Abstract:Emergent manganite/ruthenate‐based synthetic antiferromagnets demonstrate three fascinating sign reversals in magnetoresistance via tuning the measurement geometry, temperature, and hydrostatic pressure. These sign reversals are further revealed by crossovers between spin selective quantum confinement effect, localized state‐assisted resonant tunneling, and/or electron tunneling mechanisms. This study provides new insights into the understanding and optimization of spin transport in all‐oxide‐based synthetic antiferromagnets. The electronic structure of constituent layers and the spin channel of propagating electrons are critical factors that affect the magnitude and sign of magnetoresistance (MR) in synthetic antiferromagnets (SAFMs), which are important for spintronic applications. However, for all‐oxide‐based SAFMs, where there is strong coupling between multiple degrees of freedom, spin transport becomes more complex and remains elusive. Here, using ultrathin half‐metallic manganite/doped ruthenate SAFMs as a model system, three sign reversals of MR are demonstrated accompanied by the crossover between underlying spin‐dependent transport mechanisms. Electron tunneling produces normal MR in the current‐perpendicular‐to‐plane (CPP) geometry at low temperatures, whereas carrier confinement causes inverse MR in the current‐in‐plane (CIP) geometry. Strikingly, CPP MR can undergo a temperature‐driven sign reversal due to resonant tunneling via localized states in the spacer. Moreover, hydrostatic pressure can modulate the interlayer exchange coupling and induce an asymmetric interfacial response to dramatically facilitate electron tunneling, driving a controllable sign reversal of CIP MR. These results provide new insights into understanding and optimization of MR in all‐oxide‐based SAFMs.

Fully Compensated Synthetic Antiferromagnets with Pronounced Anomalous Hall and Magneto-Optical Responses

Systematic Control of the Interlayer Exchange Coupling in Perpendicularly Magnetized Synthetic Antiferromagnets

Spin-orbit torque in completely compensated synthetic antiferromagnet

Spin-orbit Torque in a Completely Compensated Synthetic Antiferromagnet

Polarity Manipulation of Anomalous Hall Effect and Enhanced Spin-Orbit Torques in Perpendicular Synthetic Antiferromagnets

Identification and Manipulation of Spin Wave Polarizations in Perpendicularly Magnetized Synthetic Antiferromagnets

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets

Phase Coexistence and Transitions between Antiferromagnetic and Ferromagnetic States in a Synthetic Antiferromagnet

Electrical Detection of Acoustic Antiferromagnetic Resonance in Compensated Synthetic Antiferromagnets

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Magnetization reversal and domain structures in perpendicular synthetic antiferromagnets prepared on rigid and flexible substrates

Spin-orbit torque switching of synthetic antiferromagnets

[Co/ni] N -Based Synthetic Antiferromagnet with Perpendicular Anisotropy and Its Application in Pseudo Spin Valves

Stabilization of coupled Dzyaloshinskii domain walls in fully compensated synthetic anti-ferromagnets

Switching of biaxial synthetic antiferromagnets: a micromagentic study

Ferromagnetic Resonance Modes of a Synthetic Antiferromagnet at Low Magnetic Fields

Magnetization Dynamics in Synthetic Antiferromagnets with Perpendicular Magnetic Anisotropy

Measurement Geometry and Hydrostatic Pressure‐Dependent Magnetoresistance in All‐Oxide‐Based Synthetic Antiferromagnets

Antiferromagnetic Domain Wall Control via the Surface Spin Flop in Fully Tunable Synthetic Antiferromagnets with Perpendicular Magnetic Anisotropy