Electrical Control of Magnetoresistance in Highly Insulating Co-Doped ZnO

Qingyu Xu,Shengqiang Zhou,Danilo Bürger,Holger Hochmuth,Michael Lorenz,Marius Grundmann,Heidemarie Schmidt
DOI: https://doi.org/10.1143/JJAP.49.043002
IF: 1.5
2010-01-01
Japanese Journal of Applied Physics
Abstract:A Zn(0.96)Co(0.04)O film with low electron concentration (about 1.5 x 10(17) cm(-3) at 21 K) on a highly conducting Zn(0.99)Al(0.01)O layer has been deposited on a-plane sapphire substrate by pulsed laser deposition. To study the magnetoresistance (MR) of depleted, highly insulating Co-doped ZnO an Au ohmic contact and Pd Schottky contact were deposited on the Zn(0.99)Al(0.01)O and Zn(0.96)Co(0.04)O layer, respectively. Positive MR of 30% with a current of 10(-6) A was observed at 5 K. The positive MR decreases drastically at 5 K and changes to negative MR at 50 K with increasing current, which is considered to be due to the bias voltage control of the electron concentration in the Zn(0.96)Co(0.04)O layer. Our work demonstrates the electrically controllable magnetotransport behavior in insulating ZnO-based diluted magnetic semiconductors. (C) 2010 The Japan Society of Applied Physics
What problem does this paper attempt to address?