Magnetoresistance of a mesoscopic tunneling quantum dot

Ping Zhang,Qi-Kun Xue,X. C. Xie

2002-01-01

Abstract:This paper has been withdrawn by the authors, since the reference citation were not appropriately arranged.

What problem does this paper attempt to address?

WITHDRAWN: Nanocrystallization kinetics, structure and magnetic properties of FINEMET-type ribbons with Cu substitution by Ag

Manh-Huong Phan,H-X Peng,Seong-Cho Yu,Nguyen Duc Tho,Nguyen Chau

DOI: https://doi.org/10.1016/j.physb.2006.04.003

2006-01-01

Abstract:This article has been withdrawn at the request of the author(s) and/or editor. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at http://www.elsevier.com/locate/withdrawalpolicy .
Lack of Resonant Spin Hall Conductance in Magnetic Field

Pei-Qing Jin,You-Quan Li

2007-01-01

Abstract:This paper has been withdrawn by the author(s) due to the discussion was made on the basis of linear term merely, which is incomplete.
Tunneling Magnetoresistance Effect in Ferromagnet/quantum Dot/superconductor Junctions

Wenting Ning,Chongju Chen,Qiang Cheng,Biao Jin

DOI: https://doi.org/10.1016/j.physc.2013.01.015

2013-01-01

Physica C Superconductivity

Abstract:We analyze the charge transport in a ferromagnet/quantum dot/superconductor system assuming an exchange-type interaction on the quantum dot. The nonequilibrium Green’s function method is employed to calculate the tunneling charge conductance. When the ferromagnetic lead is in the half-metallic limit, the key mechanism governing the low-energy charge transport of this hybrid structure is the so-called same-spin-band Andreev reflection, in which the incident electron and the Andreev reflected hole belong to the same spin-band. The same-spin-band Andreev reflection depends sensitively on the relative angle θ between the exchange field in ferromagnetic lead and the exchange field in quantum dot, and may induce giant magnetoresistance effect in the low temperature regime.
Withdrawal: Dependence of Giant Magnetoresistance on the Thicknesses of Magnetic and Nonmagnetic Layers in Dual Spin Valves [phys. Stat. Sol. (a) 201, 2995 (2004)]

Yong Wang,Ming Xu,Zhenhong Mai

DOI: https://doi.org/10.1002/pssa.200406935

2005-01-01

physica status solidi (a)

Abstract:AbstractThe authors withdraw their article published in phys. stat. sol. (a) 201, 2995 (2004). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Molecular quantum phase transistor

Zekan Qian,Rui Li,Xingyu Zhao,Shimin Hou,Stefano Sanvito

2008-01-01

Abstract:This paper has been withdrawn by the authors due to some technical problems in the paper.
Thermoelectric Transport Through A Quantum Dot with A Magnetic Impurity

Yu Zhen,Guo Yu,Zheng Jun,Chi Feng

DOI: https://doi.org/10.1088/1674-1056/22/11/117303

2013-01-01

Abstract:We study the thermoelectric effect in a small quantum dot with a magnetic impurity in the Coulomb blockade regime. The electrical conductance, thermal conductance, thermopower, and the thermoelectrical figure of merit (FOM) are calculated by using Green's function method. It is found that the peaks in the electrical conductance are split by the exchange coupling between the electron entering into the dot and the magnetic impurity inside the dot, accompanied by the decrease in the height of peaks. As a result, the resonances in the thermoelectric quantities, such as the thermal conductance, thermopower, and the FOM, are all split, opening some effective new working regions. Despite of the significant reduction in the height of the electrical conductance peaks induced by the exchange coupling, the values of the FOM and the thermopower can be as large as those in the case of zero exchange coupling. We also find that the thermoelectric efficiency, characterized by the magnitude of the FOM, can be enhanced by adjusting the left-right asymmetry of the electrode-dot coupling or by optimizing the system's temperature.
Quantum Oscillations of Tunneling Magnetoresistance in Magnetic Tunnel Junctions

J Yang,J Wang,ZM Zheng,DY Xing,CR Chang

DOI: https://doi.org/10.1103/physrevb.71.214434

IF: 3.7

2005-01-01

Physical Review B

Abstract:Taking into account a tunneling current with ballistic and diffusive components, we study the tunneling magnetoresistance (MR) in FM/I/NM/I/FM double tunnel junctions where FM is the ferromagnet, NM the normal metal, and I the insulating barrier. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with thickness of the NM layer. It is shown that the experimental results observed in NiFe/Al2O3/Cu/Co junctions by Yuasa, Nagahama, and Suzuki [Science 297, 234 (2002)] are intrinsic features, which can be reproduced by the present calculations.
Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Zhiming Zheng,Yunong Qi,D. Xing,Jinming Dong

DOI: https://doi.org/10.1103/PhysRevB.59.14505

IF: 3.7

1999-01-01

Physical Review B

Abstract:Based on an extended Slonczewski model with double delta-type potential barriers, we study spin-dependent resonant tunneling conductances in a double-tunnel-junction structure, in which two ferromagnetic electrodes are separated from a middle nonmagnetic layer of thickness a by two thin insulating layers, respectively. It is shown that as the thickness a is increased, the tunneling magnetoresistance, along with the tunneling conductance for parallel and antiparallel magnetization configurations, exhibits amplitude-varying oscillating behavior with a period of a = pi/k(F) (k(F) being the Fermi wave vector). This abnormal phenomenon is found to stem from the spin-dependent resonant transmission of electrons passing through the double-tunnel-junction structure. [S0163-1829(99)00122-8].
Monte Carlo Simulation of Tunneling Magnetoresistance in Nanostructured Materials

ZG Huang,ZG Chen,K Peng,DH Wang,FM Zhang,WY Zhang,YW Du

DOI: https://doi.org/10.1103/physrevb.69.094420

IF: 3.7

2004-01-01

Physical Review B

Abstract:A two-level model of tunneling magnetoresistance (MR) containing coplay of the relative orientation of moments between clusters, the intrinsic characters of clusters, and the Coulomb blockade effect, is presented. Based on the Monte Carlo simulation, spin configurations, MR and resistivity as function of temperature and field were studied, respectively. Simulated results are found to be in good agreement with the recent experimental data. The unusual enhancement of MR is attributed to the interaction between the clusters and the intrinsic character of clusters. Although the Coulomb blockade effect plays little role on MR, it has an important effect on the resistivity at low temperature.
Large magnetoresistance induced by quantum charge fluctuations in magnetic double dots

L. Sheng,D.Y. Xing,D.N. Sheng

DOI: https://doi.org/10.1016/j.ssc.2006.01.043

IF: 1.934

2006-01-01

Solid State Communications

Abstract:We study electron tunnelling through two small ferromagnetic dots. Quantum charge fluctuations and interdot coupling cause each Coulomb peak of conductance at zero interdot coupling to split. The interdot tunnel coupling depends on the relative orientation of magnetizations of the two dots, leading to different splitting energies of the Coulomb peaks in parallel and antiparallel magnetization alignments. As a result, a very large tunnelling magnetoresistance occurs near the Coulomb peaks, and its sign may be either positive or negative.
Anisotropic magnetoresistance involves metal-insulator transition in single crystal La0.77Ca0.23MnO3

Wanjun Jiang,XueZhi Zhou,H. P. Kunkel,Gwyn Williams,Y. Mukovskii,K. Glazyrin

DOI: https://doi.org/10.48550/arXiv.0710.5537

2007-10-29

Strongly Correlated Electrons

Abstract:The paper has been withdrawn for some reasons
Comment on ``Fundamental relation between electrical and thermoelectric transport coefficients in the quantum Hall regime''

Steven H. Simon

DOI: https://doi.org/10.48550/arXiv.cond-mat/9705001

1997-05-03

Abstract:Paper withdrawn due to errors. Revised version may or may not appear in the future.

Mesoscale and Nanoscale Physics
Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes

Ireneusz Weymann,Jürgen König,Jan Martinek,Józef Barnas,Gerd Schön

DOI: https://doi.org/10.1103/PhysRevB.72.115334

2005-07-15

Abstract:We study electronic transport through quantum dots weakly coupled to ferromagnetic leads with collinear magnetization directions. Tunneling contributions of first and second order in the tunnel-coupling strength are taken into account. We analyze the tunnel magnetoresistance (TMR) for all combinations of linear and nonlinear response, at or off resonance, with an even or odd dot-electron number. Different mechanisms for transport and spin accumulation the various regimes give rise to different TMR behavior.

Mesoscale and Nanoscale Physics
Quantum Transport through a Quantum Dot Coupled to Majorana Nanowire and Two Ferromagnets with Noncollinear Magnetizations

Yu-Mei Gao,Yao-Hong Shen,Feng Chi,Zi-Chuan Yi,Li-Ming Liu

DOI: https://doi.org/10.3390/nano14141210

2024-07-16

Abstract:We study the electron tunneling (ET) and local Andreev reflection (AR) processes in a quantum dot (QD) coupled to the left and right ferromagnetic leads with noncollinear ferromagnetisms. In particular, we consider that the QD is also side-coupled to a nanowire hosting Majorana bound states (MBSs) at its ends. Our results show that when one mode of the MBSs is coupled simultaneously to both spin-up and spin-down electrons on the QD, the height of the central peak is different from that if the MBS is coupled to only one spin component electrons. The ET and AR conductances, which are mediated by the dot-MBS hybridization, strongly depend on the angle between the left and right magnetic moments in the leads. Interaction between the QD and the MBSs will result in sign change of the angle-dependent tunnel magnetoresistance. This is very different from the case when the QD is coupled to regular fermonic mode, and can be used for detecting the existence of MBSs, a current challenge in condensed matter physics under extensive investigations.
Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles

Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai

DOI: https://doi.org/10.1109/TMAG.2015.2451705

2015-11-24

Abstract:In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent (direct) double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry.

Mesoscale and Nanoscale Physics,Materials Science,Computational Physics,Quantum Physics
Nonequilibrium Kondo correlation in an interacting quantum dot with spin-flip scattering

Bing Dong,H. L. Cui,S. Y. Liu,X. L. Lei

DOI: https://doi.org/10.48550/arXiv.cond-mat/0303093

2003-03-16

Abstract:This paper has been withdrawn by the author(s)

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Dynamic Tunneling Magnetoresistance in Quantum Dot System under the Perturbation of Phonon

Lili Zhao,Ying Liu,Chun mei Liu,Rui Yang

DOI: https://doi.org/10.1088/1757-899x/490/2/022026

2019-01-01

IOP Conference Series Materials Science and Engineering

Abstract:We theoretically investigate the tunneling magnetoresistance(TMR) effect in a center quantum dot (QD) connected simultaneously to two Ferromagnets and a local phonon bath. By using the nonequilibrium Keldysh Green's function technique, we obtain the formula of the TMR contained the effects of phonon. The linewidth function and angle θ influence the TMR curves significantly.
Quantifying Crystallographic Orientation Effects on Tunneling Magnetoresistance via Transfer Matrix and Simulation

Qiang Kang,Chenguang Hu

2024-11-09

Abstract:The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying the influence of different crystallographic orientations on tunneling magnetoresistance (TMR) remains underexplored [1, 2]. This study employs the transfer matrix method to construct orientation-specific matrices, enabling a systematic investigation of conductance variations under different magnetic and crystallographic conditions. This approach offers a deeper understanding of how crystallographic orientation modulates TMR by developing a framework that adapts the TMM to account for orientation-dependent electronic states and interfacial characteristics [3]. Fundamentally, the TMM represents the partition function for systems with interactions limited to nearest neighbors. It is particularly well-suited for modeling spin-dependent electron tunneling in oriented magnetic tunnel junctions [4, 5].

Mesoscale and Nanoscale Physics,Mathematical Physics
Giant tunneling magnetoresistance and quantum interference effect in ferromagnet/ferromagnet/s-wave superconductor junctions

Qiang Cheng,Biao Jin

DOI: https://doi.org/10.1016/j.physc.2011.11.011

2012-01-01

Abstract:We study the tunneling magnetoresistance (TMR) effect in asymmetric ferromagnet/ferromagnet/s-wave superconductor junctions based on the extended Blonder-Tinkham-Klapwijk theory. When the left ferromagnet (FM) is in the half-metallic limit, the low-energy charge transport in this system is governed by the so-called same-spin-band Andreev reflection, where the incident electron and the Andreev reflected hole belong to the same spin subband. It is demonstrated that the same-spin-band Andreev reflection depends sensitively on the relative orientation of the magnetizations in the two FMs leading to giant TMR effect (TMR > 10 6% for T/T c ≪ 1). Distinctive oscillatory variation of TMR with the thickness or the spin polarization of the intermediate FM is also found. © 2011 Elsevier B.V. All rights reserved.
Magnetization Reversal Mechanism of Magnetic Tunnel Junctions

CY Liu,J Li,Y Wang,JY Chen,QY Xu,G Ni,H Sang,YW Du

DOI: https://doi.org/10.1088/1009-1963/11/1/314

2002-01-01

Abstract:Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.

Magnetoresistance of a mesoscopic tunneling quantum dot

WITHDRAWN: Nanocrystallization kinetics, structure and magnetic properties of FINEMET-type ribbons with Cu substitution by Ag

Lack of Resonant Spin Hall Conductance in Magnetic Field

Tunneling Magnetoresistance Effect in Ferromagnet/quantum Dot/superconductor Junctions

Withdrawal: Dependence of Giant Magnetoresistance on the Thicknesses of Magnetic and Nonmagnetic Layers in Dual Spin Valves [phys. Stat. Sol. (a) 201, 2995 (2004)]

Molecular quantum phase transistor

Thermoelectric Transport Through A Quantum Dot with A Magnetic Impurity

Quantum Oscillations of Tunneling Magnetoresistance in Magnetic Tunnel Junctions

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Monte Carlo Simulation of Tunneling Magnetoresistance in Nanostructured Materials

Large magnetoresistance induced by quantum charge fluctuations in magnetic double dots

Anisotropic magnetoresistance involves metal-insulator transition in single crystal La0.77Ca0.23MnO3

Comment on ``Fundamental relation between electrical and thermoelectric transport coefficients in the quantum Hall regime''

Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes

Quantum Transport through a Quantum Dot Coupled to Majorana Nanowire and Two Ferromagnets with Noncollinear Magnetizations

Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles

Nonequilibrium Kondo correlation in an interacting quantum dot with spin-flip scattering

Dynamic Tunneling Magnetoresistance in Quantum Dot System under the Perturbation of Phonon

Quantifying Crystallographic Orientation Effects on Tunneling Magnetoresistance via Transfer Matrix and Simulation

Giant tunneling magnetoresistance and quantum interference effect in ferromagnet/ferromagnet/s-wave superconductor junctions

Magnetization Reversal Mechanism of Magnetic Tunnel Junctions