Abstract:This study deals with the Nb–niobium silicide-based composites developed by the hot-pressing of Nb–Si–Ti ternary powder mixtures with a fixed Ti addition (6at.%) and Si content ranging from hypereutectic (11at.%) to near-eutectic compositions (18at.%). The effects of Si content, Ti addition and strain rates on the sample microstructural characterization, flexural strength, fracture toughness, quasi-static compressive deformation and failure processes were investigated. It was revealed that the volume fraction of silicides increased with increasing Si content, and most of the Ti atoms dissolved into the niobium silicides to form (Nb,Ti)5Si3 solid solutions instead of binary titanium silicides. The experimental evidence showed that a moderate improvement in the flexural strength, fracture toughness and compressive yield stress of the composites was achieved by the addition of Ti. Higher Si additions produced a much more remarkable enhancement in the compressive yield stress and bulk hardness, whereas both the flexural strength and fracture toughness decreased with increasing Si content owing to the existence of residual porosities in the samples. The composites showed remarkable superiority to the arc-melted Nb–Si alloys and monolithic niobium silicides in fracture toughness (8.3–13.0MPam vs. 4.5MPam), where the toughening effect was attributed mainly to crack bridging and crack deflection by the remaining ductile Nb phase. Moreover, quasi-static uniaxial compression tests at strain rates between 10–5 and 10–3s−1 indicated that the deformation behavior and failure processes were significantly affected by Si content and strain rates. The strain-rate-hardening behavior for all the strain rates was observed in the composite materials and the strain-rate sensitivity decreased with increasing Si content. At a lower strain rate, the composite materials with a hypoeutectic Si composition failed with a pseudoplastic response and at an angle of ∼45° off the compressive loading direction. However, in the case of higher strain rate and Si content, the brittle failure in the samples occurred through vertical splitting and spalling of fragments.

Characterization of A New Nb-Silicide (-Nb11si4) in Nb-Si Binary Systems

Prediction of New Structure, Phase Transition, Mechanical, and Thermodynamic Properties of Nb3Si

Analyses of Eutectoid Phase Transformations in Nb–Silicide In Situ Composites

Phase Formation and Resistivity in the Ternary System Ti–Nb–Si

Phase equilibria of the Nb–Si-Gd ternary system at 1273 K

Experimental Investigation of Phase Equilibria in the Nb-Si-V Ternary System

Atomic models of the structure of niobium silicides in Nb–Si in situ composites

Atomic structure of intermetallic compound Nb5Si3by new cluster transformation analysis method

Structural, electronic properties and boron stability of (001) surface of Nb5Si3 intermetallic by first-principles calculations

A New Type of Compositionally Complex M5Si3 Silicides: Cation Ordering and Unexpected Phase Stability

Atomic layer deposition and superconducting properties of NbSi films

A High-Entropy Silicide: (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2

Discovery of Superconductivity in Nb$_4$SiSb$_2$ with a V$_4$SiSb$_2$-Type Structure and Implications of Interstitial Doping on its Physical Properties

Thermodynamic Reassessment of the C-Ni-Si System Using a Four Sublattice Model for Ordered/Disordered fcc Phases

The structural, mechanical and electronic properties of NbXSi (X=Fe, Co, Ni, Ru, Rh, Pd, Os, Ir and Pt) compounds from first-principles calculations

Ordering transformation in Nb 0.8 CoSb induced by in situ heating-induced Nb diffusion

Synthesis and Structure of Quasi-One-Dimensional Niobium Tetrasulfide NbS4

Scanning the latent phases and superconductivity in the Nb-Pb system at high pressure

Microstructural and mechanical characterization of Nb-based in situ composites from Nb–Si–Ti ternary system

Scanning Intrinsic Superconductivity and the Spin Hall Effect in Niobium Borides

Crystallization of Nisix in A Body-Centered Cubic Structure During Solid-State Reaction Between an Ultrathin Ni Film and Si(001) Substrate at 150-350 Degrees C