Abstract:Synthetic antiferromagnets (SAFs), formed through an interlayer antiferromagnetic exchange coupling of ferromagnetic layers, exhibit intriguing potential in next‐generation spintronic devices due to the zero net magnetization and the high thermal stability. Compared to ferromagnets that are conventionally widely employed, SAFs are expected to significantly improve the data density and stability due to the suppression of the net stray field. Thus far, it has been well established that the spin‐orbit torque (SOT) switching of SAF requires an in‐plane effective magnetic field to break inversion symmetry and thereby assist the Landau–Lifshitz dynamics. This field can either be externally applied or achieved through the exchange coupling given by an adjacent ferromagnetic layer. Such requirement hinders the application of SAFs since a net magnetization cannot be ruled out. Here, the field‐free SOT switching of an all‐SAF system with a significantly reduced net magnetization is demonstrated. The switching is demonstrated to be robust up to ≈460 K. This work paves the way for the practical applications of the SAFs in the SOT‐based memory devices. An investigation of the electronic switching of a synthetic antiferromagnetic (SAF) system. The switching is triggered by spin‐orbit torque and is robust up to ≈460 K. This further facilitates a three‐terminal all‐SAF magnetic tunnel junction with a tunnel magnetoresistance of 43%. This work paves the way for the practical applications of the SAFs.

Switching of biaxial synthetic antiferromagnets: a micromagentic study

Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets

Spin-orbit torque switching of synthetic antiferromagnets

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Field-free Spin-Orbit Torque Switching of Synthetic Antiferromagnet Through Interlayer Dzyaloshinskii-Moriya Interactions

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Ion-irradiation-induced Field-Free Magnetization Switching in Synthetic Antiferromagnets by Spin–orbit Torque

Fast barrier-free switching in synthetic antiferromagnets

Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation

Identification and Manipulation of Spin Wave Polarizations in Perpendicularly Magnetized Synthetic Antiferromagnets

Phase Coexistence and Transitions between Antiferromagnetic and Ferromagnetic States in a Synthetic Antiferromagnet

Impact of net magnetization on spin–orbit torque switching of synthetic ferromagnets in magnetic tunnel junctions

Voltage Manipulation of Synthetic Antiferromagnetism in CoFeB/Ta/CoFeB Heterostructure for Spintronic Application

Electric steering of spin excitation in nanostructured synthetic antiferromagnet

Spin-orbit Torque in a Completely Compensated Synthetic Antiferromagnet

Spin–orbit Torque-Induced Multiple Magnetization Switching Behaviors in Synthetic Antiferromagnets

Spin-orbit torque in completely compensated synthetic antiferromagnet

Thermal and Field-Rate Dependence of Multi-Step Magnetization Switching of Synthetic Antiferromagnetic Multilayers

Ferromagnetic Resonance Modes of a Synthetic Antiferromagnet at Low Magnetic Fields

Field-free Switching and High Spin-Orbit Torque Efficiency in Co/Ir/CoFeB Synthetic Antiferromagnets Deposited on Miscut Al2O3 Substrates

Identifying Switching of Antiferromagnets by Spin-Orbit Torques