Abstract:This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al 2 O 3 as the gate dielectric layer. The proposed device reveals a threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) of +2.3 V and a maximum drain current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{D, \text {max}}$ </tex-math></inline-formula> ) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/ OFF-state current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{ \scriptscriptstyle {\text {ON}}}}}/{I}_{ {{ \scriptscriptstyle {\text {OFF}}}}}$ </tex-math></inline-formula> ) ratio of 10 9 –10 10 , a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{A}$ </tex-math></inline-formula> /mm while keeping a low-specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ {{ \scriptscriptstyle {\text {ON}}}}, \text {sp}}$ </tex-math></inline-formula> ) of 1.04 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text {cm}^{\text {2}}$ </tex-math></inline-formula> . This novel E-mode device presents a great potential for power device applications.

Enhancement-Mode Inaln/Gan Mishemt with Low Gate Leakage Current

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With A/mm Leakage Current and ON/OFF Current Ratio

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs with 626 MW/<inline-formula> &Lt;tex-Math Notation="latex">$\mathrm{cm}^{2}$ &Lt;/tex-Math></inline-formula> Figure of Merit

Enhancement-Mode Inp N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Al2o3 Dielectrics

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET with Maximum Drain Current Exceeding 1 A/mm

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon with Schottky Tri-Drain Extension

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited <formula formulatype="inline"><tex>$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> as Gate Dielectric

823-Ma/mm Drain Current Density and 945-Mw/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs with a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

Design of Enhancement Mode β-Ga2O3 Vertical Current Aperture MOSFETs With a Trench Gate

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application