Ferroelectric Properties and Microstructures of Sm-doped Bi4Ti3O12 Ceramics

M Chen,ZL Liu,Y Wang,CC Wang,XS Yang,KL Yao
DOI: https://doi.org/10.1016/j.physb.2004.06.055
IF: 2.988
2004-01-01
Physica B Condensed Matter
Abstract:Sm-doped bismuth titanate (Bi4−xSmxTi3O12 (BST)) ceramics were prepared by a conventional electroceramic technique and effects of Sm-doping on the ferroelectric properties of Bi4Ti3O12 (BIT) were investigated. XRD studies indicated that all of the BST ceramics consisted of single phase of a bismuth-layered structure corresponding to crystalline phase of BIT. SEM micrographs showed randomly oriented and plate-like morphology. For the BST ceramic with x=0.8, Sm-doping resulted in a large remanent polarization (Pr) of 16μC/cm2, a low-coercive field (Ec) of 70KV/cm and a low Curie temperature of 475°C.
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