Abstract:InAs1-xSbx is a unique semiconductor as it possesses the lowest bandgap (Eg) of the conventional III–V materials, yielding emission out to nearly 15 μm at room temperature. As such, it is well-suited as the absorber material in long-wavelength infrared (IR) applications such as chemical sensing and large format IR imaging. However, the compositions at the longest wavelengths are significantly lattice-mismatched to conventional substrates. Overcoming this lattice-mismatch requires using thick graded buffers, and to date, little work has focused on the effect of growth conditions on the Sb-incorporation or optical quality of the longest-wavelength InAs1-xSbx materials. Here, the authors investigate the molecular beam epitaxy (MBE) growth of this potential absorber material by using solid source MBE to grow InAs1-xSbx on step-graded buffers on GaSb substrates. The authors have achieved cap-layer compositions as high as x ≈ 0.55 under various substrate temperatures (Tsub) and V/III beam equivalent pressure ratios. By using InAs1-xSbx as the grading material as well as the cap material, the authors can measure Sb-content as a function of growth conditions over many compositions. The author's results show good agreement between x and Eg compared with previous reports, obtaining T = 8 K photoluminescence (PL) emission approaching 11 μm. However, the authors also found that Sb-incorporation falls off for x > 0.2 and worsens with increasing Tsub, suggesting that Sb-incorporation rates increase with reduced adatom mobility. Additionally, the PL of the samples show improved intensity when either Tsub or V/III were increased, while cross-sectional transmission electron microscopy revealed a significant decrease in threading dislocation density with increased V/III. Ultimately, the authors found that under the proper growth conditions, optically active InAs1-xSbx with x over 0.55 can be attained, and with an optimized grading structure, could be a low-cost alternative to HgCdTe for long-wavelength infrared optoelectronics.

Investigation of Antimony for Arsenic Exchange at the Gasb Covered Gaas (001) Surface

A surface and interface study on the InSb/GaAs heterostructures

Chemical Bonding and Electronic Properties of SeS2-treated GaAs(100)

Synchrotron radiation photoemission study of S2Cl2-treated GaAs(100) surfaces

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Investigation of Neutralized (nh4)(2)s Solution Passivation of Gaas (100) Surfaces

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Antimony‐Rich GaAs x Sb 1− x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors

Quantum Chemical Study of Adsorption and Dissociation of H2S on the Gallium-Rich GaAs (001)-4 × 2 Surface

SURFACE RECONSTRUCTION OF GaSb(lOO)

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

Tuneable 2D surface Bismuth incorporation on InAs nanosheets

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Surfactant Antimony enhanced Indium incorporation on InGaN (000-1) surface: a DFT study

High resolution X-ray diffraction study in InAs/GaSb superlattice

Antimony arsenide: Chemical ordering in the compound SbAs

Adhesion-free Bridgman growth of AlSb