Abstract:In this paper, we report a passively mode-locked Nd∶Y3Sc2Al3O12 (Nd:YSAG) laser using a periodically poled LiNbO3 (PPLN) superlattice. Nonlinear mirror mode locking based on PPLN intracavity frequency doubling was theoretically analyzed. The modulation depth of nonlinear reflectivity of the nonlinear mirror is approximately 8.8%. Optical performances of the modelocked laser including output power, radio frequency spectrum, and optical spectrum were experimentally investigated. An average output power of 710 mW with a slope efficiency of 14.6% was obtained at the pump power of 6.5 W. The repetition rate is 101.7 MHz, and the signal-to-noise ratio of the mode-locked pulse is 45 dB. The mode-locked pulse width was approximately 9 ps.

Diode-pumped Passively Mode-Locked Nd:CLNGG Laser

Diode-pumped Passively Mode-Locked Nd:GYSGG Laser at 1061 Nm with Periodically Poled LiNbO3 Nonlinear Mirror

Diode-pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 Nm with Periodically Poled LiNbO3.

A Diode Pumped Passively Mode-Locked Nd:CaGdAlO4laser

High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

Compact Passively Q-switched Green Laser with Periodically Poled MgO:LiNbO 3

Theoretical Analysis of Periodically Poled LiNbO3 Nonlinear Mirror and Its Application in a Passively Mode-Locked Nd:YSAG Laser

4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO4 laser with a semiconductor saturable-absorber mirror

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror.

Diode-End-Pumped Passively Cw Mode-Locked Nd : Ylf Laser by the Lt-In0.25ga0.75as Absorber

Diode-Pumped Self-Starting Mode-Locked Nd:YVO 4 Laser with Semiconductor Saturable Absorber Output Coupler

LD-pumped 1W Output Nd:GdVO_4 SESAM Mode-locked Laser

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As As Output Coupler

Diode-pumped 88-fs SESAM mode-locked Tm,Ho:CLNGG laser at 2090 nm

2-Ps Passively Mode-Locked Nd : Yvo4 Laser Using an Output-Coupling-Type Semiconductor Saturable Absorber Mirror

Passively mode-locked Nd:Gd0.1Y0.9VO4 laser with a semiconductor saturable absorber mirror

Passively Mode-Locking Nd : Gd0.5y0.5vo4 Laser With An In(0.25)Ga(0.75)Aa Absorber Grown At Low Temperature

Q-switched Mode-Locked Diode-Pumped Nd:YVO4 Laser with a Saturable Bragg Reflector

Passively Mode-Locked Nd:Gd 0.1 Y 0.9 VO 4 Laser with a Semiconductor Saturable Absorber Mirror

Single-passed passively mode-locked Nd:YVO 4 picosecond laser with SESAM