ChemInform Abstract: The Epitaxy of CoSi2 on Si Substrates: A Review

Shi-Li Zhang,Francois M. D'Heurle

DOI: https://doi.org/10.1002/chin.200129201

2010-01-01

ChemInform

Abstract:For Abstract see ChemInform Abstract in Full Text.

What problem does this paper attempt to address?

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Xinping Qu,BingZong Li,GuoPing Ru,Zhiguang Cu,Hongtao Xu,Hongxiang Mo,Jing Liu,Chu Paul

1998-01-01

Acta Metallurgica Sinica (English Letters)

Abstract:The effect of amorphous Si layer interposed between Co and Ti on CoSi2/Si heteroepitaxy was studied. Co/Si/Ti/Si multilayer structure was prepared by Ion Beam Sputtering. The solid phase reaction of multilayer was performed by rapid thermal annealing (RTA). The results show that CoSi2 film obtained by Co/Si/Ti/Si solid phase reaction has good epitaxial characteristic, excellent electric properties and thermal stability. It is found that during the low temperature annealing, ternary compound such as Co2Ti4O can be formed. It may act as diffusion barrier which favors the epitaxial growth of CoSi2 film on Si. The addition of an amorphous Si layer can reduce the consumption of the substrate Si during CoSi2 formation while good epitaxial characteristic of CoSi2 on Si is remained.
On the Formation of Epitaxial Cosi2 from the Reaction of Si with A Co/Ti Bilayer

SL ZHANG,J CARDENAS,FM DHEURLE,BG SVENSSON,CS PETERSSON

DOI: https://doi.org/10.1063/1.114182

IF: 4

1995-01-01

Applied Physics Letters

Abstract:In spite of much work, the formation of epitaxial CoSi2 from Ti/Co on (100) Si remains something of a mystery. It has been proposed that epitaxy occurs via the formation of an intermediate phase of CoSi with a (311) preferred orientation. In the absence of sufficient information it is impossible to validate or to invalidate the specific original claim. However, one shows that the formation of preferably oriented CoSi is not a necessary condition for the subsequent growth of epitaxial CoSi2. Careful measurements of diffraction intensities reveal the probable, temporary formation of a metastable form of CoSi2, based on a diamond cubic rather than the usual CaF2 structure.
Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Xinping Qu,Beilei Xu,GuoPing Ru,BingZong Li,Wingyiu Cheung,Saipeng Wong,Paul Chu

2003-01-01

Abstract:Interlayer mediated solid phase epitaxy (IMSPE) is a kind of important method to grow epitaxial CoSi2 films on Si substrates. Since the epitaxy mechanism is still not very clear, it is quite necessary to choose certain interlayer to study its role in epitaxial growth of CoSi2 on Si and the epitaxy mechanism. In this work, carbon is used for interlayer. Four point probe, XRD, AES, RBS are used to analyze the composition, electrical properties and crystallization of the formed film by solid state reaction. The results show that the CoSi2 films with good electrical characteristics and thermal stability can be obtained for Co/C/Si structure after annealing. The C reacts with Co to form Co3C alloy during the reaction which acts as a diffusion barrier, retards the interdiffusion and mutual reaction between Co and Si. This promotes the epitaxial growth of CoSi2 on Si substrates. The role of C interlayer during the epitaxial growth of CoSiz on Si is analyzed.
Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Ping Liu,BingZong Li,Zhen Sun,ZhiGuang Gu,Weining Huang,Zuyao Zhou,RuShan Ni

1994-01-01

Abstract:Epitaxial CoSi2 growth from ternary solid state interaction of Co/Ti/Si was investigated. By a proper multi-step annealing procedure, the epitaxial growth of CoSi2 thin films succeeded on both Si(100) and Si(111) substrates. AES, XRD, TEM and RBS/channeling were employed to characterize the epitaxial CoSi2 films growth. The minimum yield obtained from RBS/channeling measurement for epitaxial CoSi2 films was in the range of 10-14%, that is lower than the values reported in literatures very recently. RBS/channeling measurements performed along the (110) and (114) directions of the Si substrate show that the epitaxial CoSi2 on Si(111) has type B orientation.
Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

ping liu,bingzong li,zhen sun,zhiguang gu,weining huang,zuyao zhou,rushan ni,chenglu lin,shichang zou,feng hong,g a rozgonyi

DOI: https://doi.org/10.1063/1.354824

IF: 2.877

1993-01-01

Journal of Applied Physics

Abstract:Formation of CoSi2 films by the reaction of ternary Co/Ti/Si system has been investigated. Ti and Co films were sequentially deposited on Si substrates by ion beam sputtering. It succeeded in the growth of epitaxial single-crystalline COSi2 films on both Si(111) and Si(100) substrates through a multistep annealing process with temperatures from 550 to 900-degrees-C in a nitrogen environment. A thin layer of TiN was formed on top of the epitaxial CoSi2. The values of Rutherford backscattering spectrometry/channeling minimum yield chi(min) for the epitaxial CoSi2 films were in the range of 10%-14%. The epitaxial CoSi2 grown on Si(111) was found to be composed of type B.
Process and Mechanism of Cosi2/Si Solid Phase Epitaxy by Multilayer Reaction

Li Bing-Zong,Qu Xin-Ping,Ru Guo-Ping,Wang Ning,Chu Paul

DOI: https://doi.org/10.1557/proc-580-117

1999-01-01

Abstract:A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.
The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Xp Qu,Gp Ru,Jh Liu,Hx Mo,J Liu,Bz Li,Pk Chu

DOI: https://doi.org/10.1109/ICSICT.1998.785870

1998-01-01

Abstract:An amorphous Si layer was added for the reduction of Si consumption in the ultra-shallow junctions during the silicide formation. nic present experiments show an epitaxial CoSi2, layer with good single-crystalline quality was grown by Co/ Sii Ti /Si(100) reaction. By varying the thickness of interposed amorphous Si, its affect on the epitaxial CoSi2 growth and self-aligned process was investigated The film structure and crystallinity were characterized by X-ray diffraction (XRD). Rutherford backscattering(RBS) / channeling and transmission electron microscopy (TEM). RBS/C shows that the channeling yield minimum of CoSi2 formed by Co(15nm) /Si(4nm) /Ti(3nm)/Si(100) reaction is 5.2%. It was also demonstrated that within a certain thickness range for the deposited Si, the self-aligned silicide (SALICIDE) contact structure can be formed by such a multilayer.
Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

Cardenas J.,Zhang S.-L.,Svensson B. G.,Petersson C. S.

DOI: https://doi.org/10.1557/proc-402-155

1995-01-01

Abstract:The redistribution of titanium during the growth of epitaxial CoSi2 from the reaction of Co(20nm)/Ti(10nm)/Si<100> structures has been investigated. The concentration of Ti in the CoSi2 layers versus annealing temperature has been determined. Emphasis is placed on the formation of inhomogeneities in the epitaxial CoSi2 layers, and the role of Ti with respect to the thermal stability of the layers. The fundamental mechanism for the development of inhomogeneities in the epitaxial CoSi2 layers will be discussed.
Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

Jun Liu,Jiayou Feng,Jing Zhu

DOI: https://doi.org/10.1016/S0022-0248(00)00596-0

IF: 1.8

2000-01-01

Journal of Crystal Growth

Abstract:Epitaxial CoSi2 films were grown on Si(100) substrates via direct solid-phase reaction between crystalline (002) textured Co films and the Si substrates. Rutherford backscattering/channeling spectrometry and high-resolution transmission electron microscopy were performed to evaluate the epitaxial quality of the CoSi2 films. A good channeling χmin value of 20% was measured for the CoSi2 films formed after rapid thermal annealing at 850°C, which is comparable to that of the CoSi2 films obtained by Ti-interlayer mediated epitaxy (TIME). Similar with TIME, the intermediate phase of Co2Si was skipped in this case. The concept of “thermodynamic barrier” has been employed to explain the improvement in the epitaxy of CoSi2 films compared with the reaction between amorphous Co films and Si substrates.
Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

G Ru

DOI: https://doi.org/10.1016/S1044-5803(02)00252-8

IF: 4.537

2002-01-01

Materials Characterization

Abstract:CoSi2 is a promising material for self-aligned silicide (salicide) applications in sub-0.25 μm complementary metal–oxide–semiconductor (CMOS) technology. In conventional salicide technology, silicides are formed by a solid-state reaction (SSR) after source/drain formation. With the continued scaling down of junction depths, surface and interface roughness of silicides is a growing concern. In this work, a comparative study has been made to investigate the morphology and thermal stability of CoSi2 formed by SSR of different structures, i.e. Co/Si, TiN/Co/Si, Ti/Co/Si, Co/Ti/Si and Ti/Co/Ti/Si. Atomic force microscopy and other techniques were used to characterize the morphology and thermal stability. Compared with the Co/Si reaction, TiN or Ti capping reduces the roughness and improves the thermal stability. The reaction with a Ti interfacial layer shows epitaxial growth of CoSi2 on Si (100). The morphology and thermal stability of epitaxial CoSi2 were significantly improved. The epitaxial CoSi2 may be useful for contact in deep submicrometer CMOS devices.
Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

Xin-Ping Qu,Guo-Ping Ru,Yong-Zhao Han,Bei-Lei Xu,Bing-Zong Li,Paul K. Chu

2001-01-01

Abstract:Epitaxial growth of CoSi 2 by solid state reaction of Co/ a-Si/Ti/Si~100! is investigated. A Ti/ a-Si composite interlayer is used to modify the diffusion barrier and influence the epitaxial growth process. The epitaxial quality of the CoSi 2 is improved compared to the film grown by Co/Ti/Si reaction. A multielement amorphous layer is formed by a solid-state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si while limiting the supply of Co atoms. CoSi 2 grows as the first phase and the growth interface of the epitaxial CoSi 2 is at both the CoSi 2 /Si and CoSi 2 /CoSi interfaces. Investigation of the growth kinetics shows that the activation energy of CoSi 2 formation is larger than that without an amorphous Si layer. © 2001 American Institute of Physics. @DOI: 10.1063/1.1341213 #
Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

s hatzikonstantinidou,peter wikman,shili zhang,c sture petersson

DOI: https://doi.org/10.1063/1.362907

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:The electrical and structural properties of epitaxial CoSi2 layers grown on Si by solid-state interaction between Ti/Co bimetallic layers and Si(100) substrates have been investigated. The Schottky barrier height (SBH) of the CoSi2-Si contact determined by current-voltage characteristics at room temperature varies between 0.64 and 0.71 eV on the n-type substrates and between 0.47 and 0.43 eV on the p-type substrates. The variation of the SBH is found to be related to the Interfacial properties at the CoSi2-Si contact which is in turn determined by the heat treatment used for the CoSi2 formation. The formation of polycrystalline CoSi2 is found to be responsible for the low SBH deviated from 0.71 eV on the n-type substrates and the high SBH deviated from 0.43 eV on the p-type substrates. The formation of a ternary compound, identified as Co16Ti6Si7, within the epitaxial CoSi2 does not seem to affect the SBH on the n-type substrates. A permeable base transistor (PBT) was fabricated using the epitaxial CoSi2 for self-aligned contact metallization. The current-voltage characteristics of the PBTs are presented. (C) 1996 American Institute of Physics.
Epitaxial Growth Of Cosi2 Film By Co/A-Si/Ti/Si(100) Multilayer Solid State Reaction

Xinping Qu,GuoPing Ru,YongZhao Han,Beilei Xu,BingZong Li,Ning Wang,Paul Chu

DOI: https://doi.org/10.1063/1.1341213

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:Epitaxial growth of CoSi2 by solid state reaction of Co/a-Si/Ti/Si(100) is investigated. A Ti/a-Si composite interlayer is used to modify the diffusion barrier and influence the epitaxial growth process. The epitaxial quality of the CoSi2 is improved compared to the film grown by Co/Ti/Si reaction. A multielement amorphous layer is formed by a solid-state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si while limiting the supply of Co atoms. CoSi2 grows as the first phase and the growth interface of the epitaxial CoSi2 is at both the CoSi2/Si and CoSi2/CoSi interfaces. Investigation of the growth kinetics shows that the activation energy of CoSi2 formation is larger than that without an amorphous Si layer. (C) 2001 American Institute of Physics.
Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

P LIU,ZY ZHOU,CL LIN,SC ZOU,RJ ZHANG,BZ LI,PLF HEMMENT

DOI: https://doi.org/10.1016/0168-583x(94)00517-6

1995-01-01

Abstract:Co/Ti bimetallic layers and a TiN capping layer were sequentially deposited on a SIMOX wafer. The influence of the residual oxide on the Si surface was reduced by depositing Ti first. Subsequently an epitaxial CoSi2 film was grown by the interaction of the Co with the Si overlayer of the SIMOX through a multistep anneal in a nitrogen ambient. Both Rutherford backscattering analysis and cross-sectional transmission electron microscopy have shown that a good quality epitaxial growth of CoSi2 with an abrupt interface has been achieved. The interface contained only a few coherent steps which were generated to relax the mismatch strain of the CoSi2 with the Si layer. A minimum channeling yield of 30% was achieved for the epitaxial CoSi2 film. Although the value is higher than that of CoSi2 formed on bulk single-crystalline Si, it is comparatively low for epitaxial CoSi2 growth on the Si(100) overlayer of SIMOX when formed by a solid-phase reaction.
Growth, Electronic Structure and Superconductivity of Ultrathin Epitaxial CoSi2 Films

Yuan Fang,Ding Wang,Peng Li,Hang Su,Tian Le,Yi Wu,Guo-Wei Yang,Hua-Li Zhang,Zhi-Guang Xiao,Yan-Qiu Sun,Si-Yuan Hong,Yan-Wu Xie,Huan-Hua Wang,Chao Cao,Xin Lu,Hui-Qiu Yuan,Yang Liu

DOI: https://doi.org/10.1088/1361-648x/abdff6

2021-01-01

Abstract:We report growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2 films on Si(111). At low coverages, preferred islands with 2, 5 and 6 monolayers height develop, which agrees well with the surface energy calculation. We observe clear quantum well states as a result of electronic confinement and their dispersion agrees well with density functional theory calculations, indicating weak correlation effect despite strong contributions from Co 3d electrons. Ex-situ transport measurements show that superconductivity persists down to at least 10 monolayers, with reduced Tc but largely enhanced upper critical field. Our study opens up the opportunity to study the interplay between quantum confinement, interfacial symmetry breaking and superconductivity in an epitaxial silicide film, which is technologically relevant in microelectronics.
On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates

j cardenas,s l zhang,b g svensson,c s petersson

DOI: https://doi.org/10.1063/1.362884

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si [100] has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 degrees C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. (C) 1996 American Institute of Physics.
Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

XP Qu,GP Ru,BZ Li,Jie-Qin,ZM Jiang,P Chu

DOI: https://doi.org/10.1109/icsict.1998.785871

1998-01-01

Abstract:A new approach to fabricate Si/CoSi/sub 2//Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi/sub 2//Si[100] double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi/sub 2/ surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.
Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

Kukushkin, S. A.,Osipov, A. V.

DOI: https://doi.org/10.1134/S1070363222040028

2022-05-31

Russian Journal of General Chemistry

Abstract:A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main classical methods used at present to grow SiC films on silicon are described. Their advantages and disadvantages are analyzed. The main idea and theory of a new method of synthesizing epitaxial SiC films on silicon are presented. The method is called the method of coordinated substitution of atoms. In the course of coordinated substitution of atoms, the initial lattice of a silicon material with the lattice parameter of 0.543 nm “collapses” into a cubic SiC lattice with the parameter of 0.435 nm. A surprising feature of this method of growing SiC is that an interface layer several nanometers thick with nonstandard optical and electrical properties appears at the SiC/Si interface. The unusual properties are caused by the collapse (shrinkage) of the material with the separation of a new phase of silicon carbide from the silicon matrix. Silicon is subjected to abnormally strong compression. As a result of such shrinkage, every fifth SiC chemical bond becomes fully consistent with every fourth silicon bond, and the remaining bonds are deformed. This leads to a change in the structure of the SiC surface zones adjacent to silicon with its transformation into a “semimetal.” The epitaxy of SiC films on silicon due to the consistent substitution of carbon atoms for half of the silicon atoms in the absence of lattice mismatch dislocations ensures the high crystalline perfection of the SiC films. The review presents experimental data on the growth of a whole family of films and heterostructures of compounds of wide-gap A3B5 and A2B6 semiconductors. The SiC layer on silicon grown by the method of substitution of atoms is shown to be a new and very promising material for spintronics and creation of quantum computer elements.

chemistry, multidisciplinary
Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

HN Zhu,BX Liu

DOI: https://doi.org/10.1088/0022-3727/32/23/101

1999-01-01

Abstract:In this communication, the plain and continuous epitaxial CoSi2 was first synthesized on Si(111) wafers with metal vacuum vapour arc ion implantation without in situ heating or post-annealing. The measurements on the CoSi2 layers showed that increasing the formation temperature and the implantation dose can improve the crystallinity of CoSi2.
Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Ja Switzer,R Liu,Ew Bohannan,F Ernst

DOI: https://doi.org/10.1021/jp0266188

2002-01-01

Abstract:Epitaxial films of cuprous oxide, Cu2O, are electrodeposited from aqueous solution onto single-crystalline Si(001). The epitaxial growth of Cu2O onto Si is an unexpected result, because there is a strong driving force for the oxidation of Si to form a native amorphous SiO2 layer. The Cu2O films are single-crystalline in nature, with little or no fiber texture. High-resolution X-ray diffraction shows that the very large lattice mismatch of -21.4% is reduced to +11.2% by the formation of a Cu2O(001)[100]HSi(001)[110] orientation relationship, in which the film is rotated 45degrees around the common [001] axis. Cross-sectional transmission electron microscopy studies suggest that the growth mechanism involves an initial electroless deposition Of Cu2O epitaxial seeds in direct contact with the Si(001), with the concomitant oxidation of Si to form a layer of amorphous SiO2 about 3 nm thick.. Electrochemical deposition Of Cu2O then proceeds on the epitaxial seeds, with the deposit growing not only perpendicular to the surface, but also laterally across the SiO2 interlayer. This type of lateral overgrowth is used in the production of semiconductor-on-insulator (SOI) structures to avoid defects due to misfit strains.

ChemInform Abstract: The Epitaxy of CoSi2 on Si Substrates: A Review

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

On the Formation of Epitaxial Cosi2 from the Reaction of Si with A Co/Ti Bilayer

Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

Process and Mechanism of Cosi2/Si Solid Phase Epitaxy by Multilayer Reaction

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

Epitaxial Growth Of Cosi2 Film By Co/A-Si/Ti/Si(100) Multilayer Solid State Reaction

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Growth, Electronic Structure and Superconductivity of Ultrathin Epitaxial CoSi2 Films

On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates

Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon