Formation of an Intermetallic Phase by Crystallization in the Cr–Si–Ni–Al Amorphous Film

XP Dong,HS Wu

DOI: https://doi.org/10.1016/s0925-8388(03)00178-6

IF: 6.2

2003-01-01

Journal of Alloys and Compounds

Abstract:The microstructure of annealed Cr–Si–Ni–Al films was investigated by transmission electron microscopy (TEM). Sputtered amorphous Cr–Si–Ni–Al films crystallized into two phases: the intermetallic phase Cr(Al,Si)2 and the pure silicon phase. The formation of the crystallization phases resulted in a significant increase in both the electrical resistivity and the temperature coefficient of resistance (TCR) for the annealed Cr–Si–Ni–Al films. Particularly, the intermetallic Cr(Al,Si)2 particles, which were embedded in the amorphous matrix, were responsible for achieving a zero TCR. In addition, the growth rate of the crystallized phases at the initial stage of reaction was faster than that at the final stage, resulting from the combined redistribution of Cr, Si, Al and Ni elements between the initial crystallization phases and the parent amorphous phase.