Design and Emulate of Fast and Soft-Recovery Diode

张海涛,张斌

DOI: https://doi.org/10.3969/j.issn.1003-353x.2002.06.025

2002-01-01

Abstract:The working principle and the parameters of fast and soft-recovery diode are discussed.Through the design of a software named SILVACO, we can use the parameters in making the diodes.

What problem does this paper attempt to address?

A Summary on the Concepts and Design of Fast Recovery Diodes

张斌,黄新,陈思敏

2008-01-01

Abstract:This paper produces the reverse recovery features and the mechanism analyses of fast recovery diodes.The life time control technology,structures design and their principle,and the typical design examples for fast recovery diodes are discussed.
Fast Recovery Diode Model for Circuit Simulation of High Voltage High Power Three Level Converters

Rong Yi,Zhengming Zhao,Liqiang Yuan

DOI: https://doi.org/10.3321/j.issn:1000-6753.2008.07.011

2008-01-01

Abstract:Fast recovery diode of high power converter was investigated. A novel hybrid fast recovery diode model combined lump charge model and functional model was developed. In the model, the reverse recovery was described by four phases and "inductive effect" was included in the forward recovery. The model was implemented with the circuit simulation software PSIM. The simulation results are consistent with the ratings of product and experimental results, which proves that the model is able to predict forward and reverse recovery process of diode.
A High Efficiency Soft Switching Three-phase Grid-connected Inverter

LI Rui,MA Zhiyuan,XU Dehong

2011-01-01

Abstract:A three-phase grid-connected inverter with high efficiency soft switching is proposed,which uses only one auxiliary switch and can realize zero voltage switching(ZVS) operation for all switching devices,as well as can suppress the anti-parallel diode reverse recovery voltage.Space vector modulation(SVM) strategy can be adopted for this inverter with the main and auxiliary switching devices operating at the fixed and same switching frequency.The soft switching process of this inverter is analyzed,and the design procedure for resonance parameters is described.A 20 kW prototype is built to verify the theory,and efficiency of the inverter with full load can attain to 98%.
A Novel 40 Kw Soft Switching Three-phase Pulse Width Modulation Rectifier

李睿,马智远,徐德鸿

DOI: https://doi.org/10.13334/j.0258-8013.pcsee.2011.33.012

2011-01-01

Abstract:In three-phase power factor correction converter, there exists severe switching loss. A zero voltage switching three-phase boost rectifier was researched. It used only one auxiliary switch and could realize zero voltage switching for all the switches and suppressed the diode reverse recovery current. The soft switching condition was analyzed and the design guide was proposed. The conduction loss and switching loss of the rectifier was calculated and the control strategy of the rectifier under unbalanced grid voltage condition was designed. A DSP controlled 40kW prototype was built to verify the theory.
The Reviews and Status of Fast Recovery Diodes

张斌

2010-01-01

Abstract:There are many significant and efficient technologies for improved the reverse recovery speed and the softness of fast recovery diodes(FRD).This paper provides the reviews and status of the FRDs that is matched with the modern power semiconductors IGBTs and power MOSFETs.The essential hardware conditions for FRDs manufactures are discussed for the SCRs manufactures to be interested in these.
Application of SiC diode in high frequency and high power current inverter

Shuai WANG,Tian-xia ZHAN,Ye FENG,Hui-ming CHEN

DOI: https://doi.org/10.3969/j.issn.1001-4551.2017.06.025

2017-01-01

Abstract:Aiming at the problem that the switching loss of the current-mode inverter was larger when the bridge arm was expanded in paral-lel. The forward and reverse recovery characteristics of SiC Schottky diodes and Si fast recovery diodes, the parallel current sharing of MOS-FET and the working process of current inverters were studied respectively. Then the replacement of Si fast recovery diode with SiC Schottky diode in the inverter to maintain good inverter parallel current sharing effect while reducing inverter losses was proposed. At last current-based inverter experimental platforms based on Si fast recovery diode and SiC Schottky diode were built respectively to verify the actual per-formance of SiC Schottky diode in system expansion. The results indicate that the use of SiC Schottky diodes in current-mode inverters can achieve good parallel current sharing effect while greatly reducing inverter losses and improve inverter efficiency.
Modeling diode reverse recovery and corresponding implementation in fast time-domain simulation

Hao Wang,Jinjun Liu,Runxin Wang,Qinsan Hou

DOI: https://doi.org/10.1109/ICPE.2007.4692510

2008-01-01

Abstract:Existing power diode models in most time-domain circuit simulators cannot accurately present the reverse recovery characteristics of actual diode devices with fast simulation speed. Ma-Lauritzen model is a relatively simple solution for modeling the reverse recovery of diode with reasonable accuracy but so far little result has been reported on the methodology and process for applications in circuit simulators. Based on Ma-Lauritzen model, this paper proposes a configuration and implementation methodology for building diode models with reverse recovery characteristics in an ordinary time-domain circuit simulator like SIMPLIS. A silicon power diode 8ETX06 is selected for simulation speed and accuracy evaluation regarding the proposed modeling methodology and implementation approach. Furthermore, simulation and hardware test results on a switching power converter are shown to verify that the diode model following the proposed building method is reasonably accurate and fast in dynamic waveform emulation and component stress estimation for the reverse recovery process.
Soft switching characteristics of a novel and efficient DC/DC converter

LIU Guo-qiang,PANG Jin-yong,XIE Yu,WANG Zheng-shi,SU Xiu-rong

DOI: https://doi.org/10.3969/j.issn.1001-4551.2013.05.022

2013-01-01

Abstract:Aiming at solving the problems of magnetic bias that may exist,large current stress,poor soft switching performance and duty cycle loss of phase-shift full-bridge circuit,a novel circuit topology that combines Boost circuit,phase-shift full-bridge circuit and resonant circuit was proposed.The working principles of the circuit were described firstly,and then the key waveform diagram of the circuit was given.A detailed study focusing on the conditions to achieve soft switching on the basis of working status and mathematical models with fundamental component method was made,and the design method to realize the soft switching of the novel DC/DC converter was given.The existing problems were studied and solutions were proposed.A 1 000 W prototype was developed.The experimental results indicate that the converter has a good performance,and verifies the correctness of the analysis and calculation.
Research on Fast Recovery Diodes Typed ZK1105/4500

Yong-zhong GUO,Fei-niao WU,Rui-tao WANG,Yu-ling LI

DOI: https://doi.org/10.3969/j.issn.1000-100x.2006.05.046

2006-01-01

Abstract:Fast recovery diodes typed ZK1150-45 with 4500V reverse blocking voltage,1150A forward current and 6μs recovery time are designed and fabricated.In a PIN structure,detail analysis are made to reduce leakage current,volt-age drop,recovery time and to increase blocking voltage and forward current.It is showed that for so high electrical perfor-mance diode,N-substrate parameters must be determined critically.Double-beveled junction termination is studied by a laser beam OBIC(Optical-beam-induced Current) method.Taking influences of interface state between silicon and passi-vation material in count,depletion layer spread and electric field concentration are measured and observed directly.The shortest N-substrate is reached,which makes the best compromise among requirements from different electrical parameters.A special diffusion process for excellent P and N type impurity profile simultaneously has been found and put into production.Re-peated electron irradiations with 12MeV,100μA beam are applied to the chips before housing,and make the carrier life-time being controlled uniformly.In this way,an efficient and reliable process flow with high yield is achieved.
Voltage Slew Rate Design with Soft Switching Technique

Jialong Li,Yuying Wu,Dehong Xu

DOI: https://doi.org/10.1109/itecasia-pacific56316.2022.9941846

2022-01-01

Abstract:Wide-band-gap devices such as SiC MOSFET and GaN devices have distinct advantages of high speed and lower switching loss. However, they have higher dv/dt and may cause larger EMI noise. In this paper, design of voltage slew rate on SiC MOSFET devices with soft-switching is investigated. The dv/dt of power devices in the three-phase active-clamped zero voltage switching (ZVS) inverter is analyzed. The voltage slew rate of power devices vs. resonant parameters is discussed. Then the design of dv/dt on power devices are proposed. The dv/dt design has been verified through both the simulation and the experiment on the 10 kW/100kHzSiC-based ZVS three phase inverter.
Research and Application of Two-Transistor Forward Converter with Parallel and Series Combination

石健将,王慧贞,严仰光

DOI: https://doi.org/10.3969/j.issn.1000-100x.2002.05.005

IF: 5.967

2004-01-01

IEEE Transactions on Power Electronics

Abstract:A novel parallel-series combined two-transistor forward converter is proposed by comparing the parallel-parallel and parallel-series combination.This combined converter will greatly reduce the voltage overshoot of the rectifying diode and at the same time improve the reverse recovery of the output freewheeling diode. Moreover,the size and weight of the converter can also be reduced by interleaving technique and increasing the frequency.A 6kW parallel-serial combined two-transistor forward converter is successfully developed.
New Design of Clock Self Recovery Circuit Based on Time-to-voltage Conversion

Yu Changhong,Li Peihong,Liu Jilin

DOI: https://doi.org/10.13382/j.jemi.2008.02.005

2008-01-01

JOURNAL OF ELECTRONIC MEASUREMENT AND INSTRUMENT

Abstract:A totally new architecture for clock recovery is delivered in the article.Very simple circuit is designed for time-to-voltage conversion,which transforms time error into voltage error.It is very convenient to use the transformed voltage for error detection.The voltage is processed by a self-adaptive peak value capture circuit to realize voltage comparison and clock self-recovery.The circuit is designed with SMIC 0.18μm process lib.Systemic circuit simulation was carried out and experiment results indicate that the designed circuit can work within a wide band of 50MHz to 150MHz,which meets the requirement of clock recovery in a VLSI system design.
A new model of step recovery diode for CAD

Zhang, J.,Raisanen, A.

DOI: https://doi.org/10.1109/MWSYM.1995.406248

1995-01-01

Abstract:A new step recovery diode (SRD) model for CAD is developed by considering the voltage ramp in the SRD and using a DC measurement to extract a model parameter. This model can be directly used in commercial circuit simulators for designs of SRD circuits. Examples of using this model to analyse a comb generator and a frequency multiplier are given.<>
The Modelling of P-I-N Power Diode with Reverse Recovery

Yunqing Pei,Zhao'an Wang,Ise Toshifumi

DOI: https://doi.org/10.3321/j.issn:0253-987X.1999.06.002

1999-01-01

Abstract:A Simple model is presented for a power diode with reverse recovery. The effects of emitter and Auger recombination are involved by considering varied lifetime. Computer aided design software FECS (Power Electronic Circuit Simulation) is used to in improve the accuracy of the result. Simulation are made in many devices to verify the accuracy of the model.
Freewheeling diode reverse-recovery failure modes in IGBT applications

M.T. Rahimo,N.Y.A. Shammas

DOI: https://doi.org/10.1109/28.913734

IF: 4.079

2001-01-01

IEEE Transactions on Industry Applications

Abstract:In this paper, reverse-recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching occur during the recovery period in modern high-frequency power electronic applications. The work presented here confirms that the reverse-recovery process can by expressed by means of diode capacitance effects which influence the reverse-recovery characteristics. The paper also shows that the control of the carrier gradient and the remaining stored charge in the drift region during the recovery phase influence both failure modes and determine if the diode exhibits soft, snappy, or dynamic avalanche recovery characteristics.

engineering, electrical & electronic, multidisciplinary
Design and Implementation of Pulse's Fast Edge Shaping Circuit

WU Ya-ming,SHI Yi-bing,FU Zai-ming

DOI: https://doi.org/10.3969/j.issn.1000-8829.2008.11.026

2008-01-01

Abstract:Based on step recovery diode,a pulse fast edge shaping circuit is realized.Benefited from the long storage time and short transient time of step recovery diode,the design can effectively optimize the shape of rising edge of a square pulse,shorten its rising time to(140±20) ps,amplitude to(1.75±0.05) V,and achieve a compensation of pulse duty cycle.Detailed circuit structures and operation principle are illustrated.Experiment results show that the circuit exactly conforms to the design specifications.
Modeling of High-Voltage Nonpunch-Through PIN Diode Snappy Reverse Recovery and Its Optimal Suppression Method Based on RC Snubber Circuit

Xin Li,Fei Xiao,Yifei Luo,Ruitian Wang,Yaoqiang Duan

DOI: https://doi.org/10.1109/tie.2021.3094483

IF: 7.7

2022-06-01

IEEE Transactions on Industrial Electronics

Abstract:The snappy reverse recovery (SRR) and failure of high-voltage nonpunch-through (NPT) PIN diodes under extreme working conditions are of great significance to the reliability evaluation of operating diodes in actual power electronic devices. In this article, the analysis of the physical mechanism of the diode SRR and the restrictions of the traditional PT-PIN diode model are made. Then, the traditional model for soft recovery is improved in order to accurately describe the diode SRR characteristics. Simulations of key dynamic performances of the established model agree well with the experimental results. Furthermore, a suppression method for diode SRR based on the optimal RC snubber circuit is proposed. A high-voltage NPT-PIN diode used in the dcdc converter with different RC snubber circuits is simulated using the proposed diode snappy model and tested. The comparison results show good consistency between the simulated and measured voltage and current peaks and the diode SRR are suppressed effectively. The developed model and results are of much importance to the prediction of the safe operation area of the diode and to the reliability improvement of power electronic device.

automation & control systems,engineering, electrical & electronic,instruments & instrumentation
A Fast LVDC Vacuum Hybrid Circuit Breaker: Dielectric Recovery and Design Consideration

Siqi Liu,Pengfei Hu,Daozhuo Jiang,Yiqiao Liang,Jinwu Zhuang

DOI: https://doi.org/10.1049/gtd2.12241

2021-01-01

Abstract:Aiming at the fast protection requirements of electrical ships LVDC distribution system, this paper studies a topology of unidirectional vacuum hybrid circuit breaker. The hybrid circuit breaker is an improved current injection LVDC breaker based on precharged capacitor, which improves the dielectric recovery capability of vacuum interrupter after artificial current zero by using a freewheel diode. A synthetic test platform is built to study the dielectric strength recovery characteristics of a 45 mm diameter CuCr50 butt contact vacuum interrupter (driven by Thomson coil actuator, average opening speed of about 3 m/s)under high current(about 20 kA) and small gap(about 1 mm). The experimental results indicate that the dielectric strength of the contact can recover at a very fast speed within the arc time of 100 mu s; when the arc time is increased to 320 mu s, the dielectric strength of the contact cannot recover for a long time. Therefore, the design principle of the circuit breaker is obtained: within the arc time of 100 mu s, by increasing the arc time can increase the contact distance, so the transient interruption voltage tolerance margin of the circuit breaker can be improved. Based on the results of the test, this paper also proposes a calculation method of forced commutation circuit parameters, which is verified by the simulation. The research results show that the DC circuit breaker can realise the rapid breaking of 20 kA fault current within 2 ms, and has a good application prospect in the LVDC distribution system.
Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-Kv High-Voltage DC Breaker

Xiangyu Zhang,Zhanqing Yu,Zhengyu Chen,Biao Zhao,Rong Zeng

DOI: https://doi.org/10.1109/tpel.2019.2930739

IF: 5.967

2019-01-01

IEEE Transactions on Power Electronics

Abstract:At present, it is usually necessary to use fast recovery type diodes to cooperate with the fast switching actions of fully controlled devices such as insulated-gate bipolar transistors (IGBTs). However, the specific nature of the working conditions of the diode-bridge bidirectional solid-state switch (DBSS) provides an opportunity to apply standard recovery diodes for this purpose, which helps to reduce the cost of the bidirectional switch. This letter presents the self-oscillation phenomenon that is caused by the recovery processes of the diodes in a DBSS. Then, the recovery effects of these diodes in different topologies are analyzed from the perspective of the DBSS and optimized designs for both the snubber circuit and the energy-absorbing circuit are proposed. A 500-kV dc breaker is realized based on the proposed DBBS using the standard recovery diodes, which can work reliably with IGBTs, and the cost of the resulting dc circuit breakers is greatly reduced.
Analysis And Simulation Of A 4h-Sic Semi-Superjunction Schottky Barrier Diode For Softer Reverse-Recovery

Cao Lin,Pu Hong-Bin,Chen Zhi-Ming,Zang Yuan

DOI: https://doi.org/10.1088/1674-1056/21/1/017303

2012-01-01

Chinese Physics B

Abstract:In this paper, a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.

Design and Emulate of Fast and Soft-Recovery Diode

A Summary on the Concepts and Design of Fast Recovery Diodes

Fast Recovery Diode Model for Circuit Simulation of High Voltage High Power Three Level Converters

A High Efficiency Soft Switching Three-phase Grid-connected Inverter

A Novel 40 Kw Soft Switching Three-phase Pulse Width Modulation Rectifier

The Reviews and Status of Fast Recovery Diodes

Application of SiC diode in high frequency and high power current inverter

Modeling diode reverse recovery and corresponding implementation in fast time-domain simulation

Soft switching characteristics of a novel and efficient DC/DC converter

Research on Fast Recovery Diodes Typed ZK1105/4500

Voltage Slew Rate Design with Soft Switching Technique

Research and Application of Two-Transistor Forward Converter with Parallel and Series Combination

New Design of Clock Self Recovery Circuit Based on Time-to-voltage Conversion

A new model of step recovery diode for CAD

The Modelling of P-I-N Power Diode with Reverse Recovery

Freewheeling diode reverse-recovery failure modes in IGBT applications

Design and Implementation of Pulse's Fast Edge Shaping Circuit

Modeling of High-Voltage Nonpunch-Through PIN Diode Snappy Reverse Recovery and Its Optimal Suppression Method Based on RC Snubber Circuit

A Fast LVDC Vacuum Hybrid Circuit Breaker: Dielectric Recovery and Design Consideration

Optimal Design of Diode-Bridge Bidirectional Solid-State Switch Using Standard Recovery Diodes for 500-Kv High-Voltage DC Breaker

Analysis And Simulation Of A 4h-Sic Semi-Superjunction Schottky Barrier Diode For Softer Reverse-Recovery