate valley magnetization when the inversion symmetry is broken, for example, by an electric field, regardless of time-reversal symmetry. A nontrivial Berry curvature can also lead to anomalous transport responses, such as the anomalous Hall effect and the anomalous Nernst effect. Applied to a bilayer WSe$_2$, an electric field can tune the Berry curvature and orbital magnetic moment, which has important consequences for the orbital magnetization and the anomalous Nernst responses. The orbital magnetization and its two contributions, one due to the magnetic moment and one due to the Berry curvature, are calculated and interpreted in terms of opposite circulating currents of the bands in the two layers. The valley anomalous Nernst coefficient and spin Nernst coefficient are also calculated. We find that a finite electric field leads to peaks and dips in the Nernst responses that have the signs of the Berry curvatures of the bands and are proportional to their magnitudes; it also enhances the valley Nernst responses. These experimentally verifiable findings may be promising for caloritronic applications.

Quantification of mRNA encoding cytokines and chemokines in nasal biopsies from dogs with sino-nasal aspergillosis.

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Electrical control of spin and valley in spin-orbit coupled graphene multilayers

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature

Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect

Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

Optical control of berry curvature in gated WSe 2 bilayers

Spin-orbit and exchange proximity couplings in graphene/1T-TaS$_2$ heterostructure triggered by a charge density wave

AControl of Charge‐Spin Interconversion in Van Der Waals Heterostructures with Chiral Charge Density Waves

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Spin and valley polarized one-way Klein tunneling in photonic topological insulators

Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

Berry curvature, orbital magnetization, and Nernst effect in biased bilayer WSe$_2$