Anisotropic magnetoresistance involves metal-insulator transition in single crystal La0.77Ca0.23MnO3

Wanjun Jiang,XueZhi Zhou,H. P. Kunkel,Gwyn Williams,Y. Mukovskii,K. Glazyrin

DOI: https://doi.org/10.48550/arXiv.0710.5537

2007-10-29

Strongly Correlated Electrons

Abstract:The paper has been withdrawn for some reasons

What problem does this paper attempt to address?

Anisotropic Conduction Induced by Current Processing in the La0.8ca0.2mno3 Film

Y. W. Xie,J. R. Sun,D. J. Wang,S. Liang,W. M. Lu,B. G. Shen

DOI: https://doi.org/10.1063/1.2369844

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Effects of current processing have been experimentally studied for the La0.8Ca0.2MnO3 film. An anisotropic conduction is observed when the film is processed by a current of the density of ∼2.4×105A∕cm2. Difference between the resistances in the direction of the processing current and the reverse direction can be as high as 10 000%. Different from the original film, which exhibits a metal-to-insulator transition at ∼214K, the sample becomes insulating below 300K under low voltage bias and undergoes a metallic transition at very different temperatures in the two directions when the voltage bias is high enough. These features remain after reordering the electrodes, which reveals the intrinsic origin of the anisotropy, instead of interfacial barrier due to current processing.
Magnetic Reversal in Sr4Ru3O10 Nanosheets Probed by Anisotropic Magnetoresistance

Yan Liu,Weiwei Chu,Jiyong Yang,Guoqiang Liu,Haifeng Du,Wei Ning,Langsheng Ling,Wei Tong,Zhe Qu,Gang Cao,Zhuan Xu,Mingliang Tian

DOI: https://doi.org/10.1103/physrevb.98.024425

IF: 3.7

2018-01-01

Physical Review B

Abstract:The origin of the unusual second magnetic transition at a temperature T-M in the ruthenate Sr4Ru3O10 remains elusive. Here, we have investigated the thickness-dependent anisotropic magnetoresistance of Sr4Ru3O10 nanosheets, and clearly found that the sign of the magnetoresistance (MR) presents an unusual reversal behavior from a positive to negative with an external magnetic field H perpendicular to Lab plane or vice versa with H parallel to ab plane when the temperature decreases across the T-M. Analysis of the data demonstrates that this MR reversal is caused by the magnetization reversal from the ab plane ferromagnetic order at T > T-M to the c direction at T < T-M due to the competition between the shape anisotropy and the inherent magnetocrystalline anisotropy. Our result suggests that the second magnetic transition in Sr4Ru3O10 nanosheets originates from a spin reorientation.
A phenomenological approach to the anisotropic magnetoresistance and planar Hall effect in tetragonal La(2/3)Ca(1/3)MnO3 thin films

J Li,S L Li,Z W Wu,S Li,H F Chu,J Wang,Y Zhang,H Y Tian,D N Zheng

DOI: https://doi.org/10.1088/0953-8984/22/14/146006

2010-04-14

Abstract:A La(2/3)Ca(1/3)MnO(3) Hall bar with its long dimension roughly along the hard axis [110] was fabricated on a single-crystal-like tensilely strained film on SrTiO(3)(001). The anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) have been studied at various external magnetic fields and temperatures. A phenomenological model in the high field limit is developed, and the galvanomagnetic tensor based on a tetragonal symmetry 4/mmm (D(4h)), applicable to epitaxial films on a substrate, has been obtained by expanding the tensor to the sixth order. The derived in-plane transverse resistance R(xy) shows a sin2φ(M) angular dependence, while the longitudinal R(xx) is constituted by not only a two-fold cos2φ(M) term, but also a four-fold cos4φ(M) term due to the square symmetry of the lattice. The model is in good agreement with the experimental results in high fields, while deviations are observed near the {100} easy axis with the decreasing field. Close inspection of the fitting parameters reveals the evolution of these term weights with temperature and magnetic field, which is distinct from conventional ferromagnetic metals and cannot be explained by the phenomenological model. An alternative mechanism for AMR, stemming from the magnetization-induced local orbit deformation through spin-orbit interaction, as previously proposed by O'Donnell et al, may be prevalent in manganites and other systems of complicated crystal structure.
Strain Driven Anisotropic Magnetoresistance in Antiferromagnetic La_0.4Sr_0.6MnO_3

A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward

DOI: https://doi.org/10.1063/1.4892420

IF: 4

2014-01-01

Applied Physics Letters

Abstract:We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1−xSrxMnO3 (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.
Study of anisotropic magnetoresistance in the thermodynamic fluctuation regime of single crystals of Bi2Sr2CaCu2O8+x

Gernot Heine,Wolfgang Lang,Xiao-Lin Wang,Xian-Zhong Wang

DOI: https://doi.org/10.1007/bf00768504

1996-11-01

Journal of Low Temperature Physics

Abstract:Measurements of the in-plane and out-of-plane magnetoresistance in Bi2Sr2CaCu2O8+x single crystals with a critical temperature Tc=93 K are reported for temperatures between Tc and 200 K and in magnetic fields up to 13 T. Both the transverse and the longitudinal in-plane magnetoresistance are positive and originate entirely from the suppression of superconducting fluctuations by the magnetic field. The longitudinal out-of-plane magnetoresistance is negative at all temperatures and magnetic fields. As possible origins two recent models are discussed, the reduction of the quasiparticle density of states due to condensation into superconducting fluctuations and thermally activated transport over an interplane pseudogap.

physics, condensed matter, applied
Magnetoresistance and hysteresis phenomena of (La0.75Bi0.25)0.67Ca0.33MnO3

Z.C. Xia,Y.Y. Wu,G.F. Zhu,A.Z. Hu,X.N. Feng,Y. Wang,C.S. Xiong,S.L. Yuan,C.Q. Tang

DOI: https://doi.org/10.1016/j.jmmm.2007.06.010

IF: 3.097

2008-01-01

Journal of Magnetism and Magnetic Materials

Abstract:The electrical transport and magnetization properties of (La0.75Bi0.25)0.67Ca0.33MnO3 were studied at the temperature and magnetic field ranges from 10 to 300K and 0 to 5T. Compared to pure La0.67Ca0.33MnO3, an unusual magnetoresistance and hysteresis phenomena was observed in (La0.75Bi0.25)0.67Ca0.33MnO3. Especially, an enhanced magnetoresistance effect was obtained in (La0.75Bi0.25)0.67Ca0.33MnO3, meanwhile, in which significant temperature, and magnetic field hysteresis behaviors were also observed. The temperature and magnetic field hysteresis phenomena are mainly from the coexistence of CO and FM domains in the (La0.75Bi0.25)0.67Ca0.33MnO3, in which the CO domains have relaxation and pinning effects on the growth and rotation of FM domains.
Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature

Paolo Perna,Davide Maccariello,Fernando Ajejas,Ruben Guerrero,Laurence Méchin,Stephane Flament,Jacobo Santamaria,Rodolfo Miranda,Julio Camarero

DOI: https://doi.org/10.48550/arXiv.1811.10301

2018-11-26

Materials Science

Abstract:The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. Here we report on the ability to induce a dominant switchable magnetoresistance in La0.7Sr0.3MnO3 epitaxial films, at room temperature (RT). By engineering an extrinsic magnetic anisotropy, we show a large enhancement of anisotropic magnetoresistance (AMR) which leads to, at RT, signal changes much larger than the other contributions such as the colossal magnetoresistance (CMR). The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite based devices for the high-resolution low field magnetic sensors or spintronics.
Current-Induced First-Order Transition in La0.7Ca0.3MnO3

Akilan Palanisami,M. B. Weissman,N. D Mathur

DOI: https://doi.org/10.48550/arXiv.cond-mat/0309474

2003-10-28

Abstract:The paper was withdrawn by the authors, due to an error in interpretation by Weissman. There is a first-order jump, but it's intrinsically a non-equilibrium thermal instability effect.

Materials Science
Single domain to multi-domain transition due to in-plane magnetic anisotropy in phase separated (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ thin films

Hyoungjeen Jeen,Amlan Biswas

DOI: https://doi.org/10.1103/PhysRevB.83.064408

2010-10-27

Abstract:Phase separated perovskite manganites have competing phases with different crystal structures, magnetic and electronic properties. Hence, strain effects play a critical role in determining the magnetic properties of manganite thin films. Here we report the effect of anisotropic stress on the magnetic properties of the phase separated manganite (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$. Thin films of (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ grown under anisotropic in-plane stress on (110) NdGaO$_{3}$ substrates display in-plane mangetic anisotropy and single domain to multidomain transition as a function of temperature. Angle dependent magnetization measurements also show that the magnetization reversal occurs mainly through the nucleation $&$ propagation mechanism. By comparing the results with (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ thin films grown on (001) SrLaGaO$_{4}$ substrates, we have confirmed that the magnetic anisotropy is mainly due to substrate induced anisotropic stress. Our results suggest novel avenues for storing magnetic information in nanoscale magnetic media.

Strongly Correlated Electrons,Materials Science
Giant anisotropic magnetoresistance in bilayered La1.2Sr1.8Mn2O7 single crystals

Wei Ning,Zhe Qu,You-Ming Zou,Lang-Sheng Ling,Lei Zhang,Chuan-Ying Xi,Hai-Feng Du,Run-Wei Li,Yu-Heng Zhang

DOI: https://doi.org/10.1063/1.3593486

IF: 4

2011-05-23

Applied Physics Letters

Abstract:We report an observation of anomalous anisotropic magnetoresistance (AMR) in bilayered La1.2Sr1.8Mn2O7 single crystals. A giant AMR is found to be 80% under a magnetic field of 1 T near the metal-insulator transition temperature, where AMR is defined as AMR=[ρ(H⊥c)−ρ(H∥c)]/ρ(H⊥c)×100%, and ρ(H⊥c) and ρ(H∥c) are the resistivity with the magnetic field perpendicular and parallel to c-axis, respectively. The AMR effect shows strong temperature and magnetic field dependences, and indicates a close interrelation with the anisotropic field-tuned metal-insulator transition.

physics, applied
Anisotropic domains and antiferrodistortive-transition controlled magnetization in epitaxial manganite films on vicinal SrTiO 3 substrates

Binod Paudel,Bruce Zhang,Yogesh Sharma,Kyeong Tae Kang,Heinrich Nakotte,Haiyan Wang,Aiping Chen

DOI: https://doi.org/10.1063/5.0016371

IF: 4

2020-08-24

Applied Physics Letters

Abstract:We studied the microstructural evolution and magnetism of ferroelastic La0.9Sr0.1MnO3 (LSMO) epitaxial thin films grown on SrTiO3 (001) substrates with different miscut angles. The substrate miscut angle plays a critical role in controlling the in-plane magnetic anisotropy. The microscopic origin of such magnetic anisotropy is attributed to the formation of anisotropic stripe domains along the surface step terraces. The magnetization in the LSMO films was found to be selectively modulated by the antiferrodistortive phase transition of the SrTiO3 substrate. This phenomenon has been qualitatively explained by a strain modified Stoner–Wohlfarth model. We conclude that the magnetization modulation by the SrTiO3 phase transition depends on h, the ratio of applied magnetic field to the saturation field. Such modulation is only visible with h < 1. The established domain microstructure–anisotropy–magnetism correlation in manganite films can be applied to a variety of complex oxide thin films on vicinal substrates.

physics, applied
Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward,A.T. Wong,T.Z. Ward

DOI: https://doi.org/10.48550/arXiv.1408.7097

2014-08-29

Strongly Correlated Electrons

Abstract:We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.
Anomaly of Hall effect in magnetoresistive La0.67Ca0.33MnO3

Xiaowen Cao,Jun Fang,Zhihe Wang,Kebin Li

DOI: https://doi.org/10.1063/1.125355

IF: 4

1999-01-01

Applied Physics Letters

Abstract:We have simultaneously measured the longitudinal resistivity and the Hall resistivity for the magnetoresistive La0.67Ca0.33MnO3 thin films as a function of temperature in temperature region of colossal magnetoresistance at several magnetic fields. Two reversions of the Hall sign with reducting temperature have been observed. The temperature at which the reversion of the Hall sign occurs shifts to the higher temperature with the increase of applied magnetic field. It was argued that the coexistence of two types of conduction mechanisms, the itinerant electron and small polaron, competing with each other, might be responsible for the two reversions of the Hall sign. © 1999 American Institute of Physics.
Anomalously Large Anisotropic Magnetoresistance In A Perovskite Manganite

Run-Wei Li,Huabing Wang,Xuewen Wang,X. Z. Yu,Y. Matsui,Zhao-Hua Cheng,Bao-Gen Shen,E. Ward Plummer,Jiandi Zhang

DOI: https://doi.org/10.1073/pnas.0907618106

2009-01-01

Abstract:The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a "colossal'' AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto-and electroniccrystalline couplings.
Insulator–metal transition and magnetoresistance of oxygen deficient La0.35Ca0.65MnOy

Y.G. Zhao,R. Fan,X.P. Zhang,H. Balci,S.B. Ogale,T. Venkatesan,T.K. Mandal,J. Gopalakrishnan

DOI: https://doi.org/10.1016/j.jmmm.2004.06.017

IF: 3.097

2004-01-01

Journal of Magnetism and Magnetic Materials

Abstract:The oxygen content of La0.35Ca0.65MnOy was decreased by annealing the samples at high temperatures in vacuum with graphite powder nearby. Insulator–metal (I–M) transition occurred upon dramatic decrease of oxygen content. Correspondingly the samples showed a large magnetoresistance (MR) and MR=C(M/Ms)2 at 4.5K up to relatively large M/Ms. The results were explained in terms of the variation of Mn3+/Mn4+ ratio and oxygen vacancy ordering induced percolation of the ferromagnetic regions. Spin-dependent hopping model can account for the variation of MR with M/Ms and the variation of C with the decrease of oxygen content.
Insulator–metal Transition and Magnetoresistance of La0.5Ca0.5MnOy Induced by Tuning the Oxygen Content

YG Zhao,W Cai,J Zhao,XP Zhang,R Fan,BS Cao,MH Zhu,T Wu,SB Ogale,SR Shinde,T Venkatesan,QY Tu,TK Mandal,J Gopalakrishnan

DOI: https://doi.org/10.1063/1.1509108

IF: 2.877

2002-01-01

Journal of Applied Physics

Abstract:The oxygen content of La0.5Ca0.5MnOy was tuned by annealing the samples at high temperatures in flowing nitrogen with graphite powder nearby. The reduction of oxygen content has dramatic effect on the electrical transport and magnetic properties. The samples with y=2.983, 2.83, and 2.803 show an insulator-metal transition, and an unusual temperature and magnetic-field dependence of the magnetoresistance. The paramagnetic-ferromagnetic transition also shifts to lower temperatures and the antiferromagnetic transition at lower temperature is suppressed. The results are discussed in terms of the effect of oxygen vacancies on the various properties of La0.5Ca0.5MnOy. (C) 2002 American Institute of Physics.
Anisotropic Magnetoresistance in Charge-Orderedna0.34(h3o)0.15co

C. H. Wang,X. H. Chen,Gang Wu,Tao Wu,Haitao Zhang,Jinming Luo,G. T. Liu,N. L. Wang

DOI: https://doi.org/10.1103/physrevb.74.172507

IF: 3.7

2006-01-01

Physical Review B

Abstract:Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating H in the Co-O plane, while a sixfold symmetry below a certain temperature ($T_\rho$). At $T_\rho$, the symmetry of AMR changes from twofold to fourfold with rotating magnetic field (H) in the plane consisting of the current and c-axis. The variation of AMR symmetry with temperature arises from the subtle changes of the spin structure. These results give a direct evidence for the itinerant electrons directly coupled to the localized spins.
Magnetic anisotropy, magnetization reversal and switching in Ni4Nb2O9single crystals

C Martin,L Hervé,D Sedmidubsky,J P Bolletta,F Damay,A Maignan

DOI: https://doi.org/10.1088/1361-648X/ad2d23

2024-03-07

Abstract:Ni4Nb2O9is an insulating compensated ferrimagnet withTN= 77 K andTcomp= 33 K. We report here the study of the magnetic anisotropy using millimeter-size crystals grown in an image furnace. The magnetization measurements, vs temperature, performed withHaligned along the three main crystallographic axes, show similar Curie-Weiss temperatures (Θp≈ 190 K) and rather similar effective paramagnetic moments (from 3.5μBto 3.6μB). This suggests that the strongest magnetic interaction is the antiferromagnetic one, coupling the ferromagnetic distorted honeycomb layers and zigzag ribbons via face sharing NiO6octahedra. This strong antiferromagnetic coupling is supported by DFT calculations that do not evidence any inter site ferromagnetic interaction, leading to total compensation between magnetic moments of both Ni2+sites. Measurements vs magnetic field belowTNreveal an anisotropic behaviour, with square magnetization loops forHin theabplane, whereas linearM(H) curves without hysteresis are observed forH‖c. This anisotropy betweenabplane andcaxis occurs also in the magnetization reversal (MR), which is observed in theabplane only. Starting fromM(H) virgin curves collected just belowTcomp= 33 K withH‖aorH‖b, the memory-like effect was tested through magnetization switching induced byHorTalternating changes. BelowTcomp, smallerHis needed to switchMsymmetrically forHalongbthan alonga, and, forTswitching (2 K interval, constantH), a largerMchange is obtained alongathan alongb. The comparison with ferrimagnetic oxides which exhibit MR, like spinels or rare earth orthoferrites, shows that Ni4Nb2O9is unique since only one magnetic cation over two sites in octahedral coordination is at play, thus providing a unique platform to studyMswitching but also a challenge for theoretical interpretation.
Crystallization Dynamics and Magnetoresistance of Perovskite-Like Manganate Synthesized by Mechanical Alloying

ZQ Jin,HX Qin,JR Zhang,YW Du

DOI: https://doi.org/10.1088/0953-8984/12/14/323

2000-01-01

Abstract:Nanocrystalline ferromagnetic La0.7Ca0.3MnO3 perovskites with magnetoresistance effect have been successfully prepared by mechanical alloying. Thermal transformation of the amorphous phase, resulting from ball milling, to perovskite structure was studied by differential scanning calorimetry. Following the law of mass action, we discuss the crystallization dynamics of the amorphous phase. The activation energy for crystallization transformation is calculated to be about +1.25 kJ g(-1). The characterization of resistivity rho(T) for La0.7Ca0.3MnO3 perovskites has also been investigated. At low temperature T, rho(T) has a direct-proportion dependence on T-2 With increasing annealing temperature, the slope of the rho-T-2 curve decreases. The temperature dependent magnetoresistance effect at temperature far below the Curie temperature can be well expressed as the equation Delta rho/rho(0) = p(1) - p(2) T-3/2 - p(3)T(5/2).
Anisotropic magnetostructural transition in epitaxial Mn-Ni-Co-Ti Heusler alloy thin film

Yechao Ling,Yong Hu,Xiaodan Chi,Jiawei Chen,Haobo Wang,Ben Niu,Di Wu,Mingxiang Xu,Zhida Han,Jun Du,Qingyu Xu

DOI: https://doi.org/10.1063/5.0086636

IF: 2.877

2022-01-01

Journal of Applied Physics

Abstract:Heusler alloys are distinctive functional materials related to the phase transitions due to the strong magnetic and structural coupling. By the epitaxial strain from the rigid substrates, anisotropic magnetostructural transition (MST) might be observed in different crystalline orientations, leading to novel properties and functions. In this work, 62 nm thick (001)-oriented Mn49.1Ni34.0Co9.6Ti7.3 films are epitaxially grown on (001) MgO substrates. Clear MST is observed accompanied by a broad transition hysteresis from the thermomagnetic (M-T) curves with an out-of-plane (OP) magnetic field, while the transition hysteresis is absent under an in-plane (IP) magnetic field. It is related to the main lattice distortion occurring in OP orientation during the martensitic transformation because of the kinetic arrest of the IP structure by the MgO substrate. The spin glass (SG) phase is observed in IP orientation, which is lacking in OP orientation and the bulk. Clear exchange bias (EB) is observed in both the IP and OP directions. OP EB originates from exchange coupling between the ferromagnetic (FM) and antiferromagnetic phases, while IP EB is partially contributed by the exchange coupling between the SG and FM phases. It is ascribed to the establishment of metastable spin configuration in IP orientation with sufficient surrounding spins, but stable spin configuration in OP orientation due to the limited number of surrounding spins, which has been confirmed by Monte-Carlo simulation results. Our results provide a novel strategy for the modification of the physical properties of Heusler alloys and the design of novel magnetic devices. Published under an exclusive license by AIP Publishing

Anisotropic magnetoresistance involves metal-insulator transition in single crystal La0.77Ca0.23MnO3

Anisotropic Conduction Induced by Current Processing in the La0.8ca0.2mno3 Film

Magnetic Reversal in Sr4Ru3O10 Nanosheets Probed by Anisotropic Magnetoresistance

A phenomenological approach to the anisotropic magnetoresistance and planar Hall effect in tetragonal La(2/3)Ca(1/3)MnO3 thin films

Strain Driven Anisotropic Magnetoresistance in Antiferromagnetic La_0.4Sr_0.6MnO_3

Study of anisotropic magnetoresistance in the thermodynamic fluctuation regime of single crystals of Bi2Sr2CaCu2O8+x

Magnetoresistance and hysteresis phenomena of (La0.75Bi0.25)0.67Ca0.33MnO3

Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature

Current-Induced First-Order Transition in La0.7Ca0.3MnO3

Single domain to multi-domain transition due to in-plane magnetic anisotropy in phase separated (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ thin films

Giant anisotropic magnetoresistance in bilayered La1.2Sr1.8Mn2O7 single crystals

Anisotropic domains and antiferrodistortive-transition controlled magnetization in epitaxial manganite films on vicinal SrTiO 3 substrates

Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

Anomaly of Hall effect in magnetoresistive La0.67Ca0.33MnO3

Anomalously Large Anisotropic Magnetoresistance In A Perovskite Manganite

Insulator–metal transition and magnetoresistance of oxygen deficient La0.35Ca0.65MnOy

Insulator–metal Transition and Magnetoresistance of La0.5Ca0.5MnOy Induced by Tuning the Oxygen Content

Anisotropic Magnetoresistance in Charge-Orderedna0.34(h3o)0.15co

Magnetic anisotropy, magnetization reversal and switching in Ni4Nb2O9single crystals

Crystallization Dynamics and Magnetoresistance of Perovskite-Like Manganate Synthesized by Mechanical Alloying

Anisotropic magnetostructural transition in epitaxial Mn-Ni-Co-Ti Heusler alloy thin film