Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.
Lin Chang,Martin H. P. Pfeiffer,Nicolas Volet,Michael Zervas,Jon D. Peters,Costanza L. Manganelli,Eric J. Stanton,Yifei Li,Tobias J. Kippenberg,John E. Bowers
DOI: https://doi.org/10.1364/ol.42.000803
IF: 3.6
2017-01-01
Optics Letters
Abstract:An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.