INFLUENCE OF SILICON DOPING AND SILICON-VANADIUM CO-DOPING ON PHOTOCATALYST PROPERTY OF TiO2 THIN FILMS

LI Hong,ZHAO Gaoling,LIU Qinhua,WENG Wenjian,DU Piyi,SHEN Ge,HAN Gaorong
DOI: https://doi.org/10.3321/j.issn:0454-5648.2005.06.025
2005-01-01
Abstract:Silicon doped TiO_2 thin films with a thickness of about 120 nm were prepared on glass substrate by the solgel method. The molar ratio of butyl titanate, ethylor thosilicate, ethanol, water and nitric acid, that are used as raw materials in the solgel process, is 1∶y∶25∶1∶0.2. Scanning electron microscopy and X-ray diffraction were used to investigate the microstructure and crystallization behavior of the thin film. The photocatalysis of TiO_2 thin film obtained was investigated in a methyl orange aqua system. The results show that when the doping amount y is equal to or less than 0.3 the photocatalysis is enhanced with the increase of doping amount. However when y value is greater than 0.3 the photocatalysis decreases. TiO_2 thin films codoped with silica-vanadium were prepared by the same method as silicon-doped TiO_2 thin films. It is found that co-(doping) can further enhance the photocatalysis properties of TiO_2 thin films.
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