Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field

Rui Zhang,Guoqiang Hao,Xiaojun Ye,Shangpeng Gao,Hongbo Li

DOI: https://doi.org/10.1039/d0cp04160b

IF: 3.3

2020-01-01

Physical Chemistry Chemical Physics

Abstract:Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge.

What problem does this paper attempt to address?

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Rui Zhang,Guoqiang Hao,Xiaojun Ye,Shangpeng Gao,Hongbo Li

DOI: https://doi.org/10.1039/d0cp04160b

IF: 3.3

2020-01-01

Physical Chemistry Chemical Physics

Abstract:Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge. To solve this issue, the electronic properties and Schottky barrier of the graphene/WSe2 heterostructure are investigated by the first-principles method under out-of-plane strain and an electric field. Our results show that the WSe2 monolayer and graphene could form a stable van der Waals heterostructure and the intrinsic electronic properties are well preserved. Furthermore, a transformation of a Schottky contact from the n-type to p-type occurs at d = 3.87 angstrom and E = +0.06 V angstrom(-1). In addition, an ohmic contact is formed with E = -0.50, +/- 0.60 V angstrom(-1). Lastly, the effective masses of electrons and holes are calculated to be 0.057m(0) and -0.055m(0) at the equilibrium state, respectively, indicating that the heterostructure has a high carrier mobility. Our research will provide promising approaches for the future design and development of graphene/WSe2 nano-field effect transistors.
Tunable Schottky Barrier in Graphene/xag4y (X, Y = S, Se, Te) Heterostructures

Yujiao Ye,Lei Gao,Yufei Xue,Xiao Fan,Weina Ren,Xuxia Shai,Tingting Wei,Chunhua Zeng,Hua Wang

DOI: https://doi.org/10.1016/j.cjph.2023.05.006

IF: 3.957

2023-01-01

Chinese Journal of Physics

Abstract:•Graphene/XAg4Y (X, Y = S, Se, and Te) possess different graphene/X interface, resulting in various Schottky barrier heights and contact types.•Schottky barrier heights and contact types can be modulated by the vertical strain and external electric field.•The mechanism of the tunable Schottky barrier via the vertical strain and external electric field are investigated.•Vertical strain or external electric field underlies that the relative Dirac-cone position of graphene in heterostructures can be tuned.
Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Dingbo Zhang,Yue Hu,Hongxia Zhong,Shengjun Yuan,Chang Liu

DOI: https://doi.org/10.1039/c9nr04287c

IF: 6.7

2019-01-01

Nanoscale

Abstract:Contacts between graphene and two-dimensional (2D) semiconductors have been widely investigated because of their tunable Schottky barrier height (SBH) by means of applied out-of-plane strains, electric fields, etc. Here, based on first-principles calculations, we study the effects of out-of-plane strains (a tensile or compressive strain) and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures. The calculated results indicate that p-type Schottky barriers are formed at the graphene/AlTe and graphene/BTe interfaces with 0.72 and 0.49 eV, respectively. The increase in the interlayer distances (tensile strains) between graphene and MTe can induce a transition from a p-type to n-type Schottky contact. On the other hand, the decrease in the interlayer distances (compressive strains) can transform graphene/MTe into semiconductors, which originates from graphene/MTe with a large compressive strain that makes the two carbon sublattices inequivalent, inducing a band gap. In addition, the applied electric fields can modulate effectively the contact formation (a Schottky or Ohmic contact) and the doping of graphene in graphene/MTe heterostructures. Our study suggests two facile methods to tune the electronic properties of graphene/MTe heterostructures and offer a possibility for graphene/MTe heterostructure-based electronic devices.
Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Wenjing Zhang,Guoqiang Hao,Rui Zhang,Jiahui Xu,Xiaojun Ye,Hongbo Li

DOI: https://doi.org/10.1016/j.jpcs.2021.110189

IF: 4.383

2021-10-01

Journal of Physics and Chemistry of Solids

Abstract:Fabricating a low Schottky barrier is still a great challenge in electrical transport behavior of nano field effect transistors (FETs). To settle this problem, the electronic properties and Schottky contact of the graphene/MoSe2 heterojunction employing various vertical strains and external electrical fields are investigated with density functional theory (DFT) to obtain low Schottky barrier. Our calculation illustrates that in the graphene/MoSe2 heterojunction, the intrinsic electronic properties of components are well preserved owing to the weak van der Waals (vdW) mutual interaction between graphene and MoSe2 monolayer. Furthermore, there is an n-type Schottky contact formed with an n-type Schottky barrier height (SBH) of 0.56 eV at the interface of graphene/MoSe2 heterojunction. It is worth noting that the type and the height of Schottky barrier are susceptible to the external electrical field or strain employed perpendicularly to the graphene/MoSe2 heterojunction. And the SBH of the interface can be reduced by tuning the interlayer distance (d) or the electrical field intensity (E). Moreover, Schottky contact transforms from n-type to p-type at d = 3.22 Å or E = +0.08 V/Å. Additionally, the Ohmic contact occurs when the magnitude of positive or negative electrical field is larger than 0.40 V/Å, respectively. Additionally, the heterojunction maintaining high carrier mobility is inferred from the effective masses of electron and hole, namely, 0.074 m0 and 0.055 m0, respectively. Our study may put forward effective strategies to enhance the electronic performance of MoSe2-based vdW heterojunction FETs.

physics, condensed matter,chemistry, multidisciplinary
Lowering the Schottky Barrier Height of G/WSSe Van Der Waals Heterostructures by Changing the Interlayer Coupling and Applying External Biaxial Strain

W. X. Zhang,Y. Yin,C. He

DOI: https://doi.org/10.1039/d0cp04474a

2020-01-01

Abstract:Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors. However, the Schottky barrier generated by the contact between metal and semiconductor hinders the conduction of electrons, so it is necessary to effectively adjust the Schottky barrier and form a low-resistance Ohmic contact. Based on first-principles calculations, graphene/WSSe (G/WSSe) heterostructures have been established and the corresponding electronic properties have been studied. Firstly, these heterostructures form an n-type Schottky contact with a SBH of 0.35 eV and a p-type Schottky contact with a SBH of 0.66 eV at their respective interfaces. In addition, the Schottky contact can be significantly adjusted by changing the interlayer coupling or applying an external biaxial strain, and an Ohmic contact could also be formed under the biaxial strain. This study not only offers a basic understanding of G/WSSe heterostructures, but also provides a reference for the application of G/WSSe heterostructures in optoelectronic and nanoelectronic devices.
Strain engineering on the electronic properties and interface contact of graphene/GeN3 van der Waals heterostructure

Yu Shu,Kaijun He,Rui Xiong,Zhou Cui,Xuhui Yang,Chao Xu,Jingying Zheng,Cuilian Wen,Bo Wu,Baisheng Sa

DOI: https://doi.org/10.1016/j.apsusc.2022.154540

IF: 6.7

2022-12-01

Applied Surface Science

Abstract:Graphene-based van der Waals (vdW) heterostructures have shown great potential in electronic and optoelectronic nanodevices. Herein, we investigate the electronic property and Schottky barrier of graphene/GeN3 vdW heterostructure by first-principles calculations. It is noted that the electronic natures of graphene and GeN3 monolayers are well preserved in the heterostructure lattice due to the weak vdW interaction. Interestingly, the p-type Schottky contact in graphene/GeN3 heterostructure with a barrier height of 0.21 eV can be effectively tuned by both vertical and horizontal strains. Herein, the carrier concentration in the graphene layer reaches ∼1013 cm−2 level by strain engineering. It is noteworthy that the designed optoelectronic field-effect transistor based on graphene/GeN3 heterostructure exhibits distinguished responsivity of 0.297 AW−1 and impressive external quantum efficiency of 54.5% under illumination based on further non-equilibrium Green's function simulations. Our findings are of utmost significance for the metal–semiconductor vdW contact and corresponding applications in high-performance electronic and optoelectronic devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

Wenyan Zan,Wei Geng,Huanxiang Liu,Xiaojun Yao

DOI: https://doi.org/10.1039/c5cp06029j

IF: 3.3

2016-01-01

Physical Chemistry Chemical Physics

Abstract:Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, themost common defect in MoS2.
Van Der Waals Graphene/mos2 Heterostructures: Tuning the Electronic Properties and Schottky Barrier by Applying a Biaxial Strain

Qinglong Fang,Min Li,Xumei Zhao,Lin Yuan,Boyu Wang,Caijuan Xia,Fei Ma

DOI: https://doi.org/10.1039/d1ma00806d

2021-01-01

Materials Advances

Abstract:The interlayer distance and biaxial strain affect the electronic properties and contact properties of graphene/MoS2 heterostructures.
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

Xuefeng Lu,Lingxia Li,Jianhua Luo,Xin Guo,Junqiang Ren,Hongtao Xue,Hui Li

DOI: https://doi.org/10.1016/j.vacuum.2021.110208

IF: 4

2021-06-01

Vacuum

Abstract:Graphene-based van der Waals (vdW) heterostructures have currently emerged as a promising application in the construction of next-generation electronic and optoelectronic devices. In this present contribution, through the comprehensive first-principle calculations, the electronic characteristics along with the Schottky barrier of graphene/β-silicon nitride(0001) heterostructure are theoretically investigated, considering external strain and electric fields effects. The results concluded that the electronic performance of both the graphene monolayer and β-Si3N4(0001) surface are perfectly maintained in the heterostructure on account of a weak interlayer vdW force between them. Furthermore, the graphene/β-Si3N4 (0001) heterostructure forms a p-type Schottky contact with the SBH of 0.72 eV, which can be modified by using normal strain or perpendicular electric field. It is found that the heterostructure still maintains a p-type Schottky contact when the interlayer spacing from 2.2 Å to 4.4 Å or when the applied positive electric field is smaller than 0.2 V/Å. Most importantly, a transformation from the p-type Schottky contact to Ohmic one is observed in the heterostructure at an electric field of +0.2 V/Å. The above results are expected to provide a practical guidance for designing and fabrication of the novel nanoelectronic devices based on graphene/β-Si3N4 vdW heterostructure.

materials science, multidisciplinary,physics, applied
Tunable Schottky Contact in the Graphene/wse2(1−x)o2x Heterostructure by Asymmetric O Doping

Rui Zhang,Guoqiang Hao,Xiaojun Ye,Wenjing Zhang,Hongbo Li

DOI: https://doi.org/10.1063/5.0044276

IF: 2.877

2021-01-01

Journal of Applied Physics

Abstract:Tuning the electrical transport properties of a nanoelectronic device with a p-type Schottky contact remains a grand challenge. To solve this issue, we explore the effectiveness of asymmetric O doping on performance improvements of the graphene/WSe2(1−x)O2x (Gr/WSe2(1−x)O2x) heterostructure using first-principles calculations. The results show that graphene and the WSe2(1−x)O2x monolayer could form a stable van der Walls interface. Further, the controlled asymmetric O doping at different positions and concentrations regulates the electronic properties of the Gr/WSe2(1−x)O2x heterostructure in terms of the type and the height of the Schottky barrier. It is found that a transformation of a Schottky contact from an n-type to p-type is realized by changing the position of the O dopant from inside to outside, and a high Schottky barrier height of 0.72 eV in the undoped Gr/WSe2 heterostructure can be reduced to 0.06 and 0.09 eV for the O doing inside and outside the interface, respectively. In addition, when the O doping concentration increases to 67% both inside and outside of the interface, the Ohmic contacts are observed. Last, the controllable Schottky contact in the Gr/WSe2(1−x)O2x heterostructure is induced by the charge redistribution of the interface, which is caused by the shift of the Fermi level. This work may provide a promising method to improve the electronic performance of the Gr/WSe2 nano field effect transistors.
Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure

Hui-Ying Ren,Yue Mao,Ya-Ning Ren,Qing-Feng Sun,Lin He

2023-10-30

Abstract:Inducing and controlling electrostatic barriers in two-dimensional (2D) quantum materials has shown extraordinary promise to enable control of charge carriers, and is key for the realization of nanoscale electronic and optoelectronic devices1-10. Because of their atomically thin nature, the 2D materials have a congenital advantage to construct the thinnest possible p-n junctions1,3,7,9,10. To realize the ultimate functional unit for future nanoscale devices, creating atomically wide electrostatic barriers embedded in 2D materials is desired and remains an extremely challenge. Here we report the creation and manipulation of atomically wide electrostatic barriers embedded in graphene WSe2 heterostructures. By using a STM tip, we demonstrate the ability to generate a one-dimensional (1D) atomically wide boundary between 1T-WSe2 domains and continuously tune positions of the boundary because of ferroelasticity of the 1T-WSe2. Our experiment indicates that the 1D boundary introduces atomically wide electrostatic barriers in graphene above it. Then the 1D electrostatic barrier changes a single graphene WSe2 heterostructure quantum dot from a relativistic artificial atom to a relativistic artificial molecule.

Mesoscale and Nanoscale Physics,Materials Science
Tuning the Schottky Contacts at the Graphene/Ws2 Interface by Electric Field

Fang Zhang,Wei Li,Yaqiang Ma,Yanan Tang,Xianqi Dai

DOI: https://doi.org/10.1039/c7ra00589j

IF: 4.036

2017-01-01

RSC Advances

Abstract:Using the first-principle calculations, we study the electronic structures of graphene/WS2 van der Waals (vdW) heterostructures by applying an external electric field (E-ext) perpendicular to the heterobilayers. It is demonstrated that the intrinsic electronic properties of graphene and WS2 are quite well preserved due to the weak vdW contact. We find that n-type Schottky contacts with a significantly small Schottky barrier are formed at the graphene/WS2 interface and p-type (hole) doping in graphene occurs during the formation of graphene/WS2 heterostructures. Moreover, the Eext is effective to tune the Schottky contacts, which can transform the n-type into p-type and ohmic contact. Meanwhile, p-type (hole) doping in graphene is enhanced under negative Eext and a large positive Eext is required to achieve n-type (electron) doping in graphene. The Eext can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/WS2 interface. The present study would open a new avenue for application of ultrathin graphene/WS2 heterostructures in future nano-and optoelectronics.
Strain Effects on the Schottky Contacts of Graphene and MoSe2 Heterobilayers

Fang Zhang,Wei Li,Yaqiang Ma,Xianqi Dai

DOI: https://doi.org/10.1016/j.physe.2018.06.023

IF: 3.369

2018-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Combining the electronic structures of two-dimensional monolayers in ultrathin heterostructures is expected to display new properties beyond their individual components. Here, first-principles calculations are performed to investigate the effect of strain on the electronic structures of graphene/MoSe2 heterostructures. We find that the intrinsic properties of both graphene and MoSe2 are preserved by the weak van der Waals (vdW) contact. Moreover, the n-type Schottky barrier to p-type Schottky barrier transition occurs when the heterostructure is subjected to the strain, which indicates that the Schottky barrier can be tuned effectively by the strain in the heterostructure. Notice that it is difficult to tune the Schottky contact to the Ohmic contact (no barrier) by using only the strain at the graphene/MoSe2 interface. Our studies provide a promising route to design new graphenebased heterostructures and explore its potential applications in nanoelectronic and optoelectronic devices.
Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.

Yu-Chuan Lin,Jun Li,Sergio C de la Barrera,Sarah M Eichfeld,Yifan Nie,Rafik Addou,Patrick C Mende,Robert M Wallace,Kyeongjae Cho,Randall M Feenstra,Joshua A Robinson

DOI: https://doi.org/10.1039/c6nr01902a

IF: 6.7

2016-01-01

Nanoscale

Abstract:Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low-energy electron microscopy and reflectivity on these samples, we extract the work function difference between the WSe2 and graphene and employ a charge transfer model to determine the WSe2 carrier density in both cases. The results indicate that WSe2-EGFH displays ohmic behavior at small biases due to a large hole density in the WSe2, whereas WSe2-EGPH forms a Schottky barrier junction.
Electric Field Tunable Interlayer Relaxation Process and Interlayer Coupling in WSe2/Graphene Heterostructures

Yang Li,Jing-Kai Qin,Cheng-Yan Xu,Jian Cao,Zhao-Yuan Sun,Lai-Peng Ma,Ping An Hu,Wencai Ren,Liang Zhen

DOI: https://doi.org/10.1002/adfm.201505412

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:Transition metal dichalcogenides van der Waals (vdWs) heterostructures present fascinating optical and electronic phenomena, and bear tremendous significance for electronic and optoelectronic applications. As the significant merits in vdWs heterostructures, the interlayer relaxation of excitons and interlayer coupling at the heterointerface reflect the dynamic behavior of charge transfer and the coupled electronic/structural characteristics, respectively, which may give rise to new physics induced by quantum coupling. In this work, upon tuning the photoluminescence (PL) properties of WSe2/graphene and WSe2/MoS2/graphene heterostructures by virtue of electric field, it is demonstrated that the interlayer relaxation of excitons at the heterointerface in WSe2/graphene, which is even stronger than that in MoS2/graphene and WSe2/MoS2 , plays a dominant role in PL tuning in WSe2/graphene, while the carrier population in WSe2 induced by electric field has a minor contribution. In addition, it is discovered that the interlayer coupling between monolayer WSe2 and graphene is enhanced under high electric field, which breaks the momentum conservation of first order Raman‐allowed phonons in graphene, yielding the enhanced Raman scattering of defects in graphene. The interplay between electric field and vdWs heterostructures may provide versatile approaches to tune the intrinsic electronic and optical properties of the heterostructures.
Tunable Schottky barriers and electronic properties in van der Waals heterostructures of semiconducting monolayer gold sulfides and graphene

Yufei Xue,Lei Gao,Han Liu,Weina Ren,Xuxia Shai,Tingting Wei,Yafang Tian,Chunhua Zeng

DOI: https://doi.org/10.1016/j.apsusc.2021.149654

IF: 6.7

2021-07-01

Applied Surface Science

Abstract:Two-dimensional metal-semiconductor heterostructures with tunable Schottky barriers are currently attracting extensive interests, owing to their novel properties and potential applications in nanodevices. Here, heterostructures of semiconducting monolayer gold sulfides and graphene (Gr) with tunable Schottky barriers and contact types are reported based on first-principles calculations. α-, β-Au2S/Gr are n-type Schottky contacts with <math>Φn</math> = 0.14 eV and 1.24 eV, respectively. They could be transformed into p-type Schottky contacts via applying vertically compressive strain. α-, β-, γ-AuS/Gr are ohmic, p-type and n-type Schottky contacts with <math>Φn</math> = -0.34 eV, <math>Φp</math> = 0.22 eV, <math>Φn</math> = 0.22 eV, respectively. The ohmic contact of α-AuS/Gr evolves to a n-type Schottky contact with increasing vertically compressive strain, while the p-type Schottky contact of β-AuS/Gr changes to an ohmic contact. Furthermore, the mechanism of Schottky-barrier modulation via vertical strain underlies that the relative Dirac-cone position of Gr in heterostructures can be tuned by adjusting interfacial charge rearrangement. Benefitting from the tunable Schottky barriers and contact types, heterostructures of semiconducting monolayer gold sulfides and Gr are promising candidates for future-generation nano-devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Graphene/WGe2N4 van der Waals heterostructure: Controllable Schottky barrier by an electric field

XinQi Yuan,Hong Li,JunYan Lu,Kang An,Fengbin Liu,Jing Lu

DOI: https://doi.org/10.1016/j.susc.2024.122450

IF: 1.9

2024-04-01

Surface Science

Abstract:The van der Waals (vdW) heterostructures exhibit excellent promise in nanoelectronics and optoelectronics. We present a novel vdW heterostructure made of graphene and a monolayer (ML) of WGe2N4 and use first-principles calculations to investigate how the Schottky barrier height (SBH) is impacted by an external electric field (Eext). Both component layers retain their fundamental electronic characteristics well due to the weak interfacial interaction. The graphene/WGe2N4 heterojunction is sensitive to E ext. The contact becomes an n-type and p-type ohmic contact at E ext = -0.3 V/Å and 0.6 V/Å, respectively. These findings suggest promising applications of the graphene/WGe2N4 vdW heterostructure in nanoelectronics.

chemistry, physical,physics, condensed matter
Tunable Schottky Barrier in Graphene/graphene-Like Germanium Carbide Van Der Waals Heterostructure

Sake Wang,Jyh-Pin Chou,Chongdan Ren,Hongyu Tian,Jin Yu,Changlong Sun,Yujing Xu,Minglei Sun

DOI: https://doi.org/10.1038/s41598-019-40877-z

IF: 4.6

2019-01-01

Scientific Reports

Abstract:The structural and electronic properties of van der Waals (vdW) heterostructrue constructed by graphene and graphene-like germanium carbide were investigated by computations based on density functional theory with vdW correction. The results showed that the Dirac cone in graphene can be quite well-preserved in the vdW heterostructure. The graphene/graphene-like germanium carbide interface forms a p-type Schottky contact. The p-type Schottky barrier height decreases as the interlayer distance decreases and finally the contact transforms into a p-type Ohmic contact, suggesting that the Schottky barrier can be effectively tuned by changing the interlayer distance in the vdW heterostructure. In addition, it is also possible to modulate the Schottky barrier in the graphene/graphene-like germanium carbide vdW heterostructure by applying a perpendicular electric field. In particular, the positive electric field induces a p-type Ohmic contact, while the negative electric field results in the transition from a p-type to an n-type Schottky contact. Our results demonstrate that controlling the interlayer distance and applying a perpendicular electric field are two promising methods for tuning the electronic properties of the graphene/graphene-like germanium carbide vdW heterostructure, and they can yield dynamic switching among p-type Ohmic contact, p-type Schottky contact, and n-type Schottky contact in a single graphene-based nanoelectronics device.
Tunable Schottky barrier in graphene/XAg 4 Y (X, Y = S, Se, Te) heterostructures

Yujiao Ye,Lei Gao,Yufei Xue,Xiao Fan,Weina Ren,Xuxia Shai,Tingting Wei,Chunhua Zeng,Hua Wang

DOI: https://doi.org/10.1016/j.cjph.2023.05.006

IF: 3.957

2023-05-08

Chinese Journal of Physics

Abstract:Two-dimensional (2D) metal-semiconductor heterostructures have attracted extensive interest in future integrated electronics and energy-related applications. Here, the modulated electronic properties and interface contact of G/XAg 4 Y (X, Y = S, Se, and Te) heterostructures are investigated via first-principles methods. G/XAg 4 Y with G/SAg 4 Y and G/SeAg 4 Y are n-type Schottky contacts whose Φn range from 1.07 to 1.22 eV, while those with G/TeAg 4 Y are p-type Schottky contacts whose Φp range from 1.17 to 1.20 eV. Because of interfacial charge transfer, the n-type Schottky contacts of G/XAg 4 Y with G/SAg 4 Y and G/SeAg 4 Y evolve to p-type Schottky contacts by applying positive external electric fields or reducing the interlayer distances. Oppositely, the p-type Schottky contacts of the G/XAg 4 Y with the G/TeAg 4 Y change to n-type Schottky contacts by applying a negative external electric field or increasing the interlayer distances. These predicted results show that G/XAg 4 Y heterostructures possess interlayer-distance and electric-field dependent Schottky barrier height, which possesses potential in future integrated electronics and energy-related applications. Graphical Because of Fermi level movement and interfacial charge transfer, Schottky barrier heights and contact types can be modulated by vertical strain and external electric field. Download : Download high-res image (273KB) Download : Download full-size image

physics, multidisciplinary
Graphene/GeTe Van Der Waals Heterostructure: Functional Schottky Device with Modulated Schottky Barriers Via External Strain and Electric Field

Xu Gao,Yanqing Shen,Yanyan Ma,Shengyao Wu,Zhongxiang Zhou

DOI: https://doi.org/10.1016/j.commatsci.2019.109200

IF: 3.572

2019-01-01

Computational Materials Science

Abstract:Vertical heterogeneous combinations of two-dimensional (2D) materials have been evident as an effective strategy to design novel photovoltaic and optoelectronic devices. Herein, we perform the first-principles calculations about electronic and optical properties of graphene/GeTe van der Waals heterostructures (vdWHs), accompanied by the efficient modulations about Schottky barriers via an external strain and electric field. A slightly opened band gap of 2.0 meV is obtained for graphene/GeTe vdWH in the equilibrium configuration, and the Dirac point is well preserved at K point. The built-in electric field caused by the charge transfer is devoted to its visible contribution to the efficient hindrance for photoexcited electron-hole pair recombination, consequently increasing the number of carriers and extending their lifetimes. The graphene/GeTe vdWH possesses enhanced optical absorption in the visible region in contrast to the separate GeTe monolayer, indicating its significant potential applications in optoelectronic devices. Besides, the graphene/GeTe vdWH at the equilibrium state exhibits an n-type Schottky contact with n-type Schottky barrier height (SBH) of 0.684 eV. By applying suitable external vertical strains or electric fields, the SBHs can be efficiently tuned, making it of significant possibility to realize the transportations between p-type Schottky contact and n-type Schottky contact, and between Schottky contact and Ohmic contact at the graphene/GeTe interface. These findings together predict the graphene/GeTe vdWH nanocomposite as a competitive candidate in next-generation optoelectronics and Schottky devices.

Tunable electronic properties and Schottky barrier in a graphene/WSe<sub>2</sub> heterostructure under out-of-plane strain and an electric field

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Tunable Schottky Barrier in Graphene/xag4y (X, Y = S, Se, Te) Heterostructures

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Lowering the Schottky Barrier Height of G/WSSe Van Der Waals Heterostructures by Changing the Interlayer Coupling and Applying External Biaxial Strain

Strain engineering on the electronic properties and interface contact of graphene/GeN3 van der Waals heterostructure

Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

Van Der Waals Graphene/mos2 Heterostructures: Tuning the Electronic Properties and Schottky Barrier by Applying a Biaxial Strain

Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

Tunable Schottky Contact in the Graphene/wse2(1−x)o2x Heterostructure by Asymmetric O Doping

Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure

Tuning the Schottky Contacts at the Graphene/Ws2 Interface by Electric Field

Strain Effects on the Schottky Contacts of Graphene and MoSe2 Heterobilayers

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.

Electric Field Tunable Interlayer Relaxation Process and Interlayer Coupling in WSe2/Graphene Heterostructures

Tunable Schottky barriers and electronic properties in van der Waals heterostructures of semiconducting monolayer gold sulfides and graphene

Graphene/WGe2N4 van der Waals heterostructure: Controllable Schottky barrier by an electric field

Tunable Schottky Barrier in Graphene/graphene-Like Germanium Carbide Van Der Waals Heterostructure

Tunable Schottky barrier in graphene/XAg 4 Y (X, Y = S, Se, Te) heterostructures

Graphene/GeTe Van Der Waals Heterostructure: Functional Schottky Device with Modulated Schottky Barriers Via External Strain and Electric Field