Abstract:A kinetic Monte Carlo (kMC) simulation with a cluster-multiple labeling technique was carried out to study the dynamic behavior of Si-C clusters during the early stage of epitaxial growth. In the model, a crystal lattice was established to fix the physical location of atoms and interatomic bonding. Events, such as adatoms adsorption, diffusion on the planar surface, and attachment to and detachment from clusters of adatoms were considered in the model. The Si and C atoms were treated individually to achieve more elaborate information for dynamic behavior of the clusters in the crystal surface. Moreover, a cluster multiple labeling technique, also known as the Hoshen - Kopelman algorithm was used to identify Si-C clusters. Then the properties of the clusters were calculated and analyzed by the algorithm. The simulation results showed that the number of Si-C clusters gradually decreases with increasing substrate temperature and decreasing deposition rate, and that the average size of Si-C clusters at high temperatures is much larger than that at low temperatures. Furthermore, the Si:C ratio on the growing surface has a significant effect on the surface morphology. At Si-rich conditions, the cluster density is relatively high, and the cluster shape is not homogeneously distributed. While with the increase of C mole fraction, the cluster density gradually decreases and the cluster shape becomes more uniform. Therefore, a higher concentration of C in deposition flux is beneficial to the early stage of nucleation. These findings are consistent with predictions for the case of the epitaxial growth of SiC.

A Three-Dimensional Atomic Scale Simulations of CVD-SiC Film Growth in {1 1 1}, {1 1 0} and {1 0 0} Family of Planes

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

A Multiscale Model for CVD Growth of Silicon Carbide

The Growth of Si on Sic Complex Substrate by Cvd

Kinetic Monte Carlo Simulation Study of the Early Stages of Epitaxial SiC (0001) Growth

Numerical Simulation of the Growth Characteristics of Laser Chemical Vapor Deposition of Silicon Carbide

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Study on Three-Dimensional Critical Nucleation on a Planar Substrate of 3C-Sic Crystal

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD