The Magnetotransport Properties of Co-Doped Zno Films

Qingyu Xu,Lars Hartmann,Heidemarie Schmidt,Holger Hochmuth,Michael Lorenz,Ruediger Schmidt-Grund,Chris Sturm,Daniel Spemann,Marius Grundmann

DOI: https://doi.org/10.1063/1.2730322

2007-01-01

AIP Conference Proceedings

Abstract:Co-doped ZnO films with Co content above 7% have been grown by pulsed laser deposition on a-sapphire substrates. Temperature and magnetic field dependent magneto transport measurements have been performed on samples with electron concentration n around the critical electron concentration n(c)approximate to 4.9x10(19) cm(-3), where the metal-insulator transition (MIT) occurs. At 5 K we observed positive magnetoresistance (MR) in the insulating range (n < n(c)) and negative MR in die metallic range (n > n(c)). The MIT was determined from the NM and Hall effect at 5 K to occur at the electron concentration n(c)approximate to 4x10(19) cm(-3). In the vicinity of the MIT (n similar to n(c)) we observed negative MR at low field and positive MR at high field. Only for n < n(c) we observed clear anomalous Hall effect in the Co-doped ZnO films being of relevance for use in future spintronic devices.