Abstract:Aluminum nitride thin film can be applied as a high-temperature material because of its excellent heat resistance and thermal conductivity, and high mechanical strength. In addition, application and application to surface acoustic wave devices using piezoelectric properties are expected, and it is known as a material that can replace ZnO. To obtain excellent crystal orientation, the residual stress behavior inside the thin film should be fully evaluated and identified. In this study, AlN thin films were deposited by the conventional PM sputtering method and the Two-Facing-Target (TFT) PM sputtering method using BLC glass and quartz glass with different thermal expansion coefficients as substrates. In the process of cooling the fabricated thin film, the effect of the difference in the coefficient of thermal expansion with the substrate on the residual stress of the thin film and the effect of the substrate temperature on the properties of the thin-film structure and the residual stress when the thin film was deposited were investigated. The AlN thin film deposited on the glass substrate by the conventional PM sputtering method showed a crystal structure in which the c -axis was preferentially oriented in the normal direction of the substrate surface, the same as the AlN thin film produced by the two-facing-target PM sputtering method. The AlN thin film deposited on the glass substrate had a crystal structure in which the c -axis was preferentially oriented in the normal direction to the substrate, and the c -axis orientation showed excellent c -axis orientation when the substrate temperature was higher than 523 K. In the case of the quartz glass substrate, the increase of the tensile residual stress was evident as the substrate temperature increased, and the effect of the thermal residual stress was confirmed.

Simulation of Thermal Stress in AlN Thin Film

Analysis of the Thermal Stress in Infrared Films

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Effect of Stress on Thermal Properties of AlGaN Nanofilms

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods

Suitable thickness of the adhesive layer facilitates the release of thermal stresses in AlN crystals

Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy

Analysis of Residual Stress of Gradient TiAlN Films Prepared by Arc Ion Plating

Residual Stress of AlN Films RF Sputter Deposited on Si(111) Substrate

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Minimizing residual stress of aluminum nitride (AlN) thin films using multi-step deposition of DC pulsed sputtering

Minimizing film residual stress with in situ OES big data using principal component analysis of deposited AlN films by pulsed DC reactive sputtering

Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy

Influence of Residual Stress on Mechanical Properties of TiAlN Thin Films

Theoretical analysis and numerical simulation on the fracture of GaN epitaxial films

Stress Analysis of Thin Film Thermocouple Sensor Based on Finite Element Simulation