Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets
Jinwu Wei,Xiao Wang,Baoshan Cui,Chenyang Guo,Hongjun Xu,Yao Guang,Yuqiang Wang,Xuming Luo,Caihua Wan,Jiafeng Feng,Hongxiang Wei,Gen Yin,Xiufeng Han,Guoqiang Yu
DOI: https://doi.org/10.1002/adfm.202109455
IF: 19
2021-11-25
Advanced Functional Materials
Abstract:Synthetic antiferromagnets (SAFs), formed through an interlayer antiferromagnetic exchange coupling of ferromagnetic layers, exhibit intriguing potential in next‐generation spintronic devices due to the zero net magnetization and the high thermal stability. Compared to ferromagnets that are conventionally widely employed, SAFs are expected to significantly improve the data density and stability due to the suppression of the net stray field. Thus far, it has been well established that the spin‐orbit torque (SOT) switching of SAF requires an in‐plane effective magnetic field to break inversion symmetry and thereby assist the Landau–Lifshitz dynamics. This field can either be externally applied or achieved through the exchange coupling given by an adjacent ferromagnetic layer. Such requirement hinders the application of SAFs since a net magnetization cannot be ruled out. Here, the field‐free SOT switching of an all‐SAF system with a significantly reduced net magnetization is demonstrated. The switching is demonstrated to be robust up to ≈460 K. This work paves the way for the practical applications of the SAFs in the SOT‐based memory devices. An investigation of the electronic switching of a synthetic antiferromagnetic (SAF) system. The switching is triggered by spin‐orbit torque and is robust up to ≈460 K. This further facilitates a three‐terminal all‐SAF magnetic tunnel junction with a tunnel magnetoresistance of 43%. This work paves the way for the practical applications of the SAFs.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology