Abstract:The search for new direct bandgap, earth-abundant semiconductors for efficient, high-quality optoelectronic devices, as well as photovoltaic and photocatalytic energy conversion has attracted considerable interest. One methodology for the search is to study ternary and multiternary semiconductors with more elements and more flexible properties. Cation mutation such as binary -> ternary -> quaternary for ZnS -> CuGaS2 -> Cu2ZnSnS4 and ZnO -> LiGaO2 -> Li2ZnGeO4 led to a series of new quaternary chalcogenide and oxide semiconductors with wide applications. Similarly, starting with GaN, ternary nitrides such as ZnSnN2 and ZnGeN2 have been designed and synthesized recently. However, quaternary nitride semiconductors have never been reported either theoretically or experimentally. Through a combination of the Materials Genome database with the first-principles calculations, we designed a series of quaternary nitride compounds I-III-Ge2N4 (I = Cu, Ag, Li, Na, K; III = Al, Ga, In) following the GaN -> ZnGeN2 -> I-III Ge2N4 mutation. Akin to Li2ZnGeO4, these quaternary nitrides crystallize in a wurtzite-derived structure as their ground state. The thermodynamic stability analysis shows that while most of them are not stable with respect to phase separation, there are two key exceptions (i.e., LiAlGe2N4 and LiGaGe2N4), which are stable and can be synthesized without any secondary phases. Interestingly, they are both lattice-matched to GaN and ZnO, and their band gaps are direct and larger than that of GaN, 4.36 and 3.74 eV, respectively. They have valence band edges as low as ZnO and conduction band edges as high as GaN, thereby combining the best of GaN and ZnO in a single material. We predict that flexible and efficient band structure engineering can be achieved through forming GaN/LiAlGe2N4/LiGaGe2N4 heterostructures, which have tremendous potential for ultraviolet optoelectronics.

The Electronic Properties of SiCAlN Quaternary Compounds

Electronic Structures and Band Offsets of Heterocrystalline Superlattices (3C-Aln)3n/(2h-aln)2…

A First-Principles Study of the Electronic Structure and Mechanical and Optical Properties of Caalsin3

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Studies on the Geometric and Electronic Structures of Sic Polytypes

Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N

Elastic properties and electronic structures of NaAlSi ternary obtained with first-principle calculations

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

Structural, Electronic, and Optical Properties of Ordered Si1−Ge C Alloys: A First Principles Study

Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN

First Principles Calculations of Electronic Structures and Optical Properties of Al- and Ca-doped Β-Si3n4

First-principles electronic structure calculations of Ba5Si2N6 with anomalous Si2N6 dimeric units

Comprehensive study on band-gap variations in $sp^3$-bonded semiconductors: roles of electronic states floating in internal space

Phonon and electronic properties of semiconducting silicon nitride bilayers

Electrical Properties of Al/AlN/Si MIS Structure

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

Structural, Electronic and Optical Properties of Bandgap-Tunable Cu2ZnSixSn1−xSe4 Alloys

Electronic structure, mechanical properties and anisotropy of thermal conductivity of Y–Si–O–N quaternary crystals

Study on the AlN/Si Interface Properties

Electronic-Structure of Si-C Alloys

Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1- xAlxN, Al1- xGaxN, and Ga1- xInxN)