Abstract:Synthetic antiferromagnets (SAFs), formed through an interlayer antiferromagnetic exchange coupling of ferromagnetic layers, exhibit intriguing potential in next‐generation spintronic devices due to the zero net magnetization and the high thermal stability. Compared to ferromagnets that are conventionally widely employed, SAFs are expected to significantly improve the data density and stability due to the suppression of the net stray field. Thus far, it has been well established that the spin‐orbit torque (SOT) switching of SAF requires an in‐plane effective magnetic field to break inversion symmetry and thereby assist the Landau–Lifshitz dynamics. This field can either be externally applied or achieved through the exchange coupling given by an adjacent ferromagnetic layer. Such requirement hinders the application of SAFs since a net magnetization cannot be ruled out. Here, the field‐free SOT switching of an all‐SAF system with a significantly reduced net magnetization is demonstrated. The switching is demonstrated to be robust up to ≈460 K. This work paves the way for the practical applications of the SAFs in the SOT‐based memory devices. An investigation of the electronic switching of a synthetic antiferromagnetic (SAF) system. The switching is triggered by spin‐orbit torque and is robust up to ≈460 K. This further facilitates a three‐terminal all‐SAF magnetic tunnel junction with a tunnel magnetoresistance of 43%. This work paves the way for the practical applications of the SAFs.

[Co/ni] N -Based Synthetic Antiferromagnet with Perpendicular Anisotropy and Its Application in Pseudo Spin Valves

Polarity Manipulation of Anomalous Hall Effect and Enhanced Spin-Orbit Torques in Perpendicular Synthetic Antiferromagnets

High Giant Magnetoresistance and Thermal Annealing Effects in Perpendicular Magnetic [Co/ni]n-Based Spin Valves

Fully Compensated Synthetic Antiferromagnets with Pronounced Anomalous Hall and Magneto-Optical Responses

Effect of Annealing on SAF Spin Valves with Variable Easy Axis of Free Layer

Spin-orbit torque in completely compensated synthetic antiferromagnet

Spin-orbit Torque in a Completely Compensated Synthetic Antiferromagnet

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Systematic Control of the Interlayer Exchange Coupling in Perpendicularly Magnetized Synthetic Antiferromagnets

Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets

Giant Magnetoresistance Enhancement In Spin Valves With Nano-Oxide Layers

Role of Tbfe on Perpendicular Magnetic Anisotropy and Giant Magnetoresistance Effect in [Co/ni](n)-Based Spin Valves

Dependence of GMR on NiFe Layer Thickness in High Sensitive Simple Spin Valve

Improvement of Magnetoresistive Character of NiO/NiFeCo/Cu/NiFeCo Exchange-Biased Spin-Valves Through Annealing in Magnetic Field

Magnetoresistance in Nano-Scale Nio-Containing Co/Cu/Co Spin Valves

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Enhanced Difference in Switching Fields for Perpendicular Magnetic Spin Valves with A Composite [co/ni](n)/tbco Reference Layer

Annealing Effect on Magnetoresistance in Nio-Co-Cu Based Spin Valves

Tuning the coercivity of synthetic antiferromagnetic nanoplatelets with perpendicular anisotropy by varying the Co1− x B x alloy composition

Switching of biaxial synthetic antiferromagnets: a micromagentic study

A High Resolution Electron Microscopy Study of Specular Spin Valves with Noncontinuous Nano-Oxide Layers