A Summary on the Concepts and Design of Fast Recovery Diodes

张斌,黄新,陈思敏

2008-01-01

Abstract:This paper produces the reverse recovery features and the mechanism analyses of fast recovery diodes.The life time control technology,structures design and their principle,and the typical design examples for fast recovery diodes are discussed.

What problem does this paper attempt to address?

The Reviews and Status of Fast Recovery Diodes

张斌

2010-01-01

Abstract:There are many significant and efficient technologies for improved the reverse recovery speed and the softness of fast recovery diodes(FRD).This paper provides the reviews and status of the FRDs that is matched with the modern power semiconductors IGBTs and power MOSFETs.The essential hardware conditions for FRDs manufactures are discussed for the SCRs manufactures to be interested in these.
Design and Emulate of Fast and Soft-Recovery Diode

张海涛,张斌

DOI: https://doi.org/10.3969/j.issn.1003-353x.2002.06.025

2002-01-01

Abstract:The working principle and the parameters of fast and soft-recovery diode are discussed.Through the design of a software named SILVACO, we can use the parameters in making the diodes.
Research on Fast Recovery Diodes Typed ZK1105/4500

Yong-zhong GUO,Fei-niao WU,Rui-tao WANG,Yu-ling LI

DOI: https://doi.org/10.3969/j.issn.1000-100x.2006.05.046

2006-01-01

Abstract:Fast recovery diodes typed ZK1150-45 with 4500V reverse blocking voltage,1150A forward current and 6μs recovery time are designed and fabricated.In a PIN structure,detail analysis are made to reduce leakage current,volt-age drop,recovery time and to increase blocking voltage and forward current.It is showed that for so high electrical perfor-mance diode,N-substrate parameters must be determined critically.Double-beveled junction termination is studied by a laser beam OBIC(Optical-beam-induced Current) method.Taking influences of interface state between silicon and passi-vation material in count,depletion layer spread and electric field concentration are measured and observed directly.The shortest N-substrate is reached,which makes the best compromise among requirements from different electrical parameters.A special diffusion process for excellent P and N type impurity profile simultaneously has been found and put into production.Re-peated electron irradiations with 12MeV,100μA beam are applied to the chips before housing,and make the carrier life-time being controlled uniformly.In this way,an efficient and reliable process flow with high yield is achieved.
Fast Recovery Diode Model for Circuit Simulation of High Voltage High Power Three Level Converters

Rong Yi,Zhengming Zhao,Liqiang Yuan

DOI: https://doi.org/10.3321/j.issn:1000-6753.2008.07.011

2008-01-01

Abstract:Fast recovery diode of high power converter was investigated. A novel hybrid fast recovery diode model combined lump charge model and functional model was developed. In the model, the reverse recovery was described by four phases and "inductive effect" was included in the forward recovery. The model was implemented with the circuit simulation software PSIM. The simulation results are consistent with the ratings of product and experimental results, which proves that the model is able to predict forward and reverse recovery process of diode.
Freewheeling diode reverse-recovery failure modes in IGBT applications

M.T. Rahimo,N.Y.A. Shammas

DOI: https://doi.org/10.1109/28.913734

IF: 4.079

2001-01-01

IEEE Transactions on Industry Applications

Abstract:In this paper, reverse-recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching occur during the recovery period in modern high-frequency power electronic applications. The work presented here confirms that the reverse-recovery process can by expressed by means of diode capacitance effects which influence the reverse-recovery characteristics. The paper also shows that the control of the carrier gradient and the remaining stored charge in the drift region during the recovery phase influence both failure modes and determine if the diode exhibits soft, snappy, or dynamic avalanche recovery characteristics.

engineering, electrical & electronic, multidisciplinary
Application of SiC diode in high frequency and high power current inverter

Shuai WANG,Tian-xia ZHAN,Ye FENG,Hui-ming CHEN

DOI: https://doi.org/10.3969/j.issn.1001-4551.2017.06.025

2017-01-01

Abstract:Aiming at the problem that the switching loss of the current-mode inverter was larger when the bridge arm was expanded in paral-lel. The forward and reverse recovery characteristics of SiC Schottky diodes and Si fast recovery diodes, the parallel current sharing of MOS-FET and the working process of current inverters were studied respectively. Then the replacement of Si fast recovery diode with SiC Schottky diode in the inverter to maintain good inverter parallel current sharing effect while reducing inverter losses was proposed. At last current-based inverter experimental platforms based on Si fast recovery diode and SiC Schottky diode were built respectively to verify the actual per-formance of SiC Schottky diode in system expansion. The results indicate that the use of SiC Schottky diodes in current-mode inverters can achieve good parallel current sharing effect while greatly reducing inverter losses and improve inverter efficiency.
Si MPS with CIBH Structure for Fast Recovery Applications

Hongming Ma,Yan Wang

DOI: https://doi.org/10.1109/icicdt51558.2021.9626467

2021-01-01

Abstract:In this paper, a new fast recovery diode concept realizing low reverse recovery time, high dynamic ruggedness and good trade-off between dynamic and static characteristics is proposed. Controlled injection of backside holes (CIBH) structure is implemented at the cathode of merged PIN/Schottky (MPS) diode, which can reduce the cathode injection efficiency during on-state and suppress the fast extraction of carriers during reverse recovery process. Through Sentaurus TCAD simulation, the proposed structure achieved a reverse recovery time of 36ns and a reverse recovery peak current density of 325.2A/cm2 at the reverse voltage of 200V and the forward current density of 100A/cm2, which is improved by 42.9% and 35.7% compared with the MPS diode. Moreover, in oscillation test, the oscillation time and voltage amplitude are optimized by 50% and 37.3% respectively compared with MPS diode.
New Design of Clock Self Recovery Circuit Based on Time-to-voltage Conversion

Yu Changhong,Li Peihong,Liu Jilin

DOI: https://doi.org/10.13382/j.jemi.2008.02.005

2008-01-01

JOURNAL OF ELECTRONIC MEASUREMENT AND INSTRUMENT

Abstract:A totally new architecture for clock recovery is delivered in the article.Very simple circuit is designed for time-to-voltage conversion,which transforms time error into voltage error.It is very convenient to use the transformed voltage for error detection.The voltage is processed by a self-adaptive peak value capture circuit to realize voltage comparison and clock self-recovery.The circuit is designed with SMIC 0.18μm process lib.Systemic circuit simulation was carried out and experiment results indicate that the designed circuit can work within a wide band of 50MHz to 150MHz,which meets the requirement of clock recovery in a VLSI system design.
Modeling diode reverse recovery and corresponding implementation in fast time-domain simulation

Hao Wang,Jinjun Liu,Runxin Wang,Qinsan Hou

DOI: https://doi.org/10.1109/ICPE.2007.4692510

2008-01-01

Abstract:Existing power diode models in most time-domain circuit simulators cannot accurately present the reverse recovery characteristics of actual diode devices with fast simulation speed. Ma-Lauritzen model is a relatively simple solution for modeling the reverse recovery of diode with reasonable accuracy but so far little result has been reported on the methodology and process for applications in circuit simulators. Based on Ma-Lauritzen model, this paper proposes a configuration and implementation methodology for building diode models with reverse recovery characteristics in an ordinary time-domain circuit simulator like SIMPLIS. A silicon power diode 8ETX06 is selected for simulation speed and accuracy evaluation regarding the proposed modeling methodology and implementation approach. Furthermore, simulation and hardware test results on a switching power converter are shown to verify that the diode model following the proposed building method is reasonably accurate and fast in dynamic waveform emulation and component stress estimation for the reverse recovery process.
Reverse Recovery Time Characteristics of High Power Thyristors

Ke Yue,Shaobin Li,Dezhi Kong,Haoyang You,Lei Pang,Qiaogen Zhang,Longchen Liu

DOI: https://doi.org/10.1109/ichve.2016.7800740

2016-01-01

Abstract:The reverse recovery characteristics of the high power thyristor becomes increasing important to the converter valve designers as commutation failure often occurs in its reverse recovery process. Therefore, the recovery protection of converter valve is provided by thyristor control unit. The design of thyristor control unit is associated with the relationship between reverse recovery characteristics and external operating conditions. In this paper, the thyristor reverse recovery characteristics has been investigated to determine the reverse recovery time based on analyzing and testing the reverse recovery process of thyristor. Various types of recovery as well as some important circuit influences on the recovery characteristics of high power thyristors are considered. The effects of peak current during conduction, conduction pulse width, and snubber circuit are presented. Thereafter, the influences of thyristor reverse recovery time on the design of thyristor control unit have been investigated.
Comprehensive Analysis and Experiments of RB-IGCT, IGCT with Fast Recovery Diode and Standard Recovery Diode in Hybrid Line Commutated Converter for Commutation Failure Mitigation

Chaoqun Xu,Zhanqing Yu,Zhengyu Chen,Biao Zhao,Zongze Wang,Chunpin Ren,Rong Zeng

DOI: https://doi.org/10.1109/tie.2022.3158019

IF: 7.7

2023-01-01

IEEE Transactions on Industrial Electronics

Abstract:Commutation failure is one of the most important factors threatening the safety of multi-infeed high voltage direct current systems. To mitigate commutation failure, we have proposed a novel hybrid line-commutated converter by adding fully controlled devices to the conventional line-commutated converter. It aims to achieve auxiliary commutation and forced commutation with the help of fully controlled devices. Based on the novel hybrid line-commutated converter topology, the study investigates how to select suitable fully controlled devices and how to design the appropriate parameters of the devices. First, this article studied the general characteristics of reverse-blocking devices, including reverse-blocking integrated gate-commutated thyristor (RB-IGCT) and asymmetrical IGCT with diode (including fast recovery diode and standard recovery diode). Then, the novel commutation principle is carefully proposed and analyzed. The comprehensive simulation results and comparison study of the novel commutation principle are conducted. Then, according to the proposed commutation principle, the voltage and current working stress of devices are illustrated. According to these, vital features of devices, including recovery speed, on -state voltage, current conduction ability, surge current, maximum turn- off current, robustness, and volume of devices, are carefully analyzed and compared. Related experiments are conducted to present the vital characteristics of devices in the equivalent operating conditions in converters. Finally, the advantages and disadvantages of RB-IGCT and IGCT with fast recovery diode and standard recovery diode are comprehensively presented, which offers valuable reference considered in engineering applications.
Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-Kv High-Voltage DC Breaker

Xiangyu Zhang,Zhanqing Yu,Zhengyu Chen,Biao Zhao,Rong Zeng

DOI: https://doi.org/10.1109/tpel.2019.2930739

IF: 5.967

2019-01-01

IEEE Transactions on Power Electronics

Abstract:At present, it is usually necessary to use fast recovery type diodes to cooperate with the fast switching actions of fully controlled devices such as insulated-gate bipolar transistors (IGBTs). However, the specific nature of the working conditions of the diode-bridge bidirectional solid-state switch (DBSS) provides an opportunity to apply standard recovery diodes for this purpose, which helps to reduce the cost of the bidirectional switch. This letter presents the self-oscillation phenomenon that is caused by the recovery processes of the diodes in a DBSS. Then, the recovery effects of these diodes in different topologies are analyzed from the perspective of the DBSS and optimized designs for both the snubber circuit and the energy-absorbing circuit are proposed. A 500-kV dc breaker is realized based on the proposed DBBS using the standard recovery diodes, which can work reliably with IGBTs, and the cost of the resulting dc circuit breakers is greatly reduced.
Modeling of High-Voltage Nonpunch-Through PIN Diode Snappy Reverse Recovery and Its Optimal Suppression Method Based on RC Snubber Circuit

Xin Li,Fei Xiao,Yifei Luo,Ruitian Wang,Yaoqiang Duan

DOI: https://doi.org/10.1109/tie.2021.3094483

IF: 7.7

2022-06-01

IEEE Transactions on Industrial Electronics

Abstract:The snappy reverse recovery (SRR) and failure of high-voltage nonpunch-through (NPT) PIN diodes under extreme working conditions are of great significance to the reliability evaluation of operating diodes in actual power electronic devices. In this article, the analysis of the physical mechanism of the diode SRR and the restrictions of the traditional PT-PIN diode model are made. Then, the traditional model for soft recovery is improved in order to accurately describe the diode SRR characteristics. Simulations of key dynamic performances of the established model agree well with the experimental results. Furthermore, a suppression method for diode SRR based on the optimal RC snubber circuit is proposed. A high-voltage NPT-PIN diode used in the dcdc converter with different RC snubber circuits is simulated using the proposed diode snappy model and tested. The comparison results show good consistency between the simulated and measured voltage and current peaks and the diode SRR are suppressed effectively. The developed model and results are of much importance to the prediction of the safe operation area of the diode and to the reliability improvement of power electronic device.

automation & control systems,engineering, electrical & electronic,instruments & instrumentation
Optimisation of Local Lifetime Control in High Power Diode

XL Yuan,F Udrea,L Coulbeck,P Waind,G Amaratunga

DOI: https://doi.org/10.1109/pcc.2002.998552

2002-01-01

Abstract:This paper discusses the effectiveness of the lifetime control technology in high-voltage diodes. A comprehensive study of the static and dynamic performance of diodes using lifetime control technology in comparison with diodes using other techniques is made. We show for the first time that the optimum reduced lifetime region is not always at the anode p-n junction. The optimisation of the location depends on the current decreasing rate di/dt and other device parameters such as the lifetime in the whole n-drift region. We also show that the double irradiation is the most effective method among all the techniques and the optimisation of the second implantation energy is the key to achieve a reduced reverse current peak and a soft recovery
Analysis on Reverse Recovery Characteristic of SiC MOSFET Intrinsic Diode

Zhaohui Wang,Jiajia Ouyang,Junming Zhang,Xinke Wu,Kuang Sheng

DOI: https://doi.org/10.1109/ecce.2014.6953782

2014-01-01

Abstract:Different from IGBT, SiC MOSFET can operate as synchronous rectifier with low on resistance, thus the intrinsic diode only work during the dead time. To utilize the intrinsic diode as freewheeling diode, the reverse recovery characteristic is analyzed and discussed in this paper. Four operating conditions, i.e. turn-off voltage, forward current, current commutating slope and junction temperature, are considered to evaluate the turn-off performance of SiC MOSFET intrinsic diode. To test the device and minimize the stray inductance, a double pulse test bench based on direct bond copper substrate and bare dies is designed. The reverse recovery feature of two kinds of silicon p-i-n diode is also tested for comparison. The experimental results show that the intrinsic diode is sensitive to the junction temperature and the performance gets worse at high temperature, but still much better than silicon p-i-n diode.
Theory Analysis of trr-T Characteristic of Fast Recover Diode with MLD Structure

潘飞蹊,陈星弼

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.01.026

2005-01-01

Abstract:The fast recover diode with minority-carrier lifetime lateral non-uniform distribution (MLD) structure is analyzed theoretically. Based on the minority lateral distribution in the n-type base region of the MLD diode, an explanation of the recover time-temperature (trr-T) stability which can be improved by the MLD structure is given. The stability is also discussed by the concept of average-lifetime. Furthermore, the simulation results verify the correctness of the theory analysis.
A new model of step recovery diode for CAD

Zhang, J.,Raisanen, A.

DOI: https://doi.org/10.1109/MWSYM.1995.406248

1995-01-01

Abstract:A new step recovery diode (SRD) model for CAD is developed by considering the voltage ramp in the SRD and using a DC measurement to extract a model parameter. This model can be directly used in commercial circuit simulators for designs of SRD circuits. Examples of using this model to analyse a comb generator and a frequency multiplier are given.<>
The Modelling of P-I-N Power Diode with Reverse Recovery

Yunqing Pei,Zhao'an Wang,Ise Toshifumi

DOI: https://doi.org/10.3321/j.issn:0253-987X.1999.06.002

1999-01-01

Abstract:A Simple model is presented for a power diode with reverse recovery. The effects of emitter and Auger recombination are involved by considering varied lifetime. Computer aided design software FECS (Power Electronic Circuit Simulation) is used to in improve the accuracy of the result. Simulation are made in many devices to verify the accuracy of the model.
Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

Shaowen Han,Shu Yang,Rui Li,Xinke Wu,Kuang Sheng

DOI: https://doi.org/10.1109/tpel.2018.2876444

IF: 5.967

2019-06-01

IEEE Transactions on Power Electronics

Abstract:The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic on-resistance ($R_{text{ON}}$) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low $R_{text{ON}}$·$Q_{rm rr}$ figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic $R_{text{ON}}$ degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: off-state stress bias up to 500 V, off-state stress time within 10<sup>−6</sup>–10<sup>2</sup> s, high temperature up to 150 °C, and different load current levels.

engineering, electrical & electronic
A Fast LVDC Vacuum Hybrid Circuit Breaker: Dielectric Recovery and Design Consideration

Siqi Liu,Pengfei Hu,Daozhuo Jiang,Yiqiao Liang,Jinwu Zhuang

DOI: https://doi.org/10.1049/gtd2.12241

2021-01-01

Abstract:Aiming at the fast protection requirements of electrical ships LVDC distribution system, this paper studies a topology of unidirectional vacuum hybrid circuit breaker. The hybrid circuit breaker is an improved current injection LVDC breaker based on precharged capacitor, which improves the dielectric recovery capability of vacuum interrupter after artificial current zero by using a freewheel diode. A synthetic test platform is built to study the dielectric strength recovery characteristics of a 45 mm diameter CuCr50 butt contact vacuum interrupter (driven by Thomson coil actuator, average opening speed of about 3 m/s)under high current(about 20 kA) and small gap(about 1 mm). The experimental results indicate that the dielectric strength of the contact can recover at a very fast speed within the arc time of 100 mu s; when the arc time is increased to 320 mu s, the dielectric strength of the contact cannot recover for a long time. Therefore, the design principle of the circuit breaker is obtained: within the arc time of 100 mu s, by increasing the arc time can increase the contact distance, so the transient interruption voltage tolerance margin of the circuit breaker can be improved. Based on the results of the test, this paper also proposes a calculation method of forced commutation circuit parameters, which is verified by the simulation. The research results show that the DC circuit breaker can realise the rapid breaking of 20 kA fault current within 2 ms, and has a good application prospect in the LVDC distribution system.

A Summary on the Concepts and Design of Fast Recovery Diodes

The Reviews and Status of Fast Recovery Diodes

Design and Emulate of Fast and Soft-Recovery Diode

Research on Fast Recovery Diodes Typed ZK1105/4500

Fast Recovery Diode Model for Circuit Simulation of High Voltage High Power Three Level Converters

Freewheeling diode reverse-recovery failure modes in IGBT applications

Application of SiC diode in high frequency and high power current inverter

Si MPS with CIBH Structure for Fast Recovery Applications

New Design of Clock Self Recovery Circuit Based on Time-to-voltage Conversion

Modeling diode reverse recovery and corresponding implementation in fast time-domain simulation

Reverse Recovery Time Characteristics of High Power Thyristors

Comprehensive Analysis and Experiments of RB-IGCT, IGCT with Fast Recovery Diode and Standard Recovery Diode in Hybrid Line Commutated Converter for Commutation Failure Mitigation

Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-Kv High-Voltage DC Breaker

Modeling of High-Voltage Nonpunch-Through PIN Diode Snappy Reverse Recovery and Its Optimal Suppression Method Based on RC Snubber Circuit

Optimisation of Local Lifetime Control in High Power Diode

Analysis on Reverse Recovery Characteristic of SiC MOSFET Intrinsic Diode

Theory Analysis of trr-T Characteristic of Fast Recover Diode with MLD Structure

A new model of step recovery diode for CAD

The Modelling of P-I-N Power Diode with Reverse Recovery

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

A Fast LVDC Vacuum Hybrid Circuit Breaker: Dielectric Recovery and Design Consideration