Fluorescence properties of rhodamine B-doped SiO2–TiO2 films prepared by sol–gel process

Xiaopeng Hao,Xianping Fan,Zhiyu Wang,Minquan Wang
DOI: https://doi.org/10.1016/S0167-577X(01)00298-1
IF: 3
2001-01-01
Materials Letters
Abstract:The sol–gel coating processes of the rhodamine B-doped SiO2–TiO2 system, and the influence of the compositions of the SiO2–TiO2 system on the fluorescence properties of rhodamine B-doped films have been investigated. The main absorption band of rhodamine B-doped films can be attributed to the rhodamine B monomers, and only a very weak absorption band of the dimer can be observed. The relationship between absorbance and film thickness was linear for the rhodamine B-doped SiO2–TiO2 films. The single emission band in fluorescence spectrum of rhodamine B-doped films can be attributed to transitions from the lowest-lying level of the first excited electronic state to the electronic ground state of rhodamine B monomers. The fluorescence intensities of rhodamine B-doped SiO2–TiO2 films obviously increased with the increase of film thickness. The relationship between fluorescence intensity and film thickness was also linear for the rhodamine B-doped SiO2–TiO2 films. The compositions have significant influence on the fluorescence intensities of the rhodamine B-doped SiO2–TiO2 films. The fluorescence intensities decreased obviously with increase of TiO2 when the content of TiO2 was more than 30%.
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