Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Study of the Synthesis of SiO2–TiO2–GeO2 Gel Glass for Hollow Waveguide Application in CO2 Laser Delivery

Study of Silicon-on-glass Waveguides

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

The preparation of silica-based SiO2-ZrO2 films as waveguides by sol-gel process

Fabrication of silicon-on-glass waveguides

Waveguide Properties Of Tio2/Ormosil Composite Thin Films Prepared By Sol-Gel Processing On Iii-V Compound Semiconductor Substrates

Design and Analysis of 2-Μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer

Low-loss Ge-As-Se-Te Fiber for High-Intensity CO2 Laser Delivery

Sol-gel Preparation of a Silica Antireflective Coating with Enhanced Hydrophobicity and Optical Stability in Vacuum

Oxygen-implanted optical planar waveguides in Er3+/Yb3+-codoped silicate glasses for integrated laser generation

Fabrication of Hollow Optical Fiber with A Vitreous Film for Co2 Laser Light Delivery

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Attenuated Total Reflection Geo2 Hollow Waveguide For 9.6-11.7 Mu M Infrared Light Transmission

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Evaporation characteristics of Er$^{3+}$ doped silica fiber and its application in the preparation of whispering gallery mode lasers

Direct Writing of Buried Waveguides in Hybrid Organic-Inorganic Sol-Gel by Femtosecond Laser Pulses

Low-Temperature, Low-Cost Growth of Robust Atr Geo2 Hollow Fibers Based on Copper Capillary Tubes for Transmission of Co2 Laser Light

Optical properties of the O3+-ion implanted and femtosecond-laser ablated ridge waveguide in the Er3+-doped germanate glass

Laser Annealing of SiO2 Film Deposited by ICPECVD for Fabrication of Silicon Based Low Loss Waveguide

Direct Writing of Channel Optical Waveguides in Er 3+ -Doped Aluminosilicate Glass by Low Repetition Rate Femtosecond Laser