Abstract:Synthetic antiferromagnets (SAFs), formed through an interlayer antiferromagnetic exchange coupling of ferromagnetic layers, exhibit intriguing potential in next‐generation spintronic devices due to the zero net magnetization and the high thermal stability. Compared to ferromagnets that are conventionally widely employed, SAFs are expected to significantly improve the data density and stability due to the suppression of the net stray field. Thus far, it has been well established that the spin‐orbit torque (SOT) switching of SAF requires an in‐plane effective magnetic field to break inversion symmetry and thereby assist the Landau–Lifshitz dynamics. This field can either be externally applied or achieved through the exchange coupling given by an adjacent ferromagnetic layer. Such requirement hinders the application of SAFs since a net magnetization cannot be ruled out. Here, the field‐free SOT switching of an all‐SAF system with a significantly reduced net magnetization is demonstrated. The switching is demonstrated to be robust up to ≈460 K. This work paves the way for the practical applications of the SAFs in the SOT‐based memory devices. An investigation of the electronic switching of a synthetic antiferromagnetic (SAF) system. The switching is triggered by spin‐orbit torque and is robust up to ≈460 K. This further facilitates a three‐terminal all‐SAF magnetic tunnel junction with a tunnel magnetoresistance of 43%. This work paves the way for the practical applications of the SAFs.

Spin-orbit torque switching of synthetic antiferromagnets

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets

Spin–orbit Torque-Induced Multiple Magnetization Switching Behaviors in Synthetic Antiferromagnets

Switching of biaxial synthetic antiferromagnets: a micromagentic study

Spin-Orbit Torque Induced Magnetization Switching in Co/Pt Multilayer-based Synthetic Antiferromagnets

Field-free Spin-Orbit Torque Switching of Synthetic Antiferromagnet Through Interlayer Dzyaloshinskii-Moriya Interactions

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Spin-orbit torque in completely compensated synthetic antiferromagnet

Spin-orbit Torque in a Completely Compensated Synthetic Antiferromagnet

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Ion-irradiation-induced Field-Free Magnetization Switching in Synthetic Antiferromagnets by Spin–orbit Torque

Critical Magnetic Field for Lifting the Degeneracy of Monochiral Domain Walls with Strong Interlayer Antiferromagnetic Coupling

Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching with a Noncollinear In-Plane Assisting Magnetic Field

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Polarity Manipulation of Anomalous Hall Effect and Enhanced Spin-Orbit Torques in Perpendicular Synthetic Antiferromagnets

Oscillatory spin-orbit torque switching induced by field-like torques

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Engineering Spin Configurations of Synthetic Antiferromagnet by Controlling Long-Range Oscillatory Interlayer Coupling and Neighboring Ferrimagnetic Coupling

Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB