The behavior of SrBi2Ta2O9 thin films as memory cells under applied stress

Xiaomei Lü,Jingsong Zhu,Xuesong Zhang,Di Wu,Zhiguo Liu,Yenning Wang
DOI: https://doi.org/10.1080/10584580108215677
2006-01-01
Integrated Ferroelectrics
Abstract:Abstract The effect of stress on the physical properties of SBT thin films has been investigated. Both Remnant polarization (Pr) and spontaneous polarization (Ps) increase with the application of tensile stress, while decrease with the application of compressive stress. And the variation of Pr increase with the maximum testing voltage in the range 3–12V. The fatigue testing shows that a large voltage cycling before testing and the applied stress are both helpful to preventing the polarization suppression, and the result is explained by the coarsening of domaias. The stress about 100Mpa seems to have no observable destructive effect on the SBT thin films.
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