Abstract:A partially-depleted dual-material surrounding-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) structure (DMSG) is proposed to suppress the short channel effect and to increase the current drivability. Two-dimensional analytical models for both surface potential and threshold voltage are respectively presented for the novel structure. The dual-material surrounding gate consists of two metals connecting tightly with different work functions, and it can produce the electric field peak near the source in the channel, decrease the electric field near the drain, and mask the influence of the drain voltage on the minimum surface potential. The potential Poisson equations in the two depleted divisions are given with the boundary conditions in the cylindrical coordinate system. The analytical models are derived based on the solution of the partial differential equations through reducing the dimensions with parabolic potential approximation in the direction vertical to the channel. Numerical simulation and comparisons with the traditional partially depleted device show that the DMSG device increases the carrier transport efficiency, and suppresses the short channel effect, drain-induced barrier lowering effect and hot carrier effect, and that the relative error between the derived analytical model and the numerical simulation software is less than 5%.

2-D Analytical Modeling of Dual Material Gate Fully Depleted Soi Mosfet with High-K Dielectric

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Two-Dimensional Threshold Voltage Analytical Model of Dmg Strained-Silicon-On-Insulator Mosfets

Subthreshold current model of fully depleted dual material gate SOI MOSFET

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Modeling and Simulation of Dual Material Gate (DMG) Structure LDMOS

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Threshold Voltage Analytical Model for Strained Si Soi Mosfet with High-K Dielectric

2D threshold-voltage model for high-k gate-dielectric MOSFETs

Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs.

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A Single-Halo Dual-Material Gate SOI MOSFET

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