Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Characteristic Analysis Of Nanosilicon Rectangular Waveguides For Planar Light-Wave Circuits Of High Integration

Light Propagation in Curved Silver Nanowire Plasmonic Waveguides.

Characteristic Analysis of Diffraction from Planar Waveguide

Study on Properties of Silicon Nano-Slab Waveguides

Reference Wave Source Based on Silicon Nitride Waveguide in Point Diffraction Interferometer

Comparative study of the integration density for passive linear planar light-wave circuits based on three different kinds of nanophotonic waveguide.

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Characterization of Planar Hybrid Dielectric-Loaded Plasmonic Nano-Waveguides Used for Nano-Photonic Circuits

Waveguides Used for Nano- Photonic Circuits

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Optical Performance Of Single-Mode Hybrid Dielectric-Loaded Plasmonic Waveguide-Based Components

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Highly Integrated Planar Lightwave Circuits Based on Plasmonic and Si Nano-Waveguides

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Analysis of silicon nitride partial Euler waveguide bends

Ultra-low-loss High-Aspect-ratio Si3N4 Waveguides.