Enhanced Current Efficiency in Organic Light-Emitting Devices Using 4,4′-N,n′-dicarbazole-biphenyl As Hole-Buffer Layer

Huishan Yang,Wenfa Me,Yi Zhao,Jingying Hou,Shiyong Liu
DOI: https://doi.org/10.1016/j.sse.2006.11.007
IF: 1.916
2007-01-01
Solid-State Electronics
Abstract:Organic light-emitting devices with a hole-buffer layer (HBL) 4,4′-N,N′-dicarbazole-biphenyl (CBP) inserted between ITO anode and hole transporting layer were fabricated. The present of the CBP can balance the hole and electron injections and reduce the hole-leakage to the cathode resulting in the enhancement of the current efficiency. The highest current efficiency of the device with optimum CBP thickness of 4nm was 5.66cd/A at 8V that is nearly 1.5 times than that of the device without the HBL.
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