Abstract:High Sm2O3-doped Bi4Ti3O12 (BIT)-based ceramics were prepared by solid-state reaction method. The influence of the concentration of Sm2O3-doping on the crystal phase, the microstructure and dielectrical properties of the samples were investigated by XRD, SEM, Agilent 4284A and P-E test system. The results showed that the new compound Bi0.56Sm1.44Ti2O7 was observed when the concentration of Sm2O3-doping was 12.0mol%. The dielectric studies revealed that the dielectric loss (tanδ) of the ceramics reduced to 0.003 when the concentration of Sm2O3-doping was in a range of 3.0∼12.0mol%. The Curie temperature (T c) of each sample gradually moved toward lower temperature as the amount of Sm2O3 was increased up to 12.0mol%.

Investigation of Microstructure and Dielectrical Properties of Highly Sm2O3-Doped Bismuth Titanate Ceramics